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Article: Back-gate bias dependence of the statistical variability of FDSOI MOSFETs with thin BOX
Title | Back-gate bias dependence of the statistical variability of FDSOI MOSFETs with thin BOX |
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Authors | |
Keywords | metal gate granularity (MGG) line edge roughness (LER) random dopant fluctuation (RDF) statistical variability (SV) thin buried oxide (BOX) Back-gate bias |
Issue Date | 2013 |
Citation | IEEE Transactions on Electron Devices, 2013, v. 60, n. 2, p. 739-745 How to Cite? |
Abstract | The impact of back-gate bias on the statistical variability (SV) of FDSOI MOSFETs with thin buried oxide (BOX) is studied via 3-D 'atomistic' drift-diffusion simulation. The impact of the principal sources of SV, i.e., random dopant fluctuations, line edge roughness, and metal gate granularity, on threshold voltage, drain-induced barrier lowering, and drive current is studied in detail. It is shown that reverse back-bias is beneficial in terms of reducing the dispersion of the off-current and the corresponding standby leakage power, whereas forward back-bias reduces the on-current variability. The correlation coefficients between relevant figures of merit and their trends against back-bias are also studied in detail, providing guidelines for the development of statistical compact models of thin-BOX FDSOI MOSFETs for low-standby-power circuit applications. © 1963-2012 IEEE. |
Persistent Identifier | http://hdl.handle.net/10722/221388 |
ISSN | 2023 Impact Factor: 2.9 2023 SCImago Journal Rankings: 0.785 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Yang, Yunxiang | - |
dc.contributor.author | Markov, Stanislav | - |
dc.contributor.author | Cheng, Binjie | - |
dc.contributor.author | Zain, Anis Suhaila Mohd | - |
dc.contributor.author | Liu, Xiaoyan | - |
dc.contributor.author | Cheng, Asen | - |
dc.date.accessioned | 2015-11-18T06:09:11Z | - |
dc.date.available | 2015-11-18T06:09:11Z | - |
dc.date.issued | 2013 | - |
dc.identifier.citation | IEEE Transactions on Electron Devices, 2013, v. 60, n. 2, p. 739-745 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10722/221388 | - |
dc.description.abstract | The impact of back-gate bias on the statistical variability (SV) of FDSOI MOSFETs with thin buried oxide (BOX) is studied via 3-D 'atomistic' drift-diffusion simulation. The impact of the principal sources of SV, i.e., random dopant fluctuations, line edge roughness, and metal gate granularity, on threshold voltage, drain-induced barrier lowering, and drive current is studied in detail. It is shown that reverse back-bias is beneficial in terms of reducing the dispersion of the off-current and the corresponding standby leakage power, whereas forward back-bias reduces the on-current variability. The correlation coefficients between relevant figures of merit and their trends against back-bias are also studied in detail, providing guidelines for the development of statistical compact models of thin-BOX FDSOI MOSFETs for low-standby-power circuit applications. © 1963-2012 IEEE. | - |
dc.language | eng | - |
dc.relation.ispartof | IEEE Transactions on Electron Devices | - |
dc.subject | metal gate granularity (MGG) | - |
dc.subject | line edge roughness (LER) | - |
dc.subject | random dopant fluctuation (RDF) | - |
dc.subject | statistical variability (SV) | - |
dc.subject | thin buried oxide (BOX) | - |
dc.subject | Back-gate bias | - |
dc.title | Back-gate bias dependence of the statistical variability of FDSOI MOSFETs with thin BOX | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/TED.2012.2233203 | - |
dc.identifier.scopus | eid_2-s2.0-84872859244 | - |
dc.identifier.hkuros | 248648 | - |
dc.identifier.volume | 60 | - |
dc.identifier.issue | 2 | - |
dc.identifier.spage | 739 | - |
dc.identifier.epage | 745 | - |
dc.identifier.isi | WOS:000316817900029 | - |
dc.identifier.issnl | 0018-9383 | - |