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Conference Paper: Device Modelling from Atoms to Transistor: including the gate oxide

TitleDevice Modelling from Atoms to Transistor: including the gate oxide
Authors
Markov, SN
Issue Date2016
Citation
The 19th Annual Conference of The Physical Society of Hong Kong, The University of Hong Kong, Hong Kong, 3-4 June 2016 How to Cite?
DescriptionInvited speaker - Session 2.4 Device Physics and Related
Persistent Identifierhttp://hdl.handle.net/10722/239865

 

DC FieldValueLanguage
dc.contributor.authorMarkov, SN-
dc.date.accessioned2017-04-06T09:14:06Z-
dc.date.available2017-04-06T09:14:06Z-
dc.date.issued2016-
dc.identifier.citationThe 19th Annual Conference of The Physical Society of Hong Kong, The University of Hong Kong, Hong Kong, 3-4 June 2016-
dc.identifier.urihttp://hdl.handle.net/10722/239865-
dc.descriptionInvited speaker - Session 2.4 Device Physics and Related-
dc.languageeng-
dc.relation.ispartofAnnual Conference of The Physical Society of Hong Kong-
dc.titleDevice Modelling from Atoms to Transistor: including the gate oxide-
dc.typeConference_Paper-
dc.identifier.emailMarkov, SN: figaro@hku.hk-
dc.identifier.authorityMarkov, SN=rp02107-
dc.identifier.hkuros267311-

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