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Article: Characterization of microstructural defects in melt grown ZnO single crystals

TitleCharacterization of microstructural defects in melt grown ZnO single crystals
Authors
KeywordsCrystal growth from melt
Crystal microstructure
II-VI semiconductors
Interstitials
Light absorption
Issue Date2011
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2011, v. 109 n. 6 How to Cite?
AbstractVarious nominally undoped, hydrothermally or melt grown (MG) ZnO single crystals have been investigated by standard positron lifetime measurements. Furthermore, optical transmission measurements and structural characterizations have been performed; the content of hydrogen in the bound state was determined by nuclear reaction analysis. A positron lifetime of 165-167 ps, measured for a brownish MG ZnO sample containing (0.30 0.03) at.- of bound hydrogen, matches perfectly the value found for colorless MG ZnO crystals. The edge shift, observed in the blue light domain of the optical absorption for the former sample with respect to the latter samples, is estimated to be 0.70 eV, and found equal to a value reported previously. The possible role of zinc interstitials is considered and discussed. Microstructure analysis by X-ray diffraction and transmission electron microscopy revealed the presence of stacking faults in MG crystals in a high concentration, which suggests these defects to be responsible for the observed positron lifetime. © 2011 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/134642
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
Funding AgencyGrant Number
Research Grant Council of Hong KongHKU7031/08P
G_HK026/07
German Academic Exchange Service (DAAD)D/08/01769
European Union
Ministry of Science and Art of Saxony (SMWK)
Ministry of Schools, Youths and Sports of the Czech RepublicMSM 0021620834
Funding Information:

Financial support from the Research Grant Council of Hong Kong (HKU7031/08P and G_HK026/07) and German Academic Exchange Service (DAAD; D/08/01769) for cooperation visits between University of Hong Kong and Forschungszentrum Dresden-Rossendorf in 2008/2009 is gratefully acknowledged. A part of the work was performed within the Cluster of Excellence "Structure Design of Novel High Performance Materials via Atomic Design and Defect Engineering (ADDE)" that is financially supported by the European Union and by the Ministry of Science and Art of Saxony (SMWK). The support provided by the Ministry of Schools, Youths and Sports of the Czech Republic through the research plan MSM 0021620834 is also appreciated.

References
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DC FieldValueLanguage
dc.contributor.authorAnwand, Wen_HK
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorGrynszpan, RIen_HK
dc.contributor.authorCowan, TEen_HK
dc.contributor.authorSchulz, Den_HK
dc.contributor.authorKlimm, Den_HK
dc.contributor.authorIek, Jen_HK
dc.contributor.authorKuriplach, Jen_HK
dc.contributor.authorProchzka, Ien_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorDjurii, ABen_HK
dc.contributor.authorKlemm, Ven_HK
dc.contributor.authorSchreiber, Gen_HK
dc.contributor.authorRafaja, Den_HK
dc.date.accessioned2011-07-05T08:03:51Z-
dc.date.available2011-07-05T08:03:51Z-
dc.date.issued2011en_HK
dc.identifier.citationJournal Of Applied Physics, 2011, v. 109 n. 6en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/134642-
dc.description.abstractVarious nominally undoped, hydrothermally or melt grown (MG) ZnO single crystals have been investigated by standard positron lifetime measurements. Furthermore, optical transmission measurements and structural characterizations have been performed; the content of hydrogen in the bound state was determined by nuclear reaction analysis. A positron lifetime of 165-167 ps, measured for a brownish MG ZnO sample containing (0.30 0.03) at.- of bound hydrogen, matches perfectly the value found for colorless MG ZnO crystals. The edge shift, observed in the blue light domain of the optical absorption for the former sample with respect to the latter samples, is estimated to be 0.70 eV, and found equal to a value reported previously. The possible role of zinc interstitials is considered and discussed. Microstructure analysis by X-ray diffraction and transmission electron microscopy revealed the presence of stacking faults in MG crystals in a high concentration, which suggests these defects to be responsible for the observed positron lifetime. © 2011 American Institute of Physics.en_HK
dc.languageeng-
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsCopyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Journal of Applied Physics, 2011, v. 109 n. 6, article no. 063516) and may be found at (http://link.aip.org/link/doi/10.1063/1.3559264).-
dc.subjectCrystal growth from melt-
dc.subjectCrystal microstructure-
dc.subjectII-VI semiconductors-
dc.subjectInterstitials-
dc.subjectLight absorption-
dc.titleCharacterization of microstructural defects in melt grown ZnO single crystalsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=109&issue=6, article no. 063516&spage=&epage=&date=2011&atitle=Characterization+of+microstructural+defects+in+melt+grown+ZnO+single+crystals-
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1063/1.3559264en_HK
dc.identifier.scopuseid_2-s2.0-79953672933en_HK
dc.identifier.hkuros184968-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79953672933&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume109en_HK
dc.identifier.issue6en_HK
dc.identifier.isiWOS:000289149900034-
dc.publisher.placeUnited Statesen_HK
dc.relation.projectIon-implantation of ZnO material: dopant activation and defect characterization-
dc.identifier.scopusauthoridAnwand, W=9432786300en_HK
dc.identifier.scopusauthoridBrauer, G=7101650540en_HK
dc.identifier.scopusauthoridGrynszpan, RI=23008385300en_HK
dc.identifier.scopusauthoridCowan, TE=7004979468en_HK
dc.identifier.scopusauthoridSchulz, D=7201870256en_HK
dc.identifier.scopusauthoridKlimm, D=6604026374en_HK
dc.identifier.scopusauthoridIek, J=37097309100en_HK
dc.identifier.scopusauthoridKuriplach, J=7003293116en_HK
dc.identifier.scopusauthoridProchzka, I=37097780100en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridDjurii, AB=37070408600en_HK
dc.identifier.scopusauthoridKlemm, V=6701475534en_HK
dc.identifier.scopusauthoridSchreiber, G=14033312700en_HK
dc.identifier.scopusauthoridRafaja, D=7005898313en_HK

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