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- Publisher Website: 10.1002/pssa.200778154
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Conference Paper: Si-SiO 2 interface band-gap transition - Effects on MOS inversion layer
Title | Si-SiO 2 interface band-gap transition - Effects on MOS inversion layer |
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Authors | |
Issue Date | 2008 |
Citation | Physica Status Solidi (A) Applications and Materials Science, 2008, v. 205, n. 6, p. 1290-1295 How to Cite? |
Abstract | Density functional theory simulation results of the atomic structure at the Si-SiO 2 interface implies a non-abrupt transition of the band-gap within the oxide. The depth of the transition, 2-6 Å, is comparable to the approximately 1 nm oxide thickness in nano-CMOS devices, and is expected to affect their characteristics. Using hierarchical simulation approach, we combine for the first time ab-initio density functional theory simulations of the interface, with self-consistent Poisson-Schrödinger one-dimensional device simulations, and estimate the impact of interface band-gap transition on the inversion layer quantisation, capacitance, and tunnelling characteristics of a metal-oxide-semiconductor structure. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA. |
Persistent Identifier | http://hdl.handle.net/10722/221312 |
ISSN | 2021 Impact Factor: 2.170 2020 SCImago Journal Rankings: 0.532 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Markov, Stanislav | - |
dc.contributor.author | Sushko, Peter V. | - |
dc.contributor.author | Roy, Scott | - |
dc.contributor.author | Fiegna, Claudio | - |
dc.contributor.author | Sangiorgi, Enrico | - |
dc.contributor.author | Shluger, Alexander L. | - |
dc.contributor.author | Asenov, Asen | - |
dc.date.accessioned | 2015-11-18T06:08:58Z | - |
dc.date.available | 2015-11-18T06:08:58Z | - |
dc.date.issued | 2008 | - |
dc.identifier.citation | Physica Status Solidi (A) Applications and Materials Science, 2008, v. 205, n. 6, p. 1290-1295 | - |
dc.identifier.issn | 1862-6300 | - |
dc.identifier.uri | http://hdl.handle.net/10722/221312 | - |
dc.description.abstract | Density functional theory simulation results of the atomic structure at the Si-SiO 2 interface implies a non-abrupt transition of the band-gap within the oxide. The depth of the transition, 2-6 Å, is comparable to the approximately 1 nm oxide thickness in nano-CMOS devices, and is expected to affect their characteristics. Using hierarchical simulation approach, we combine for the first time ab-initio density functional theory simulations of the interface, with self-consistent Poisson-Schrödinger one-dimensional device simulations, and estimate the impact of interface band-gap transition on the inversion layer quantisation, capacitance, and tunnelling characteristics of a metal-oxide-semiconductor structure. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA. | - |
dc.language | eng | - |
dc.relation.ispartof | Physica Status Solidi (A) Applications and Materials Science | - |
dc.title | Si-SiO 2 interface band-gap transition - Effects on MOS inversion layer | - |
dc.type | Conference_Paper | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1002/pssa.200778154 | - |
dc.identifier.scopus | eid_2-s2.0-54549110056 | - |
dc.identifier.volume | 205 | - |
dc.identifier.issue | 6 | - |
dc.identifier.spage | 1290 | - |
dc.identifier.epage | 1295 | - |
dc.identifier.eissn | 1862-6319 | - |
dc.identifier.isi | WOS:000257185300008 | - |
dc.identifier.issnl | 1862-6300 | - |