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Conference Paper: Analysis of silicon dioxide interface transition region in MOS structures

TitleAnalysis of silicon dioxide interface transition region in MOS structures
Authors
Issue Date2007
Citation
2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007, 2007, p. 149-152 How to Cite?
AbstractWe study the Si(100) inversion layer quantisation, capacitance and tunnelling characteristics in the case of a gradual band gap transition at the Si/SiO2 interface. A linear band gap transition of 0.5 nm at the SiO2 side results in nearly 20% redistribution of carriers from the 2-fold to the 4-fold degenerate valley, due to the greater wave-function penetration and sub-band level lowering for the 4-fold valley. The gate capacitance is enhanced by up to 12% for a 1.0 nm nominal oxide thickness, and the direct tunnelling current density increases by an order of magnitude.
Persistent Identifierhttp://hdl.handle.net/10722/221313

 

DC FieldValueLanguage
dc.contributor.authorMarkov, S.-
dc.contributor.authorBarin, N.-
dc.contributor.authorFiegna, C.-
dc.contributor.authorRoy, S.-
dc.contributor.authorSangiorgi, E.-
dc.contributor.authorAsenov, A.-
dc.date.accessioned2015-11-18T06:08:58Z-
dc.date.available2015-11-18T06:08:58Z-
dc.date.issued2007-
dc.identifier.citation2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007, 2007, p. 149-152-
dc.identifier.urihttp://hdl.handle.net/10722/221313-
dc.description.abstractWe study the Si(100) inversion layer quantisation, capacitance and tunnelling characteristics in the case of a gradual band gap transition at the Si/SiO2 interface. A linear band gap transition of 0.5 nm at the SiO2 side results in nearly 20% redistribution of carriers from the 2-fold to the 4-fold degenerate valley, due to the greater wave-function penetration and sub-band level lowering for the 4-fold valley. The gate capacitance is enhanced by up to 12% for a 1.0 nm nominal oxide thickness, and the direct tunnelling current density increases by an order of magnitude.-
dc.languageeng-
dc.relation.ispartof2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007-
dc.titleAnalysis of silicon dioxide interface transition region in MOS structures-
dc.typeConference_Paper-
dc.description.natureLink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-62449153881-
dc.identifier.spage149-
dc.identifier.epage152-

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