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Conference Paper: 3D dynamic RTN simulation of a 25nm MOSFET: The importance of variability in reliability evaluation of decananometer devices

Title3D dynamic RTN simulation of a 25nm MOSFET: The importance of variability in reliability evaluation of decananometer devices
Authors
KeywordsRandom dopants
device simulation
charge trapping
statistical variability
RTN
reliability
Issue Date2012
Citation
2012 15th International Workshop on Computational Electronics, IWCE 2012, 2012 How to Cite?
AbstractIn this work we present a 3D dynamic simulation analysis for the reliability evaluation of a decananometer MOSFET device. We have focused our attention on the Random Telegraph Noise (RTN) phenomenon, showing that the statistical variability induced by the discrete nature of matter and charge has a fundamental impact on the reliability performance of nanoscale devices, in both transient and steady-state operating regimes. © 2012 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/221320

 

DC FieldValueLanguage
dc.contributor.authorAmoroso, Salvatore Maria-
dc.contributor.authorAdamu-Lema, Fikru-
dc.contributor.authorMarkov, Stanislav-
dc.contributor.authorGerrer, Louis-
dc.contributor.authorAsenov, Asen-
dc.date.accessioned2015-11-18T06:08:59Z-
dc.date.available2015-11-18T06:08:59Z-
dc.date.issued2012-
dc.identifier.citation2012 15th International Workshop on Computational Electronics, IWCE 2012, 2012-
dc.identifier.urihttp://hdl.handle.net/10722/221320-
dc.description.abstractIn this work we present a 3D dynamic simulation analysis for the reliability evaluation of a decananometer MOSFET device. We have focused our attention on the Random Telegraph Noise (RTN) phenomenon, showing that the statistical variability induced by the discrete nature of matter and charge has a fundamental impact on the reliability performance of nanoscale devices, in both transient and steady-state operating regimes. © 2012 IEEE.-
dc.languageeng-
dc.relation.ispartof2012 15th International Workshop on Computational Electronics, IWCE 2012-
dc.subjectRandom dopants-
dc.subjectdevice simulation-
dc.subjectcharge trapping-
dc.subjectstatistical variability-
dc.subjectRTN-
dc.subjectreliability-
dc.title3D dynamic RTN simulation of a 25nm MOSFET: The importance of variability in reliability evaluation of decananometer devices-
dc.typeConference_Paper-
dc.description.natureLink_to_subscribed_fulltext-
dc.identifier.doi10.1109/IWCE.2012.6242823-
dc.identifier.scopuseid_2-s2.0-84866539072-

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