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Conference Paper: Impact of statistical variability and 3D electrostatics on post-cycling anomalous charge loss in nanoscale Flash memories

TitleImpact of statistical variability and 3D electrostatics on post-cycling anomalous charge loss in nanoscale Flash memories
Authors
KeywordsFlash memories
SILC
semiconductor device modeling
retention
electron emission statistics (EES)
variability
Issue Date2013
Citation
IEEE International Reliability Physics Symposium Proceedings, 2013, p. 3B.4.1-3B.4.6 How to Cite?
AbstractThis paper presents a detailed simulation investigation of the impact of statistical variability and 3D electrostatics on SILC distribution in nanoscale Flash memories. Considering a 1-TAT model we study the SILC statistics under stationary and dynamic retention conditions. Our results show that SILC is dispersed over the channel area due to non-uniform electrostatics in nanoscale devices. Further, the floating gate poly-silicon granularity plays a major role in determining the SILC distribution, depending on the gate polarity. Dynamic charge loss simulations highlight that the impact of 3D electrostatics is dominant over the cell-to-cell variability. Finally, we analyze the electron emission statistics on a single cell, showing that this gives rise to a lower SILC dispersion than an analytical Poisson charge loss statistics. Our results are fundamental to determine the degree of accuracy of 1D models for the post-cycling charge loss statistics simulation in nanoscale Flash memories. © 2013 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/221346
ISSN

 

DC FieldValueLanguage
dc.contributor.authorAmoroso, Salvatore Maria-
dc.contributor.authorGerrer, Louis-
dc.contributor.authorAdamu-Lema, Fikru-
dc.contributor.authorMarkov, Stanislav-
dc.contributor.authorAsenov, Asen-
dc.date.accessioned2015-11-18T06:09:04Z-
dc.date.available2015-11-18T06:09:04Z-
dc.date.issued2013-
dc.identifier.citationIEEE International Reliability Physics Symposium Proceedings, 2013, p. 3B.4.1-3B.4.6-
dc.identifier.issn1541-7026-
dc.identifier.urihttp://hdl.handle.net/10722/221346-
dc.description.abstractThis paper presents a detailed simulation investigation of the impact of statistical variability and 3D electrostatics on SILC distribution in nanoscale Flash memories. Considering a 1-TAT model we study the SILC statistics under stationary and dynamic retention conditions. Our results show that SILC is dispersed over the channel area due to non-uniform electrostatics in nanoscale devices. Further, the floating gate poly-silicon granularity plays a major role in determining the SILC distribution, depending on the gate polarity. Dynamic charge loss simulations highlight that the impact of 3D electrostatics is dominant over the cell-to-cell variability. Finally, we analyze the electron emission statistics on a single cell, showing that this gives rise to a lower SILC dispersion than an analytical Poisson charge loss statistics. Our results are fundamental to determine the degree of accuracy of 1D models for the post-cycling charge loss statistics simulation in nanoscale Flash memories. © 2013 IEEE.-
dc.languageeng-
dc.relation.ispartofIEEE International Reliability Physics Symposium Proceedings-
dc.subjectFlash memories-
dc.subjectSILC-
dc.subjectsemiconductor device modeling-
dc.subjectretention-
dc.subjectelectron emission statistics (EES)-
dc.subjectvariability-
dc.titleImpact of statistical variability and 3D electrostatics on post-cycling anomalous charge loss in nanoscale Flash memories-
dc.typeConference_Paper-
dc.description.natureLink_to_subscribed_fulltext-
dc.identifier.doi10.1109/IRPS.2013.6531980-
dc.identifier.scopuseid_2-s2.0-84880969327-
dc.identifier.spage3B.4.1-
dc.identifier.epage3B.4.6-

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