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Article: Comprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film

TitleComprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film
Authors
KeywordsArsenic
Hole concentration
Positron annihilation spectroscopy
Radio waves
Zinc oxide
Issue Date2011
PublisherAmerican Vacuum Society. The Journal's web site is located at http://ojps.aip.org/jvsta/
Citation
Journal Of Vacuum Science And Technology A: Vacuum, Surfaces And Films, 2011, v. 29 n. 3 How to Cite?
AbstractArsenic doped ZnO and ZnMgO films were deposited on SiO 2 using radio frequency magnetron sputtering and ZnO-Zn 3As 2 and ZnO-Zn 3As 2 -MgO targets, respectively. It was found that thermal activation is required to activate the formation of p -type conductivity. Hall measurements showed that p -type films with a hole concentration of ∼ 10(17) cm(-3) and mobility of ∼8 cm(2) V(-1) s(-1) were obtained at substrate temperatures of 400-500 °C. The shallow acceptor formation mechanism was investigated using x-ray photoelectron spectroscopy, positron annihilation, low temperature photoluminescence, and nuclear reaction analysis. The authors suggest that the thermal annealing activates the formation of the As(Zn)-2V(Zn) shallow acceptor complex and removes the compensating hydrogen center. © 2011 American Vacuum Society.
DescriptionThis article is based on material presented at the 6th International Workshop on Zinc Oxide and Related Materials
Persistent Identifierhttp://hdl.handle.net/10722/142474
ISSN
2014 Impact Factor: 2.322
2014 SCImago Journal Rankings: 0.315
ISI Accession Number ID
Funding AgencyGrant Number
General Research Fund7031/08P
Research Grant Council
HKSAR
Small Project Funding
University of Hong Kong
Funding Information:

The work presented here was supported under the General Research Fund (Contract No. 7031/08P), Research Grant Council, HKSAR, the Small Project Funding, and the University Development Fund, The University of Hong Kong.

References

 

DC FieldValueLanguage
dc.contributor.authorFan, Jen_HK
dc.contributor.authorZhu, Cen_HK
dc.contributor.authorYang, Ben_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorAnwand, Wen_HK
dc.contributor.authorGrambole, Den_HK
dc.contributor.authorSkorupa, Wen_HK
dc.contributor.authorWong, KSen_HK
dc.contributor.authorZhong, YCen_HK
dc.contributor.authorXie, Zen_HK
dc.contributor.authorLing, CCen_HK
dc.date.accessioned2011-10-28T02:46:50Z-
dc.date.available2011-10-28T02:46:50Z-
dc.date.issued2011en_HK
dc.identifier.citationJournal Of Vacuum Science And Technology A: Vacuum, Surfaces And Films, 2011, v. 29 n. 3en_HK
dc.identifier.issn0734-2101en_HK
dc.identifier.urihttp://hdl.handle.net/10722/142474-
dc.descriptionThis article is based on material presented at the 6th International Workshop on Zinc Oxide and Related Materials-
dc.description.abstractArsenic doped ZnO and ZnMgO films were deposited on SiO 2 using radio frequency magnetron sputtering and ZnO-Zn 3As 2 and ZnO-Zn 3As 2 -MgO targets, respectively. It was found that thermal activation is required to activate the formation of p -type conductivity. Hall measurements showed that p -type films with a hole concentration of ∼ 10(17) cm(-3) and mobility of ∼8 cm(2) V(-1) s(-1) were obtained at substrate temperatures of 400-500 °C. The shallow acceptor formation mechanism was investigated using x-ray photoelectron spectroscopy, positron annihilation, low temperature photoluminescence, and nuclear reaction analysis. The authors suggest that the thermal annealing activates the formation of the As(Zn)-2V(Zn) shallow acceptor complex and removes the compensating hydrogen center. © 2011 American Vacuum Society.en_HK
dc.languageengen_US
dc.publisherAmerican Vacuum Society. The Journal's web site is located at http://ojps.aip.org/jvsta/en_HK
dc.relation.ispartofJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Filmsen_HK
dc.rightsCopyright (2011) American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Vacuum Society. The following article appeared in Journal of Vacuum Science and Technology: Part A Vacuum, Surfaces and Films, 2011, v. 29 n. 3, p. 03A103-1-03A103-4 and may be found at http://avspublications.org/jvsta/resource/1/jvtad6/v29/i3/p03A103_s1-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectArsenic-
dc.subjectHole concentration-
dc.subjectPositron annihilation spectroscopy-
dc.subjectRadio waves-
dc.subjectZinc oxide-
dc.titleComprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO filmen_HK
dc.typeArticleen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1116/1.3525639en_HK
dc.identifier.scopuseid_2-s2.0-79955162022en_HK
dc.identifier.hkuros184609en_US
dc.identifier.hkuros180797-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79955162022&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume29en_HK
dc.identifier.issue3en_HK
dc.identifier.spage03A103-1en_US
dc.identifier.epage03A103-4en_US
dc.identifier.isiWOS:000289689000027-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridFan, JC=36019048800en_HK
dc.identifier.scopusauthoridZhu, CY=14007977600en_HK
dc.identifier.scopusauthoridYang, B=55416326500en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridBrauer, G=7101650540en_HK
dc.identifier.scopusauthoridAnwand, W=9432786300en_HK
dc.identifier.scopusauthoridGrambole, D=7004711621en_HK
dc.identifier.scopusauthoridSkorupa, W=7102608722en_HK
dc.identifier.scopusauthoridWong, KS=7404759949en_HK
dc.identifier.scopusauthoridZhong, YC=8623189300en_HK
dc.identifier.scopusauthoridXie, Z=15060759300en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.customcontrol.immutablesml 130325-

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