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Conference Paper: Au/n-ZnO rectifying contacts fabricated with hydrogen peroxide pre-treatment

TitleAu/n-ZnO rectifying contacts fabricated with hydrogen peroxide pre-treatment
Authors
Issue Date2007
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Materials Research Society Spring Meeting 2007, 9-13 April 2007, San Francisco, Symposium F: Semiconductor Defect Engineering--Materials, Synthetic Structures, and Devices II, v. 994, p. F11-15 How to Cite?
AbstractAu contacts were fabricated on pressurized melted grown n-type ZnO single crystal samples pre-treated with boiling organic solvent and hydrogen peroxide. Contacts fabricated without any pre-treatment and with bofling organic solvent pre-treatment were found to have ohmic behavior. For the samples pre-treated with hydrogen peroxide, the Au contacts were found to have rectifying property. Systematic investigation was performed to study the dependence of the Schottky barrier height and the reverse bias leakage current on the temperature and the duration of the pre-treatment. Positron annihilation spectroscopy (PAS), X-ray photoemission (XPS) and scanning electron microscope (SEM) were also used to understand how the vacancy type defect, contamination and surface morphology would influence the electrical property of the fabricated contacts. © 2007 Materials Research Society.
Persistent Identifierhttp://hdl.handle.net/10722/109765
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorGu, Qen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorCheung, CKen_HK
dc.contributor.authorLuo, Jen_HK
dc.contributor.authorChen, Xen_HK
dc.contributor.authorDjurisic, Aen_HK
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorAnwand, Wen_HK
dc.contributor.authorSkorupa, Wen_HK
dc.contributor.authorReuther, Hen_HK
dc.contributor.authorOng, HCen_HK
dc.date.accessioned2010-09-26T01:36:19Z-
dc.date.available2010-09-26T01:36:19Z-
dc.date.issued2007en_HK
dc.identifier.citationMaterials Research Society Spring Meeting 2007, 9-13 April 2007, San Francisco, Symposium F: Semiconductor Defect Engineering--Materials, Synthetic Structures, and Devices II, v. 994, p. F11-15en_HK
dc.identifier.issn0272-9172en_HK
dc.identifier.urihttp://hdl.handle.net/10722/109765-
dc.description.abstractAu contacts were fabricated on pressurized melted grown n-type ZnO single crystal samples pre-treated with boiling organic solvent and hydrogen peroxide. Contacts fabricated without any pre-treatment and with bofling organic solvent pre-treatment were found to have ohmic behavior. For the samples pre-treated with hydrogen peroxide, the Au contacts were found to have rectifying property. Systematic investigation was performed to study the dependence of the Schottky barrier height and the reverse bias leakage current on the temperature and the duration of the pre-treatment. Positron annihilation spectroscopy (PAS), X-ray photoemission (XPS) and scanning electron microscope (SEM) were also used to understand how the vacancy type defect, contamination and surface morphology would influence the electrical property of the fabricated contacts. © 2007 Materials Research Society.en_HK
dc.languageengen_HK
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_HK
dc.relation.ispartofMaterials Research Society Symposium Proceedingsen_HK
dc.rightsMaterials Research Society Spring Meeting 2007, 9-13 April 2007, San Francisco, Symposium F: Semiconductor Defect Engineering--Materials, Synthetic Structures, and Devices II. Copyright © Materials Research Society.en_HK
dc.titleAu/n-ZnO rectifying contacts fabricated with hydrogen peroxide pre-treatmenten_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailDjurisic, A: dalek@hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityDjurisic, A=rp00690en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-45749151414en_HK
dc.identifier.hkuros128939en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-45749151414&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume994en_HK
dc.identifier.spage281en_HK
dc.identifier.epage287en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridGu, Q=16067090400en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridCheung, CK=10044144900en_HK
dc.identifier.scopusauthoridLuo, J=24081000400en_HK
dc.identifier.scopusauthoridChen, X=26642908200en_HK
dc.identifier.scopusauthoridDjurisic, A=7004904830en_HK
dc.identifier.scopusauthoridBrauer, G=7101650540en_HK
dc.identifier.scopusauthoridAnwand, W=9432786300en_HK
dc.identifier.scopusauthoridSkorupa, W=7102608722en_HK
dc.identifier.scopusauthoridReuther, H=7005083095en_HK
dc.identifier.scopusauthoridOng, HC=7102298056en_HK

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