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Conference Paper: Si-SiO 2 interface band-gap transition - Effects on MOS inversion layer

TitleSi-SiO 2 interface band-gap transition - Effects on MOS inversion layer
Authors
Issue Date2008
Citation
Physica Status Solidi (A) Applications and Materials Science, 2008, v. 205, n. 6, p. 1290-1295 How to Cite?
AbstractDensity functional theory simulation results of the atomic structure at the Si-SiO 2 interface implies a non-abrupt transition of the band-gap within the oxide. The depth of the transition, 2-6 Å, is comparable to the approximately 1 nm oxide thickness in nano-CMOS devices, and is expected to affect their characteristics. Using hierarchical simulation approach, we combine for the first time ab-initio density functional theory simulations of the interface, with self-consistent Poisson-Schrödinger one-dimensional device simulations, and estimate the impact of interface band-gap transition on the inversion layer quantisation, capacitance, and tunnelling characteristics of a metal-oxide-semiconductor structure. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA.
Persistent Identifierhttp://hdl.handle.net/10722/221312
ISSN
2015 Impact Factor: 1.648
2015 SCImago Journal Rankings: 0.712

 

DC FieldValueLanguage
dc.contributor.authorMarkov, Stanislav-
dc.contributor.authorSushko, Peter V.-
dc.contributor.authorRoy, Scott-
dc.contributor.authorFiegna, Claudio-
dc.contributor.authorSangiorgi, Enrico-
dc.contributor.authorShluger, Alexander L.-
dc.contributor.authorAsenov, Asen-
dc.date.accessioned2015-11-18T06:08:58Z-
dc.date.available2015-11-18T06:08:58Z-
dc.date.issued2008-
dc.identifier.citationPhysica Status Solidi (A) Applications and Materials Science, 2008, v. 205, n. 6, p. 1290-1295-
dc.identifier.issn1862-6300-
dc.identifier.urihttp://hdl.handle.net/10722/221312-
dc.description.abstractDensity functional theory simulation results of the atomic structure at the Si-SiO 2 interface implies a non-abrupt transition of the band-gap within the oxide. The depth of the transition, 2-6 Å, is comparable to the approximately 1 nm oxide thickness in nano-CMOS devices, and is expected to affect their characteristics. Using hierarchical simulation approach, we combine for the first time ab-initio density functional theory simulations of the interface, with self-consistent Poisson-Schrödinger one-dimensional device simulations, and estimate the impact of interface band-gap transition on the inversion layer quantisation, capacitance, and tunnelling characteristics of a metal-oxide-semiconductor structure. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA.-
dc.languageeng-
dc.relation.ispartofPhysica Status Solidi (A) Applications and Materials Science-
dc.titleSi-SiO 2 interface band-gap transition - Effects on MOS inversion layer-
dc.typeConference_Paper-
dc.description.natureLink_to_subscribed_fulltext-
dc.identifier.doi10.1002/pssa.200778154-
dc.identifier.scopuseid_2-s2.0-54549110056-
dc.identifier.volume205-
dc.identifier.issue6-
dc.identifier.spage1290-
dc.identifier.epage1295-
dc.identifier.eissn1862-6319-

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