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- Publisher Website: 10.1109/IWCE.2012.6242823
- Scopus: eid_2-s2.0-84866539072
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Conference Paper: 3D dynamic RTN simulation of a 25nm MOSFET: The importance of variability in reliability evaluation of decananometer devices
Title | 3D dynamic RTN simulation of a 25nm MOSFET: The importance of variability in reliability evaluation of decananometer devices |
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Authors | |
Keywords | Random dopants device simulation charge trapping statistical variability RTN reliability |
Issue Date | 2012 |
Citation | 2012 15th International Workshop on Computational Electronics, IWCE 2012, 2012 How to Cite? |
Abstract | In this work we present a 3D dynamic simulation analysis for the reliability evaluation of a decananometer MOSFET device. We have focused our attention on the Random Telegraph Noise (RTN) phenomenon, showing that the statistical variability induced by the discrete nature of matter and charge has a fundamental impact on the reliability performance of nanoscale devices, in both transient and steady-state operating regimes. © 2012 IEEE. |
Persistent Identifier | http://hdl.handle.net/10722/221320 |
DC Field | Value | Language |
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dc.contributor.author | Amoroso, Salvatore Maria | - |
dc.contributor.author | Adamu-Lema, Fikru | - |
dc.contributor.author | Markov, Stanislav | - |
dc.contributor.author | Gerrer, Louis | - |
dc.contributor.author | Asenov, Asen | - |
dc.date.accessioned | 2015-11-18T06:08:59Z | - |
dc.date.available | 2015-11-18T06:08:59Z | - |
dc.date.issued | 2012 | - |
dc.identifier.citation | 2012 15th International Workshop on Computational Electronics, IWCE 2012, 2012 | - |
dc.identifier.uri | http://hdl.handle.net/10722/221320 | - |
dc.description.abstract | In this work we present a 3D dynamic simulation analysis for the reliability evaluation of a decananometer MOSFET device. We have focused our attention on the Random Telegraph Noise (RTN) phenomenon, showing that the statistical variability induced by the discrete nature of matter and charge has a fundamental impact on the reliability performance of nanoscale devices, in both transient and steady-state operating regimes. © 2012 IEEE. | - |
dc.language | eng | - |
dc.relation.ispartof | 2012 15th International Workshop on Computational Electronics, IWCE 2012 | - |
dc.subject | Random dopants | - |
dc.subject | device simulation | - |
dc.subject | charge trapping | - |
dc.subject | statistical variability | - |
dc.subject | RTN | - |
dc.subject | reliability | - |
dc.title | 3D dynamic RTN simulation of a 25nm MOSFET: The importance of variability in reliability evaluation of decananometer devices | - |
dc.type | Conference_Paper | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/IWCE.2012.6242823 | - |
dc.identifier.scopus | eid_2-s2.0-84866539072 | - |