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Conference Paper: Aluminum and electron-irradiation induced deep-levels in n-type and p-type 6H-SiC

TitleAluminum and electron-irradiation induced deep-levels in n-type and p-type 6H-SiC
Authors
KeywordsPhysics engineering chemistry
Issue Date1998
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
The 1998 Defect and impurity engineered semiconductors II, Materials Research Society Symposium, San Francisco, A., 13-17 April 1998. In Conference Proceedings, 1998, v. 510, p. 455-459 How to Cite?
AbstractTwo deep levels, located at Ev+0.26eV and Ec-0.44eV, in Al-implanted n-type samples and one at Ev+0.48eV in p-type samples have been observed by the deep level transient spectroscopy. The level of Ev+0.26eV is identified as the shallower aluminum-acceptor. The 1.7 MeV electron-irradiation, used as a probe to distinguish the implantation induced deep-levels, induces at least six electron traps in the n-SiC and one hole-trap in the p-type material. The peak positions of these deep-levels in DLTS spectra are quite different from those induced by Al-implantation. This result suggests that various damages are formed after heavy ion (Al) and light particle (e') irradiation.
Persistent Identifierhttp://hdl.handle.net/10722/47029
ISSN

 

DC FieldValueLanguage
dc.contributor.authorGong, Men_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, SHYen_HK
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorWirth, Hen_HK
dc.contributor.authorSkorupa, Wen_HK
dc.contributor.authorYou, ZPen_HK
dc.date.accessioned2007-10-30T07:04:49Z-
dc.date.available2007-10-30T07:04:49Z-
dc.date.issued1998en_HK
dc.identifier.citationThe 1998 Defect and impurity engineered semiconductors II, Materials Research Society Symposium, San Francisco, A., 13-17 April 1998. In Conference Proceedings, 1998, v. 510, p. 455-459en_HK
dc.identifier.issn0272-9172en_HK
dc.identifier.urihttp://hdl.handle.net/10722/47029-
dc.description.abstractTwo deep levels, located at Ev+0.26eV and Ec-0.44eV, in Al-implanted n-type samples and one at Ev+0.48eV in p-type samples have been observed by the deep level transient spectroscopy. The level of Ev+0.26eV is identified as the shallower aluminum-acceptor. The 1.7 MeV electron-irradiation, used as a probe to distinguish the implantation induced deep-levels, induces at least six electron traps in the n-SiC and one hole-trap in the p-type material. The peak positions of these deep-levels in DLTS spectra are quite different from those induced by Al-implantation. This result suggests that various damages are formed after heavy ion (Al) and light particle (e') irradiation.en_HK
dc.format.extent224923 bytes-
dc.format.extent13983 bytes-
dc.format.extent5932 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_HK
dc.relation.ispartofDefect and impurity engineered semiconductors II, Materials Research Society Symposium Proceedings-
dc.rightsMaterials Research Society Symposium Proceedings. Copyright © Materials Research Society.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineering chemistryen_HK
dc.titleAluminum and electron-irradiation induced deep-levels in n-type and p-type 6H-SiCen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0272-9172&volume=510&spage=455&epage=459&date=1998&atitle=Aluminum+and+electron-irradiation+induced+deep-levels+in+n-type+and+p-type+6H-SiCen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.hkuros38878-

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