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Article: Deep-level defects in n-type 6H silicon carbide induced by He implantation

TitleDeep-level defects in n-type 6H silicon carbide induced by He implantation
Authors
Issue Date2005
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2005, v. 98 n. 4 How to Cite?
AbstractDefects in He-implanted n -type 6H-SiC samples have been studied with deep-level transient spectroscopy. A deep-level defect was identified by an intensity with a logarithmical dependence on the filling pulse width, which is characteristic of dislocation defects. Combined with information extracted from positron-annihilation spectroscopic measurements, this defect was associated with the defect vacancy bound to a dislocation. Defect levels at 0.380.44 eV (E1 E2), 0.50, 0.53, and 0.640.75 eV (Z1 Z2) were also induced by He implantation. Annealing studies on these samples were also performed and the results were compared with those obtained from e- -irradiated (0.3 and 1.7 MeV) and neutron-irradiated n -type 6H-SiC samples. The E1 E2 and the Z1 Z2 signals found in the He-implanted sample are more thermally stable than those found in the electron-irradiated or the neutron-irradiated samples. © 2005 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/146196
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLing, CCen_HK
dc.contributor.authorChen, XDen_HK
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorAnwand, Wen_HK
dc.contributor.authorSkorupa, Wen_HK
dc.contributor.authorWang, HYen_HK
dc.contributor.authorWeng, HMen_HK
dc.date.accessioned2012-04-03T09:01:16Z-
dc.date.available2012-04-03T09:01:16Z-
dc.date.issued2005en_HK
dc.identifier.citationJournal Of Applied Physics, 2005, v. 98 n. 4en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/146196-
dc.description.abstractDefects in He-implanted n -type 6H-SiC samples have been studied with deep-level transient spectroscopy. A deep-level defect was identified by an intensity with a logarithmical dependence on the filling pulse width, which is characteristic of dislocation defects. Combined with information extracted from positron-annihilation spectroscopic measurements, this defect was associated with the defect vacancy bound to a dislocation. Defect levels at 0.380.44 eV (E1 E2), 0.50, 0.53, and 0.640.75 eV (Z1 Z2) were also induced by He implantation. Annealing studies on these samples were also performed and the results were compared with those obtained from e- -irradiated (0.3 and 1.7 MeV) and neutron-irradiated n -type 6H-SiC samples. The E1 E2 and the Z1 Z2 signals found in the He-implanted sample are more thermally stable than those found in the electron-irradiated or the neutron-irradiated samples. © 2005 American Institute of Physics.en_HK
dc.languageeng-
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.-
dc.rightsCopyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2005, v. 98 n. 4, p. 043508:1-6 and may be found at http://jap.aip.org/resource/1/japiau/v98/i4/p043508_s1-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleDeep-level defects in n-type 6H silicon carbide induced by He implantationen_HK
dc.typeArticleen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.2014934en_HK
dc.identifier.scopuseid_2-s2.0-25144447641en_HK
dc.identifier.hkuros109268-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-25144447641&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume98en_HK
dc.identifier.issue4en_HK
dc.identifier.spage043508:1-
dc.identifier.epage043508:6-
dc.identifier.isiWOS:000231551700034-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK
dc.identifier.scopusauthoridBrauer, G=7101650540en_HK
dc.identifier.scopusauthoridAnwand, W=9432786300en_HK
dc.identifier.scopusauthoridSkorupa, W=7102608722en_HK
dc.identifier.scopusauthoridWang, HY=7501740999en_HK
dc.identifier.scopusauthoridWeng, HM=7102468725en_HK

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