Article: Comprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film

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TitleComprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film
AuthorsFan, J
Zhu, C
Yang, B2
Fung, S2
Beling, CD2
Brauer, G4
Anwand, W4
Grambole, D4
Skorupa, W4
Wong, KS3
Zhong, YC3
Xie, Z1
Ling, CC2
KeywordsArsenic
Hole concentration
Positron annihilation spectroscopy
Radio waves
Zinc oxide
Issue Date2011
PublisherAmerican Vacuum Society. The Journal's web site is located at http://ojps.aip.org/jvsta/
CitationJournal Of Vacuum Science And Technology A: Vacuum, Surfaces And Films, 2011, v. 29 n. 3 [How to Cite?]
DOI: http://dx.doi.org/10.1116/1.3525639
AbstractArsenic doped ZnO and ZnMgO films were deposited on SiO 2 using radio frequency magnetron sputtering and ZnO-Zn 3As 2 and ZnO-Zn 3As 2 -MgO targets, respectively. It was found that thermal activation is required to activate the formation of p -type conductivity. Hall measurements showed that p -type films with a hole concentration of ∼ 10(17) cm(-3) and mobility of ∼8 cm(2) V(-1) s(-1) were obtained at substrate temperatures of 400-500 °C. The shallow acceptor formation mechanism was investigated using x-ray photoelectron spectroscopy, positron annihilation, low temperature photoluminescence, and nuclear reaction analysis. The authors suggest that the thermal annealing activates the formation of the As(Zn)-2V(Zn) shallow acceptor complex and removes the compensating hydrogen center. © 2011 American Vacuum Society.
DescriptionThis article is based on material presented at the 6th International Workshop on Zinc Oxide and Related Materials
ISSN0734-2101
2011 Impact Factor: 1.253
2011 SCImago Journal Rankings: 0.113
DOIhttp://dx.doi.org/10.1116/1.3525639
ISI Accession Number IDWOS:000289689000027
Funding AgencyGrant Number
General Research Fund7031/08P
Research Grant Council
HKSAR
Small Project Funding
University of Hong Kong
Funding Information:

The work presented here was supported under the General Research Fund (Contract No. 7031/08P), Research Grant Council, HKSAR, the Small Project Funding, and the University Development Fund, The University of Hong Kong.

ReferencesReferences in Scopus
DC Field
Value
dc.contributor.authorFan, J
dc.contributor.authorZhu, C
dc.contributor.authorYang, B
dc.contributor.authorFung, S
dc.contributor.authorBeling, CD
dc.contributor.authorBrauer, G
dc.contributor.authorAnwand, W
dc.contributor.authorGrambole, D
dc.contributor.authorSkorupa, W
dc.contributor.authorWong, KS
dc.contributor.authorZhong, YC
dc.contributor.authorXie, Z
dc.contributor.authorLing, CC
dc.date.accessioned2011-10-28T02:46:50Z
dc.date.available2011-10-28T02:46:50Z
dc.date.issued2011
dc.description.abstractArsenic doped ZnO and ZnMgO films were deposited on SiO 2 using radio frequency magnetron sputtering and ZnO-Zn 3As 2 and ZnO-Zn 3As 2 -MgO targets, respectively. It was found that thermal activation is required to activate the formation of p -type conductivity. Hall measurements showed that p -type films with a hole concentration of ∼ 10(17) cm(-3) and mobility of ∼8 cm(2) V(-1) s(-1) were obtained at substrate temperatures of 400-500 °C. The shallow acceptor formation mechanism was investigated using x-ray photoelectron spectroscopy, positron annihilation, low temperature photoluminescence, and nuclear reaction analysis. The authors suggest that the thermal annealing activates the formation of the As(Zn)-2V(Zn) shallow acceptor complex and removes the compensating hydrogen center. © 2011 American Vacuum Society.
dc.description.naturepublished_or_final_version
dc.descriptionThis article is based on material presented at the 6th International Workshop on Zinc Oxide and Related Materials
dc.identifier.citationJournal Of Vacuum Science And Technology A: Vacuum, Surfaces And Films, 2011, v. 29 n. 3 [How to Cite?]
DOI: http://dx.doi.org/10.1116/1.3525639
dc.identifier.doihttp://dx.doi.org/10.1116/1.3525639
dc.identifier.epage03A103-4
dc.identifier.hkuros184609
dc.identifier.hkuros180797
dc.identifier.isiWOS:000289689000027
Funding AgencyGrant Number
General Research Fund7031/08P
Research Grant Council
HKSAR
Small Project Funding
University of Hong Kong
Funding Information:

The work presented here was supported under the General Research Fund (Contract No. 7031/08P), Research Grant Council, HKSAR, the Small Project Funding, and the University Development Fund, The University of Hong Kong.

dc.identifier.issn0734-2101
2011 Impact Factor: 1.253
2011 SCImago Journal Rankings: 0.113
dc.identifier.issue3
dc.identifier.scopuseid_2-s2.0-79955162022
dc.identifier.spage03A103-1
dc.identifier.urihttp://hdl.handle.net/10722/142474
dc.identifier.volume29
dc.languageeng
dc.publisherAmerican Vacuum Society. The Journal's web site is located at http://ojps.aip.org/jvsta/
dc.publisher.placeUnited States
dc.relation.ispartofJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
dc.relation.referencesReferences in Scopus
dc.rightsCopyright (2011) American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Vacuum Society. The following article appeared in Journal of Vacuum Science and Technology: Part A Vacuum, Surfaces and Films, 2011, v. 29 n. 3, p. 03A103-1-03A103-4 and may be found at http://avspublications.org/jvsta/resource/1/jvtad6/v29/i3/p03A103_s1
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
dc.subjectArsenic
dc.subjectHole concentration
dc.subjectPositron annihilation spectroscopy
dc.subjectRadio waves
dc.subjectZinc oxide
dc.titleComprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film
dc.typeArticle
Author Affiliations
  1. Hunan University
  2. The University of Hong Kong
  3. Hong Kong University of Science and Technology
  4. Forschungszentrum Dresden Rossendorf