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- Publisher Website: 10.1109/TED.2010.2075932
- Scopus: eid_2-s2.0-78049283302
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Article: Direct tunnelling gate leakage variability in Nano-CMOS transistors
Title | Direct tunnelling gate leakage variability in Nano-CMOS transistors |
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Authors | |
Keywords | Device variability gate leakage direct tunnelling random dopant fluctuations (RDFs) oxide thickness fluctuations (OTFs) |
Issue Date | 2010 |
Citation | IEEE Transactions on Electron Devices, 2010, v. 57, n. 11, p. 3106-3114 How to Cite? |
Abstract | A comprehensive simulation methodology for the systematic study of gate leakage variability in realistic nanoscale bulk CMOS transistors, on a statistical scale, is presented for the first time. This is based on the Glasgow atomistic 3-D driftdiffusion device simulator with density-gradient quantum corrections, which is capable of modeling various sources of stochastic variability, including random dopant fluctuations (RDFs) and oxide thickness fluctuations (OTFs). The capabilities of the simulator are extended to model direct tunnelling of electrons through the gate dielectric by means of an improved WentzelKramerBrillouin approximation with one model parameter only. The methodology is applied for the detailed study of the gate leakage variability arising from RDFs and OTFs in a 25-nm square-gate n-channel metaloxidesemiconductor field-effect transistor with conventional architecture. The origins of gate leakage variability and gate current increase due to RDFs and OTFs individually, and in combination, are analyzed for bias conditions that are relevant to static power dissipation in digital CMOS circuits. © 2010 IEEE. |
Persistent Identifier | http://hdl.handle.net/10722/221314 |
ISSN | 2023 Impact Factor: 2.9 2023 SCImago Journal Rankings: 0.785 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Markov, Stanislav | - |
dc.contributor.author | Roy, Scott | - |
dc.contributor.author | Asenov, Asen | - |
dc.date.accessioned | 2015-11-18T06:08:58Z | - |
dc.date.available | 2015-11-18T06:08:58Z | - |
dc.date.issued | 2010 | - |
dc.identifier.citation | IEEE Transactions on Electron Devices, 2010, v. 57, n. 11, p. 3106-3114 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10722/221314 | - |
dc.description.abstract | A comprehensive simulation methodology for the systematic study of gate leakage variability in realistic nanoscale bulk CMOS transistors, on a statistical scale, is presented for the first time. This is based on the Glasgow atomistic 3-D driftdiffusion device simulator with density-gradient quantum corrections, which is capable of modeling various sources of stochastic variability, including random dopant fluctuations (RDFs) and oxide thickness fluctuations (OTFs). The capabilities of the simulator are extended to model direct tunnelling of electrons through the gate dielectric by means of an improved WentzelKramerBrillouin approximation with one model parameter only. The methodology is applied for the detailed study of the gate leakage variability arising from RDFs and OTFs in a 25-nm square-gate n-channel metaloxidesemiconductor field-effect transistor with conventional architecture. The origins of gate leakage variability and gate current increase due to RDFs and OTFs individually, and in combination, are analyzed for bias conditions that are relevant to static power dissipation in digital CMOS circuits. © 2010 IEEE. | - |
dc.language | eng | - |
dc.relation.ispartof | IEEE Transactions on Electron Devices | - |
dc.subject | Device variability | - |
dc.subject | gate leakage | - |
dc.subject | direct tunnelling | - |
dc.subject | random dopant fluctuations (RDFs) | - |
dc.subject | oxide thickness fluctuations (OTFs) | - |
dc.title | Direct tunnelling gate leakage variability in Nano-CMOS transistors | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/TED.2010.2075932 | - |
dc.identifier.scopus | eid_2-s2.0-78049283302 | - |
dc.identifier.volume | 57 | - |
dc.identifier.issue | 11 | - |
dc.identifier.spage | 3106 | - |
dc.identifier.epage | 3114 | - |
dc.identifier.isi | WOS:000283446600041 | - |
dc.identifier.issnl | 0018-9383 | - |