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Conference Paper: Current transport at low temperature in A1/6H-SiC Schottky barriers

TitleCurrent transport at low temperature in A1/6H-SiC Schottky barriers
Authors
Chavva, VRFung, SBeling, CDBrauer, G
Issue Date1996
Citation
Institute of Physics Conference Series No.142: Chapter 4 Paper presented at Silicon Carbide and Related Materials 1995 Conference, Kyoto, Japan, v. 142, p. 669-672 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/109752

 

DC FieldValueLanguage
dc.contributor.authorChavva, VRen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorBrauer, Gen_HK
dc.date.accessioned2010-09-26T01:35:45Z-
dc.date.available2010-09-26T01:35:45Z-
dc.date.issued1996en_HK
dc.identifier.citationInstitute of Physics Conference Series No.142: Chapter 4 Paper presented at Silicon Carbide and Related Materials 1995 Conference, Kyoto, Japan, v. 142, p. 669-672en_HK
dc.identifier.urihttp://hdl.handle.net/10722/109752-
dc.languageengen_HK
dc.relation.ispartofInstitute of Physics Conference Series No.142: Chapter 4 Paper presented at Silicon Carbide and Related Materials 1995 Conference, Kyoto, Japanen_HK
dc.titleCurrent transport at low temperature in A1/6H-SiC Schottky barriersen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailFung, S: sfung@hkucc.hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.hkuros15163en_HK
dc.identifier.volume, v. 142en_HK
dc.identifier.spage669en_HK
dc.identifier.epage672en_HK

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