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Article: Deep level defects in 6H silicon carbide

TitleDeep level defects in 6H silicon carbide
六方 碳化硅中的深能級缺陷
Authors
Keywords6H-SiC
Electron irradiation
Deep level defect
Positron annihilation
Issue Date2004
Publisher中国科学院物理研究所. The Journal's web site is located at http://wl.periodicals.net.cn/default.html
Citation
物理, 2004, v. 33 n. 11, p. 786-790 How to Cite?
Physics, 2004, v. 33 n. 11, p. 786-790 How to Cite?
Abstract文章作者利用深能級瞬態譜 (DLTS) ,正電子湮滅譜 (PAS)和光致熒光譜 (PL)等譜分析技術研究了六方碳化硅中具有電活性的深能級缺陷 .這些深能級缺陷分別通過不同能量的電子輻照、中子輻照 ,或氦離子注入等產生 .經過研究和分析各種實驗測試的相關圖譜 ,作者給出了六方碳化硅中一些重要的深能級缺陷在可控輻照條件下產生和退火行為的研究結果以及這些深能級缺陷相關結構的實驗依據 . We have investigated the electrically active deep level defects in n-type 6H silicon carbide through the use of a series of complimentary spectroscopic techniques such as deep level transient spectroscopy, positron annihilation spectroscopy and photoluminescence. The deep level defects were created by neutron irradiation, He implantation and electron irradiation with different energies. After analysis of the information gained from the different types of spectroscopy, as well as consideration of the defect creation and annealing behavior under different controlled environments, we provide experimental evidence for the microstructure of certain important deep level defects.
Persistent Identifierhttp://hdl.handle.net/10722/80908
ISSN

 

DC FieldValueLanguage
dc.contributor.authorLing, CCen_HK
dc.contributor.authorChen, XDen_HK
dc.contributor.authorFung, SHYen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorGong, Men_HK
dc.contributor.authorGe, WKen_HK
dc.contributor.authorWang, JNen_HK
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorAnwand, Wen_HK
dc.contributor.authorSkorupa, Wen_HK
dc.date.accessioned2010-09-06T08:11:36Z-
dc.date.available2010-09-06T08:11:36Z-
dc.date.issued2004en_HK
dc.identifier.citation物理, 2004, v. 33 n. 11, p. 786-790en_HK
dc.identifier.citationPhysics, 2004, v. 33 n. 11, p. 786-790zh_HK
dc.identifier.issn0379-4148-
dc.identifier.urihttp://hdl.handle.net/10722/80908-
dc.description.abstract文章作者利用深能級瞬態譜 (DLTS) ,正電子湮滅譜 (PAS)和光致熒光譜 (PL)等譜分析技術研究了六方碳化硅中具有電活性的深能級缺陷 .這些深能級缺陷分別通過不同能量的電子輻照、中子輻照 ,或氦離子注入等產生 .經過研究和分析各種實驗測試的相關圖譜 ,作者給出了六方碳化硅中一些重要的深能級缺陷在可控輻照條件下產生和退火行為的研究結果以及這些深能級缺陷相關結構的實驗依據 . We have investigated the electrically active deep level defects in n-type 6H silicon carbide through the use of a series of complimentary spectroscopic techniques such as deep level transient spectroscopy, positron annihilation spectroscopy and photoluminescence. The deep level defects were created by neutron irradiation, He implantation and electron irradiation with different energies. After analysis of the information gained from the different types of spectroscopy, as well as consideration of the defect creation and annealing behavior under different controlled environments, we provide experimental evidence for the microstructure of certain important deep level defects.-
dc.languagechien_HK
dc.publisher中国科学院物理研究所. The Journal's web site is located at http://wl.periodicals.net.cn/default.htmlen_HK
dc.relation.ispartof物理en_HK
dc.relation.ispartofPhysicszh_HK
dc.subject6H-SiC-
dc.subjectElectron irradiation-
dc.subjectDeep level defect-
dc.subjectPositron annihilation-
dc.titleDeep level defects in 6H silicon carbideen_HK
dc.title六方 碳化硅中的深能級缺陷zh_HK
dc.typeArticleen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailChen, XD: chenxa@HKUSUA.hku.hken_HK
dc.identifier.emailFung, SHY: sfung@hkucc.hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hk-
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityFung, SHY=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_OA_fulltext-
dc.identifier.hkuros96505en_HK
dc.identifier.volume33-
dc.identifier.issue11-
dc.identifier.spage786-
dc.identifier.epage790-
dc.publisher.placeChina-

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