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Article: Permittivity of oxidized ultra-thin silicon films from atomistic simulations

TitlePermittivity of oxidized ultra-thin silicon films from atomistic simulations
Authors
Issue Date2015
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55
Citation
IEEE Electron Device Letters, 2015, v. 36 n. 10, p. 1076-1078 How to Cite?
AbstractWe establish the dependence of the permittivity of oxidized ultra-thin silicon films on the film thickness by means of atomistic simulations within the density-functional-based tight-binding theory (DFTB). This is of utmost importance for modeling ultra- and extremely-thin silicon-on-insulator MOSFETs, and for evaluating their scaling potential. We demonstrate that electronic contribution to the dielectric response naturally emerges from the DFTB Hamiltonian when coupled to Poisson equation solved in vacuum, without phenomenological parameters, and obtain good agreement with available experimental data. Comparison to calculations of H-passivated Si films reveals much weaker dependence of permittivity on film thickness for the SiO2-passivated Si, with less than 18% reduction in the case of 0.9 nm silicon-on-insulator.
Persistent Identifierhttp://hdl.handle.net/10722/215166
ISSN
2015 Impact Factor: 2.528
2015 SCImago Journal Rankings: 1.791

 

DC FieldValueLanguage
dc.contributor.authorMarkov, SN-
dc.contributor.authorPenazzi, G-
dc.contributor.authorKwok, YH-
dc.contributor.authorAradi, B-
dc.contributor.authorPecchia, A-
dc.contributor.authorFrauenheim, T-
dc.contributor.authorChen, G-
dc.date.accessioned2015-08-21T13:16:42Z-
dc.date.available2015-08-21T13:16:42Z-
dc.date.issued2015-
dc.identifier.citationIEEE Electron Device Letters, 2015, v. 36 n. 10, p. 1076-1078-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10722/215166-
dc.description.abstractWe establish the dependence of the permittivity of oxidized ultra-thin silicon films on the film thickness by means of atomistic simulations within the density-functional-based tight-binding theory (DFTB). This is of utmost importance for modeling ultra- and extremely-thin silicon-on-insulator MOSFETs, and for evaluating their scaling potential. We demonstrate that electronic contribution to the dielectric response naturally emerges from the DFTB Hamiltonian when coupled to Poisson equation solved in vacuum, without phenomenological parameters, and obtain good agreement with available experimental data. Comparison to calculations of H-passivated Si films reveals much weaker dependence of permittivity on film thickness for the SiO2-passivated Si, with less than 18% reduction in the case of 0.9 nm silicon-on-insulator.-
dc.languageeng-
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55-
dc.relation.ispartofIEEE Electron Device Letters-
dc.rightsIEEE Electron Device Letters. Copyright © IEEE.-
dc.rights©2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titlePermittivity of oxidized ultra-thin silicon films from atomistic simulations-
dc.typeArticle-
dc.identifier.emailMarkov, SN: figaro@hku.hk-
dc.identifier.emailChen, G: ghchen@hku.hk-
dc.identifier.authorityMarkov, SN=rp02107-
dc.identifier.authorityChen, G=rp00671-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/LED.2015.2465850-
dc.identifier.hkuros248452-
dc.identifier.volume36-
dc.identifier.issue10-
dc.identifier.spage1076-
dc.identifier.epage1078-
dc.publisher.placeUnited States-

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