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Conference Paper: Au/n-ZnO rectifying contacts fabricated with hydrogen peroxide pre-treatment
Title | Au/n-ZnO rectifying contacts fabricated with hydrogen peroxide pre-treatment |
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Authors | |
Issue Date | 2007 |
Publisher | Materials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html |
Citation | Materials Research Society Spring Meeting 2007, 9-13 April 2007, San Francisco, Symposium F: Semiconductor Defect Engineering--Materials, Synthetic Structures, and Devices II, v. 994, p. F11-15 How to Cite? |
Abstract | Au contacts were fabricated on pressurized melted grown n-type ZnO single crystal samples pre-treated with boiling organic solvent and hydrogen peroxide. Contacts fabricated without any pre-treatment and with bofling organic solvent pre-treatment were found to have ohmic behavior. For the samples pre-treated with hydrogen peroxide, the Au contacts were found to have rectifying property. Systematic investigation was performed to study the dependence of the Schottky barrier height and the reverse bias leakage current on the temperature and the duration of the pre-treatment. Positron annihilation spectroscopy (PAS), X-ray photoemission (XPS) and scanning electron microscope (SEM) were also used to understand how the vacancy type defect, contamination and surface morphology would influence the electrical property of the fabricated contacts. © 2007 Materials Research Society. |
Persistent Identifier | http://hdl.handle.net/10722/109765 |
ISSN | 2019 SCImago Journal Rankings: 0.114 |
References |
DC Field | Value | Language |
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dc.contributor.author | Gu, Q | en_HK |
dc.contributor.author | Ling, CC | en_HK |
dc.contributor.author | Cheung, CK | en_HK |
dc.contributor.author | Luo, J | en_HK |
dc.contributor.author | Chen, X | en_HK |
dc.contributor.author | Djurisic, A | en_HK |
dc.contributor.author | Brauer, G | en_HK |
dc.contributor.author | Anwand, W | en_HK |
dc.contributor.author | Skorupa, W | en_HK |
dc.contributor.author | Reuther, H | en_HK |
dc.contributor.author | Ong, HC | en_HK |
dc.date.accessioned | 2010-09-26T01:36:19Z | - |
dc.date.available | 2010-09-26T01:36:19Z | - |
dc.date.issued | 2007 | en_HK |
dc.identifier.citation | Materials Research Society Spring Meeting 2007, 9-13 April 2007, San Francisco, Symposium F: Semiconductor Defect Engineering--Materials, Synthetic Structures, and Devices II, v. 994, p. F11-15 | en_HK |
dc.identifier.issn | 0272-9172 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/109765 | - |
dc.description.abstract | Au contacts were fabricated on pressurized melted grown n-type ZnO single crystal samples pre-treated with boiling organic solvent and hydrogen peroxide. Contacts fabricated without any pre-treatment and with bofling organic solvent pre-treatment were found to have ohmic behavior. For the samples pre-treated with hydrogen peroxide, the Au contacts were found to have rectifying property. Systematic investigation was performed to study the dependence of the Schottky barrier height and the reverse bias leakage current on the temperature and the duration of the pre-treatment. Positron annihilation spectroscopy (PAS), X-ray photoemission (XPS) and scanning electron microscope (SEM) were also used to understand how the vacancy type defect, contamination and surface morphology would influence the electrical property of the fabricated contacts. © 2007 Materials Research Society. | en_HK |
dc.language | eng | en_HK |
dc.publisher | Materials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html | en_HK |
dc.relation.ispartof | Materials Research Society Symposium Proceedings | en_HK |
dc.rights | Materials Research Society Spring Meeting 2007, 9-13 April 2007, San Francisco, Symposium F: Semiconductor Defect Engineering--Materials, Synthetic Structures, and Devices II. Copyright © Materials Research Society. | en_HK |
dc.title | Au/n-ZnO rectifying contacts fabricated with hydrogen peroxide pre-treatment | en_HK |
dc.type | Conference_Paper | en_HK |
dc.identifier.email | Ling, CC: ccling@hkucc.hku.hk | en_HK |
dc.identifier.email | Djurisic, A: dalek@hku.hk | en_HK |
dc.identifier.authority | Ling, CC=rp00747 | en_HK |
dc.identifier.authority | Djurisic, A=rp00690 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.scopus | eid_2-s2.0-45749151414 | en_HK |
dc.identifier.hkuros | 128939 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-45749151414&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 994 | en_HK |
dc.identifier.spage | 281 | en_HK |
dc.identifier.epage | 287 | en_HK |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Gu, Q=16067090400 | en_HK |
dc.identifier.scopusauthorid | Ling, CC=13310239300 | en_HK |
dc.identifier.scopusauthorid | Cheung, CK=10044144900 | en_HK |
dc.identifier.scopusauthorid | Luo, J=24081000400 | en_HK |
dc.identifier.scopusauthorid | Chen, X=26642908200 | en_HK |
dc.identifier.scopusauthorid | Djurisic, A=7004904830 | en_HK |
dc.identifier.scopusauthorid | Brauer, G=7101650540 | en_HK |
dc.identifier.scopusauthorid | Anwand, W=9432786300 | en_HK |
dc.identifier.scopusauthorid | Skorupa, W=7102608722 | en_HK |
dc.identifier.scopusauthorid | Reuther, H=7005083095 | en_HK |
dc.identifier.scopusauthorid | Ong, HC=7102298056 | en_HK |
dc.identifier.issnl | 0272-9172 | - |