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Article: Characterization of microstructural defects in melt grown ZnO single crystals
Title | Characterization of microstructural defects in melt grown ZnO single crystals | ||||||||||||
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Authors | |||||||||||||
Keywords | Crystal growth from melt Crystal microstructure II-VI semiconductors Interstitials Light absorption | ||||||||||||
Issue Date | 2011 | ||||||||||||
Publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | ||||||||||||
Citation | Journal of Applied Physics, 2011, v. 109 n. 6, article no. 063516 How to Cite? | ||||||||||||
Abstract | Various nominally undoped, hydrothermally or melt grown (MG) ZnO single crystals have been investigated by standard positron lifetime measurements. Furthermore, optical transmission measurements and structural characterizations have been performed; the content of hydrogen in the bound state was determined by nuclear reaction analysis. A positron lifetime of 165-167 ps, measured for a brownish MG ZnO sample containing (0.30 0.03) at.- of bound hydrogen, matches perfectly the value found for colorless MG ZnO crystals. The edge shift, observed in the blue light domain of the optical absorption for the former sample with respect to the latter samples, is estimated to be 0.70 eV, and found equal to a value reported previously. The possible role of zinc interstitials is considered and discussed. Microstructure analysis by X-ray diffraction and transmission electron microscopy revealed the presence of stacking faults in MG crystals in a high concentration, which suggests these defects to be responsible for the observed positron lifetime. © 2011 American Institute of Physics. | ||||||||||||
Persistent Identifier | http://hdl.handle.net/10722/134642 | ||||||||||||
ISSN | 2023 Impact Factor: 2.7 2023 SCImago Journal Rankings: 0.649 | ||||||||||||
ISI Accession Number ID |
Funding Information: Financial support from the Research Grant Council of Hong Kong (HKU7031/08P and G_HK026/07) and German Academic Exchange Service (DAAD; D/08/01769) for cooperation visits between University of Hong Kong and Forschungszentrum Dresden-Rossendorf in 2008/2009 is gratefully acknowledged. A part of the work was performed within the Cluster of Excellence "Structure Design of Novel High Performance Materials via Atomic Design and Defect Engineering (ADDE)" that is financially supported by the European Union and by the Ministry of Science and Art of Saxony (SMWK). The support provided by the Ministry of Schools, Youths and Sports of the Czech Republic through the research plan MSM 0021620834 is also appreciated. | ||||||||||||
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Grants |
DC Field | Value | Language |
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dc.contributor.author | Anwand, W | en_HK |
dc.contributor.author | Brauer, G | en_HK |
dc.contributor.author | Grynszpan, RI | en_HK |
dc.contributor.author | Cowan, TE | en_HK |
dc.contributor.author | Schulz, D | en_HK |
dc.contributor.author | Klimm, D | en_HK |
dc.contributor.author | Iek, J | en_HK |
dc.contributor.author | Kuriplach, J | en_HK |
dc.contributor.author | Prochzka, I | en_HK |
dc.contributor.author | Ling, CC | en_HK |
dc.contributor.author | Djurii, AB | en_HK |
dc.contributor.author | Klemm, V | en_HK |
dc.contributor.author | Schreiber, G | en_HK |
dc.contributor.author | Rafaja, D | en_HK |
dc.date.accessioned | 2011-07-05T08:03:51Z | - |
dc.date.available | 2011-07-05T08:03:51Z | - |
dc.date.issued | 2011 | en_HK |
dc.identifier.citation | Journal of Applied Physics, 2011, v. 109 n. 6, article no. 063516 | - |
dc.identifier.issn | 0021-8979 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/134642 | - |
dc.description.abstract | Various nominally undoped, hydrothermally or melt grown (MG) ZnO single crystals have been investigated by standard positron lifetime measurements. Furthermore, optical transmission measurements and structural characterizations have been performed; the content of hydrogen in the bound state was determined by nuclear reaction analysis. A positron lifetime of 165-167 ps, measured for a brownish MG ZnO sample containing (0.30 0.03) at.- of bound hydrogen, matches perfectly the value found for colorless MG ZnO crystals. The edge shift, observed in the blue light domain of the optical absorption for the former sample with respect to the latter samples, is estimated to be 0.70 eV, and found equal to a value reported previously. The possible role of zinc interstitials is considered and discussed. Microstructure analysis by X-ray diffraction and transmission electron microscopy revealed the presence of stacking faults in MG crystals in a high concentration, which suggests these defects to be responsible for the observed positron lifetime. © 2011 American Institute of Physics. | en_HK |
dc.language | eng | - |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | en_HK |
dc.relation.ispartof | Journal of Applied Physics | en_HK |
dc.rights | Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2011, v. 109 n. 6, article no. 063516 and may be found at https://doi.org/10.1063/1.3559264 | - |
dc.subject | Crystal growth from melt | - |
dc.subject | Crystal microstructure | - |
dc.subject | II-VI semiconductors | - |
dc.subject | Interstitials | - |
dc.subject | Light absorption | - |
dc.title | Characterization of microstructural defects in melt grown ZnO single crystals | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=109&issue=6, article no. 063516&spage=&epage=&date=2011&atitle=Characterization+of+microstructural+defects+in+melt+grown+ZnO+single+crystals | - |
dc.identifier.email | Ling, CC: ccling@hkucc.hku.hk | en_HK |
dc.identifier.authority | Ling, CC=rp00747 | en_HK |
dc.description.nature | published_or_final_version | en_US |
dc.identifier.doi | 10.1063/1.3559264 | en_HK |
dc.identifier.scopus | eid_2-s2.0-79953672933 | en_HK |
dc.identifier.hkuros | 184968 | - |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-79953672933&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 109 | en_HK |
dc.identifier.issue | 6 | en_HK |
dc.identifier.spage | article no. 063516 | - |
dc.identifier.epage | article no. 063516 | - |
dc.identifier.isi | WOS:000289149900034 | - |
dc.publisher.place | United States | en_HK |
dc.relation.project | Ion-implantation of ZnO material: dopant activation and defect characterization | - |
dc.identifier.scopusauthorid | Anwand, W=9432786300 | en_HK |
dc.identifier.scopusauthorid | Brauer, G=7101650540 | en_HK |
dc.identifier.scopusauthorid | Grynszpan, RI=23008385300 | en_HK |
dc.identifier.scopusauthorid | Cowan, TE=7004979468 | en_HK |
dc.identifier.scopusauthorid | Schulz, D=7201870256 | en_HK |
dc.identifier.scopusauthorid | Klimm, D=6604026374 | en_HK |
dc.identifier.scopusauthorid | Iek, J=37097309100 | en_HK |
dc.identifier.scopusauthorid | Kuriplach, J=7003293116 | en_HK |
dc.identifier.scopusauthorid | Prochzka, I=37097780100 | en_HK |
dc.identifier.scopusauthorid | Ling, CC=13310239300 | en_HK |
dc.identifier.scopusauthorid | Djurii, AB=37070408600 | en_HK |
dc.identifier.scopusauthorid | Klemm, V=6701475534 | en_HK |
dc.identifier.scopusauthorid | Schreiber, G=14033312700 | en_HK |
dc.identifier.scopusauthorid | Rafaja, D=7005898313 | en_HK |
dc.identifier.issnl | 0021-8979 | - |