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Article: Arsenic doped p -type zinc oxide films grown by radio frequency magnetron sputtering
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TitleArsenic doped p -type zinc oxide films grown by radio frequency magnetron sputtering
 
AuthorsFan, JC1
Zhu, CY1
Fung, S1
Zhong, YC3
Wong, KS3
Xie, Z2
Brauer, G4
Anwand, W4 4
Skorupa, W4
To, CK1
Yang, B1
Beling, CD1
Ling, CC1
 
KeywordsII-VI Semiconductors
X-ray photoelectron spectra
Secondary ion mass spectra
Photoluminescence
Positron annihilation
 
Issue Date2009
 
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
 
CitationJournal Of Applied Physics, 2009, v. 106 n. 7 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3236578
 
AbstractAs-doped ZnO films were grown by the radio frequency magnetron sputtering method. As the substrate temperature during growth was raised above ∼400°C, the films changed from n type to p type. Hole concentration and mobility of ∼6× 10 17cm -3 and ∼6 cm 2 V -1s -1were achieved. The ZnO films were studied by secondary ion mass spectroscopy, x-ray photoelectron spectroscopy (XPS), low temperature photoluminescence (PL), and positron annihilation spectroscopy (PAS). The results were consistent with the As Zn-2V Zn shallow acceptor model proposed by Limpijumnong [Phys. Rev. Lett. 92, 155504 (2004)]. The results of the XPS, PL, PAS, and thermal studies lead us to suggest a comprehensive picture of the As-related shallow acceptor formation. © 2009 American Institute of Physics.
 
ISSN0021-8979
2012 Impact Factor: 2.21
2012 SCImago Journal Rankings: 0.990
 
DOIhttp://dx.doi.org/10.1063/1.3236578
 
ISI Accession Number IDWOS:000270915600054
Funding AgencyGrant Number
GRF7037/06P
7031/08P
RGC, HKSAR
Germany/Hong Kong ResearchG_HK026/07
DAAD, Germany
Funding Information:

This work was supported by the GRF (Grant Nos. 7037/06P and 7031/08P), RGC, HKSAR, and the Germany/Hong Kong Research (Grant No. G_HK026/07) awarded by RGC, HKSAR, and DAAD, Germany.

 
ReferencesReferences in Scopus
 
GrantsIon-implantation of ZnO material: dopant activation and defect characterization
 
DC FieldValue
dc.contributor.authorFan, JC
 
dc.contributor.authorZhu, CY
 
dc.contributor.authorFung, S
 
dc.contributor.authorZhong, YC
 
dc.contributor.authorWong, KS
 
dc.contributor.authorXie, Z
 
dc.contributor.authorBrauer, G
 
dc.contributor.authorAnwand, W
 
dc.contributor.authorSkorupa, W
 
dc.contributor.authorTo, CK
 
dc.contributor.authorYang, B
 
dc.contributor.authorBeling, CD
 
dc.contributor.authorLing, CC
 
dc.date.accessioned2010-09-06T08:07:16Z
 
dc.date.available2010-09-06T08:07:16Z
 
dc.date.issued2009
 
dc.description.abstractAs-doped ZnO films were grown by the radio frequency magnetron sputtering method. As the substrate temperature during growth was raised above ∼400°C, the films changed from n type to p type. Hole concentration and mobility of ∼6× 10 17cm -3 and ∼6 cm 2 V -1s -1were achieved. The ZnO films were studied by secondary ion mass spectroscopy, x-ray photoelectron spectroscopy (XPS), low temperature photoluminescence (PL), and positron annihilation spectroscopy (PAS). The results were consistent with the As Zn-2V Zn shallow acceptor model proposed by Limpijumnong [Phys. Rev. Lett. 92, 155504 (2004)]. The results of the XPS, PL, PAS, and thermal studies lead us to suggest a comprehensive picture of the As-related shallow acceptor formation. © 2009 American Institute of Physics.
 
dc.description.naturepublished_or_final_version
 
dc.identifier.citationJournal Of Applied Physics, 2009, v. 106 n. 7 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3236578
 
dc.identifier.doihttp://dx.doi.org/10.1063/1.3236578
 
dc.identifier.eissn1089-7550
 
dc.identifier.hkuros167916
 
dc.identifier.isiWOS:000270915600054
Funding AgencyGrant Number
GRF7037/06P
7031/08P
RGC, HKSAR
Germany/Hong Kong ResearchG_HK026/07
DAAD, Germany
Funding Information:

This work was supported by the GRF (Grant Nos. 7037/06P and 7031/08P), RGC, HKSAR, and the Germany/Hong Kong Research (Grant No. G_HK026/07) awarded by RGC, HKSAR, and DAAD, Germany.

 
dc.identifier.issn0021-8979
2012 Impact Factor: 2.21
2012 SCImago Journal Rankings: 0.990
 
dc.identifier.issue7
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-70350118030
 
dc.identifier.urihttp://hdl.handle.net/10722/80513
 
dc.identifier.volume106
 
dc.languageeng
 
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
 
dc.publisher.placeUnited States
 
dc.relation.ispartofJournal of Applied Physics
 
dc.relation.projectIon-implantation of ZnO material: dopant activation and defect characterization
 
dc.relation.referencesReferences in Scopus
 
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.rightsCopyright 2009. American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2009, v. 106 n. 7 article no. 073709 and may be found at http://jap.aip.org/
 
dc.subjectII-VI Semiconductors
 
dc.subjectX-ray photoelectron spectra
 
dc.subjectSecondary ion mass spectra
 
dc.subjectPhotoluminescence
 
dc.subjectPositron annihilation
 
dc.titleArsenic doped p -type zinc oxide films grown by radio frequency magnetron sputtering
 
dc.typeArticle
 
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Author Affiliations
  1. The University of Hong Kong
  2. Hunan University
  3. Hong Kong University of Science and Technology
  4. Forschungszentrum Dresden Rossendorf