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- Publisher Website: 10.1109/IRPS.2013.6531980
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Conference Paper: Impact of statistical variability and 3D electrostatics on post-cycling anomalous charge loss in nanoscale Flash memories
Title | Impact of statistical variability and 3D electrostatics on post-cycling anomalous charge loss in nanoscale Flash memories |
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Authors | |
Keywords | Flash memories SILC semiconductor device modeling retention electron emission statistics (EES) variability |
Issue Date | 2013 |
Citation | IEEE International Reliability Physics Symposium Proceedings, 2013, p. 3B.4.1-3B.4.6 How to Cite? |
Abstract | This paper presents a detailed simulation investigation of the impact of statistical variability and 3D electrostatics on SILC distribution in nanoscale Flash memories. Considering a 1-TAT model we study the SILC statistics under stationary and dynamic retention conditions. Our results show that SILC is dispersed over the channel area due to non-uniform electrostatics in nanoscale devices. Further, the floating gate poly-silicon granularity plays a major role in determining the SILC distribution, depending on the gate polarity. Dynamic charge loss simulations highlight that the impact of 3D electrostatics is dominant over the cell-to-cell variability. Finally, we analyze the electron emission statistics on a single cell, showing that this gives rise to a lower SILC dispersion than an analytical Poisson charge loss statistics. Our results are fundamental to determine the degree of accuracy of 1D models for the post-cycling charge loss statistics simulation in nanoscale Flash memories. © 2013 IEEE. |
Persistent Identifier | http://hdl.handle.net/10722/221346 |
ISSN | 2020 SCImago Journal Rankings: 0.380 |
DC Field | Value | Language |
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dc.contributor.author | Amoroso, Salvatore Maria | - |
dc.contributor.author | Gerrer, Louis | - |
dc.contributor.author | Adamu-Lema, Fikru | - |
dc.contributor.author | Markov, Stanislav | - |
dc.contributor.author | Asenov, Asen | - |
dc.date.accessioned | 2015-11-18T06:09:04Z | - |
dc.date.available | 2015-11-18T06:09:04Z | - |
dc.date.issued | 2013 | - |
dc.identifier.citation | IEEE International Reliability Physics Symposium Proceedings, 2013, p. 3B.4.1-3B.4.6 | - |
dc.identifier.issn | 1541-7026 | - |
dc.identifier.uri | http://hdl.handle.net/10722/221346 | - |
dc.description.abstract | This paper presents a detailed simulation investigation of the impact of statistical variability and 3D electrostatics on SILC distribution in nanoscale Flash memories. Considering a 1-TAT model we study the SILC statistics under stationary and dynamic retention conditions. Our results show that SILC is dispersed over the channel area due to non-uniform electrostatics in nanoscale devices. Further, the floating gate poly-silicon granularity plays a major role in determining the SILC distribution, depending on the gate polarity. Dynamic charge loss simulations highlight that the impact of 3D electrostatics is dominant over the cell-to-cell variability. Finally, we analyze the electron emission statistics on a single cell, showing that this gives rise to a lower SILC dispersion than an analytical Poisson charge loss statistics. Our results are fundamental to determine the degree of accuracy of 1D models for the post-cycling charge loss statistics simulation in nanoscale Flash memories. © 2013 IEEE. | - |
dc.language | eng | - |
dc.relation.ispartof | IEEE International Reliability Physics Symposium Proceedings | - |
dc.subject | Flash memories | - |
dc.subject | SILC | - |
dc.subject | semiconductor device modeling | - |
dc.subject | retention | - |
dc.subject | electron emission statistics (EES) | - |
dc.subject | variability | - |
dc.title | Impact of statistical variability and 3D electrostatics on post-cycling anomalous charge loss in nanoscale Flash memories | - |
dc.type | Conference_Paper | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/IRPS.2013.6531980 | - |
dc.identifier.scopus | eid_2-s2.0-84880969327 | - |
dc.identifier.spage | 3B.4.1 | - |
dc.identifier.epage | 3B.4.6 | - |
dc.identifier.issnl | 1541-7026 | - |