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Article: Comprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film
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TitleComprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film
 
AuthorsFan, J
Zhu, C
Yang, B1
Fung, S1
Beling, CD1
Brauer, G4
Anwand, W4
Grambole, D4
Skorupa, W4
Wong, KS3
Zhong, YC3
Xie, Z2
Ling, CC1
 
KeywordsArsenic
Hole concentration
Positron annihilation spectroscopy
Radio waves
Zinc oxide
 
Issue Date2011
 
PublisherAmerican Vacuum Society. The Journal's web site is located at http://ojps.aip.org/jvsta/
 
CitationJournal Of Vacuum Science And Technology A: Vacuum, Surfaces And Films, 2011, v. 29 n. 3 [How to Cite?]
DOI: http://dx.doi.org/10.1116/1.3525639
 
AbstractArsenic doped ZnO and ZnMgO films were deposited on SiO 2 using radio frequency magnetron sputtering and ZnO-Zn 3As 2 and ZnO-Zn 3As 2 -MgO targets, respectively. It was found that thermal activation is required to activate the formation of p -type conductivity. Hall measurements showed that p -type films with a hole concentration of ∼ 10(17) cm(-3) and mobility of ∼8 cm(2) V(-1) s(-1) were obtained at substrate temperatures of 400-500 °C. The shallow acceptor formation mechanism was investigated using x-ray photoelectron spectroscopy, positron annihilation, low temperature photoluminescence, and nuclear reaction analysis. The authors suggest that the thermal annealing activates the formation of the As(Zn)-2V(Zn) shallow acceptor complex and removes the compensating hydrogen center. © 2011 American Vacuum Society.
 
DescriptionThis article is based on material presented at the 6th International Workshop on Zinc Oxide and Related Materials
 
ISSN0734-2101
2013 Impact Factor: 2.140
2013 SCImago Journal Rankings: 0.382
 
DOIhttp://dx.doi.org/10.1116/1.3525639
 
ISI Accession Number IDWOS:000289689000027
Funding AgencyGrant Number
General Research Fund7031/08P
Research Grant Council
HKSAR
Small Project Funding
University of Hong Kong
Funding Information:

The work presented here was supported under the General Research Fund (Contract No. 7031/08P), Research Grant Council, HKSAR, the Small Project Funding, and the University Development Fund, The University of Hong Kong.

 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorFan, J
 
dc.contributor.authorZhu, C
 
dc.contributor.authorYang, B
 
dc.contributor.authorFung, S
 
dc.contributor.authorBeling, CD
 
dc.contributor.authorBrauer, G
 
dc.contributor.authorAnwand, W
 
dc.contributor.authorGrambole, D
 
dc.contributor.authorSkorupa, W
 
dc.contributor.authorWong, KS
 
dc.contributor.authorZhong, YC
 
dc.contributor.authorXie, Z
 
dc.contributor.authorLing, CC
 
dc.date.accessioned2011-10-28T02:46:50Z
 
dc.date.available2011-10-28T02:46:50Z
 
dc.date.issued2011
 
dc.description.abstractArsenic doped ZnO and ZnMgO films were deposited on SiO 2 using radio frequency magnetron sputtering and ZnO-Zn 3As 2 and ZnO-Zn 3As 2 -MgO targets, respectively. It was found that thermal activation is required to activate the formation of p -type conductivity. Hall measurements showed that p -type films with a hole concentration of ∼ 10(17) cm(-3) and mobility of ∼8 cm(2) V(-1) s(-1) were obtained at substrate temperatures of 400-500 °C. The shallow acceptor formation mechanism was investigated using x-ray photoelectron spectroscopy, positron annihilation, low temperature photoluminescence, and nuclear reaction analysis. The authors suggest that the thermal annealing activates the formation of the As(Zn)-2V(Zn) shallow acceptor complex and removes the compensating hydrogen center. © 2011 American Vacuum Society.
 
dc.description.naturepublished_or_final_version
 
dc.descriptionThis article is based on material presented at the 6th International Workshop on Zinc Oxide and Related Materials
 
dc.identifier.citationJournal Of Vacuum Science And Technology A: Vacuum, Surfaces And Films, 2011, v. 29 n. 3 [How to Cite?]
DOI: http://dx.doi.org/10.1116/1.3525639
 
dc.identifier.doihttp://dx.doi.org/10.1116/1.3525639
 
dc.identifier.epage03A103-4
 
dc.identifier.hkuros184609
 
dc.identifier.hkuros180797
 
dc.identifier.isiWOS:000289689000027
Funding AgencyGrant Number
General Research Fund7031/08P
Research Grant Council
HKSAR
Small Project Funding
University of Hong Kong
Funding Information:

The work presented here was supported under the General Research Fund (Contract No. 7031/08P), Research Grant Council, HKSAR, the Small Project Funding, and the University Development Fund, The University of Hong Kong.

 
dc.identifier.issn0734-2101
2013 Impact Factor: 2.140
2013 SCImago Journal Rankings: 0.382
 
dc.identifier.issue3
 
dc.identifier.scopuseid_2-s2.0-79955162022
 
dc.identifier.spage03A103-1
 
dc.identifier.urihttp://hdl.handle.net/10722/142474
 
dc.identifier.volume29
 
dc.languageeng
 
dc.publisherAmerican Vacuum Society. The Journal's web site is located at http://ojps.aip.org/jvsta/
 
dc.publisher.placeUnited States
 
dc.relation.ispartofJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
 
dc.relation.referencesReferences in Scopus
 
dc.rightsCopyright (2011) American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Vacuum Society. The following article appeared in Journal of Vacuum Science and Technology: Part A Vacuum, Surfaces and Films, 2011, v. 29 n. 3, p. 03A103-1-03A103-4 and may be found at http://avspublications.org/jvsta/resource/1/jvtad6/v29/i3/p03A103_s1
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.subjectArsenic
 
dc.subjectHole concentration
 
dc.subjectPositron annihilation spectroscopy
 
dc.subjectRadio waves
 
dc.subjectZinc oxide
 
dc.titleComprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film
 
dc.typeArticle
 
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<contributor.author>Beling, CD</contributor.author>
<contributor.author>Brauer, G</contributor.author>
<contributor.author>Anwand, W</contributor.author>
<contributor.author>Grambole, D</contributor.author>
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<description.abstract>Arsenic doped ZnO and ZnMgO films were deposited on SiO 2 using radio frequency magnetron sputtering and ZnO-Zn 3As 2 and ZnO-Zn 3As 2 -MgO targets, respectively. It was found that thermal activation is required to activate the formation of p -type conductivity. Hall measurements showed that p -type films with a hole concentration of &#8764; 10(17) cm(-3) and mobility of &#8764;8 cm(2) V(-1) s(-1) were obtained at substrate temperatures of 400-500 &#176;C. The shallow acceptor formation mechanism was investigated using x-ray photoelectron spectroscopy, positron annihilation, low temperature photoluminescence, and nuclear reaction analysis. The authors suggest that the thermal annealing activates the formation of the As(Zn)-2V(Zn) shallow acceptor complex and removes the compensating hydrogen center. &#169; 2011 American Vacuum Society.</description.abstract>
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Author Affiliations
  1. The University of Hong Kong
  2. Hunan University
  3. Hong Kong University of Science and Technology
  4. Forschungszentrum Dresden Rossendorf