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Article: Back-gate bias dependence of the statistical variability of FDSOI MOSFETs with thin BOX

TitleBack-gate bias dependence of the statistical variability of FDSOI MOSFETs with thin BOX
Authors
Keywordsmetal gate granularity (MGG)
line edge roughness (LER)
random dopant fluctuation (RDF)
statistical variability (SV)
thin buried oxide (BOX)
Back-gate bias
Issue Date2013
Citation
IEEE Transactions on Electron Devices, 2013, v. 60, n. 2, p. 739-745 How to Cite?
AbstractThe impact of back-gate bias on the statistical variability (SV) of FDSOI MOSFETs with thin buried oxide (BOX) is studied via 3-D 'atomistic' drift-diffusion simulation. The impact of the principal sources of SV, i.e., random dopant fluctuations, line edge roughness, and metal gate granularity, on threshold voltage, drain-induced barrier lowering, and drive current is studied in detail. It is shown that reverse back-bias is beneficial in terms of reducing the dispersion of the off-current and the corresponding standby leakage power, whereas forward back-bias reduces the on-current variability. The correlation coefficients between relevant figures of merit and their trends against back-bias are also studied in detail, providing guidelines for the development of statistical compact models of thin-BOX FDSOI MOSFETs for low-standby-power circuit applications. © 1963-2012 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/221388
ISSN
2015 Impact Factor: 2.207
2015 SCImago Journal Rankings: 1.436

 

DC FieldValueLanguage
dc.contributor.authorYang, Yunxiang-
dc.contributor.authorMarkov, Stanislav-
dc.contributor.authorCheng, Binjie-
dc.contributor.authorZain, Anis Suhaila Mohd-
dc.contributor.authorLiu, Xiaoyan-
dc.contributor.authorCheng, Asen-
dc.date.accessioned2015-11-18T06:09:11Z-
dc.date.available2015-11-18T06:09:11Z-
dc.date.issued2013-
dc.identifier.citationIEEE Transactions on Electron Devices, 2013, v. 60, n. 2, p. 739-745-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10722/221388-
dc.description.abstractThe impact of back-gate bias on the statistical variability (SV) of FDSOI MOSFETs with thin buried oxide (BOX) is studied via 3-D 'atomistic' drift-diffusion simulation. The impact of the principal sources of SV, i.e., random dopant fluctuations, line edge roughness, and metal gate granularity, on threshold voltage, drain-induced barrier lowering, and drive current is studied in detail. It is shown that reverse back-bias is beneficial in terms of reducing the dispersion of the off-current and the corresponding standby leakage power, whereas forward back-bias reduces the on-current variability. The correlation coefficients between relevant figures of merit and their trends against back-bias are also studied in detail, providing guidelines for the development of statistical compact models of thin-BOX FDSOI MOSFETs for low-standby-power circuit applications. © 1963-2012 IEEE.-
dc.languageeng-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.rightsIEEE Transaction on Electron Devices. Copyright © IEEE.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.-
dc.subjectmetal gate granularity (MGG)-
dc.subjectline edge roughness (LER)-
dc.subjectrandom dopant fluctuation (RDF)-
dc.subjectstatistical variability (SV)-
dc.subjectthin buried oxide (BOX)-
dc.subjectBack-gate bias-
dc.titleBack-gate bias dependence of the statistical variability of FDSOI MOSFETs with thin BOX-
dc.typeArticle-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/TED.2012.2233203-
dc.identifier.scopuseid_2-s2.0-84872859244-
dc.identifier.hkuros248648-
dc.identifier.volume60-
dc.identifier.issue2-
dc.identifier.spage739-
dc.identifier.epage745-

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