Browse by Author Brauer, G

TitleAuthor(s)YearView Count
Photoresponse from single upright-standing ZnO nanorods explored by photoconductive AFMBeinik, I; Kratzer, M; Wachauer, A; Wang, L; Piryatinski, YP; Brauer, G; Chen, X; Hsu, YF; Djurisic, A; Teichert, C20135
On the T2 trap in zinc oxide thin filmsSchmidt, M; Ellguth, M; Karsthof, R; v Wenckstern, H; Pickenhain, R; Grundmann, M; Brauer, G; Ling, FCC201291
Erratum: Electrical properties of ZnO nanorods studied by conductive atomic force microscopy (Journal of Applied Physics (2011) 110 (052005))Beinik, I; Kratzer, M; Wachauer, A; Wang, L; Lechner, RT; Teichert, C; Motz, C; Anwand, W; Brauer, G; Chen, XY; Hsu, YF; Djurišić, AB201249
Emission bands of nitrogen-implantation induced luminescent centers in ZnO crystals: experiment and theoryDai, XM; Xu, SJ; Ling, CC; Brauer, G; Anwand, W; Skorupa, W201275
Deep level transient spectroscopic study of oxygen implanted melt grown ZnO single crystalYe, ZR; Lu, XH; Ding, GW; Fung, S; Ling, CC; Brauer, G; Anwand, W2011418
Activities towards p-type doping of ZnOBrauer, G; Kuriplach, J; Ling, CC; Djurišić, AB2011215
Comprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO filmFan, J; Zhu, C; Yang, B; Fung, S; Beling, CD; Brauer, G; Anwand, W; Grambole, D; Skorupa, W; Wong, KS; Zhong, YC; Xie, Z; Ling, CC2011205
Ion-implantation induced nano distortion layer and its influence on nonlinear optical properties of ZnO single crystalsZheng, CC; Xu, SJ; Ning, JQ; Chen, YN; Lu, XH; Ling, CC; Che, CM; Gao, GY; Hao, JH; Brauer, G; Anwand, W2011150
Characterization of microstructural defects in melt grown ZnO single crystalsAnwand, W; Brauer, G; Grynszpan, RI; Cowan, TE; Schulz, D; Klimm, D; Iek, J; Kuriplach, J; Prochzka, I; Ling, CC; Djurii, AB; Klemm, V; Schreiber, G; Rafaja, D2011696
Electrical properties of ZnO nanorods studied by conductive atomic force microscopyBeinik, I; Kratzer, M; Wachauer, A; Wang, L; Lechner, RT; Teichert, C; Motz, C; Anwand, W; Brauer, G; Chen, XY; Hsu, XY; Djurišić, AB2011105
Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputteringFan, JC; W Ding, G; Fung, S; Xie, Z; Zhong, YC; Wong, KS; Brauer, G; Anwand, W; Grambole, D; Ling, CC2010692
Deep level transient spectroscopic study of nitrogen-implanted ZnO single crystalDing, G; Ling, CC; Anwand, W; Brauer, G; Skorupa, W2010244
Scanning probe microscopy-based characterization of ZnO nanorodsTeichert, C; Hou, Y; Beinik, I; Chen, X; Hsu, YF; Djurišić, AB; Anwand, W; Brauer, G201060
Deep-level defects study of arsenic-implanted ZnO single crystalZhu, CY; Ling, CC; Brauer, G; Anwand, W; Skorupa, W2009591
Characterization of ZnO nanostructures: A challenge to positron annihilation spectroscopy and other methodsBrauer, G; Anwand, W; Grambole, D; Egger, W; Sperr, P; Beinik, I; Wang, L; Teichert, C; Kuriplach, J; Lang, J; Zviagin, S; Cizmar, E; Ling, CC; Hsu, YF; Xi, YY; Chen, X; Djurišić, AB; Skorupa, W2009622
Arsenic doped p -type zinc oxide films grown by radio frequency magnetron sputteringFan, JC; Zhu, CY; Fung, S; Zhong, YC; Wong, KS; Xie, Z; Brauer, G; Anwand, W; Skorupa, W; To, CK; Yang, B; Beling, CD; Ling, CC2009771
Identification of Zn-vacancy-hydrogen complexes in ZnO single crystals: A challenge to positron annihilation spectroscopyBrauer, G; Anwand, W; Grambole, D; Grenzer, J; Skorupa, W; Čížek, J; Kuriplach, J; Procházka, I; Ling, CC; So, CK; Schulz, D; Klimm, D2009660
Defects in zinc-implanted ZnO thin filmsSchmidt, M; Ellguth, M; Czekalla, C; V Wenckstern, H; Pickenhain, R; Grundmann, M; Brauer, G; Skorupa, W; Helm, M; Gu, Q; Ling, CC2009610
Defect study in ZnO related structures-A multi-spectroscopic approachLing, CC; Cheung, CK; Gu, QL; Dai, XM; Xu, SJ; Zhu, CY; Luo, JM; Zhu, CY; Tam, KH; Djurišić, AB; Beling, CD; Fung, S; Lu, LW; Brauer, G; Anwand, W; Skorupa, W; Ong, HC2008529
Defects characterization in ZnO Schottky contact and homogeneous p-n junctionLing, FCC; Gu, Q; Zhu, C; Hsu, YF; Djurisic, A; Brauer, G; Anwand, W; Skorupa, W2008284