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Article: Arsenic doped p -type zinc oxide films grown by radio frequency magnetron sputtering

TitleArsenic doped p -type zinc oxide films grown by radio frequency magnetron sputtering
Authors
KeywordsII-VI Semiconductors
X-ray photoelectron spectra
Secondary ion mass spectra
Photoluminescence
Positron annihilation
Issue Date2009
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2009, v. 106 n. 7 How to Cite?
AbstractAs-doped ZnO films were grown by the radio frequency magnetron sputtering method. As the substrate temperature during growth was raised above ∼400°C, the films changed from n type to p type. Hole concentration and mobility of ∼6× 10 17cm -3 and ∼6 cm 2 V -1s -1were achieved. The ZnO films were studied by secondary ion mass spectroscopy, x-ray photoelectron spectroscopy (XPS), low temperature photoluminescence (PL), and positron annihilation spectroscopy (PAS). The results were consistent with the As Zn-2V Zn shallow acceptor model proposed by Limpijumnong [Phys. Rev. Lett. 92, 155504 (2004)]. The results of the XPS, PL, PAS, and thermal studies lead us to suggest a comprehensive picture of the As-related shallow acceptor formation. © 2009 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/80513
ISSN
2014 Impact Factor: 2.183
ISI Accession Number ID
Funding AgencyGrant Number
GRF7037/06P
7031/08P
RGC, HKSAR
Germany/Hong Kong ResearchG_HK026/07
DAAD, Germany
Funding Information:

This work was supported by the GRF (Grant Nos. 7037/06P and 7031/08P), RGC, HKSAR, and the Germany/Hong Kong Research (Grant No. G_HK026/07) awarded by RGC, HKSAR, and DAAD, Germany.

References
Grants

 

DC FieldValueLanguage
dc.contributor.authorFan, JCen_HK
dc.contributor.authorZhu, CYen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorZhong, YCen_HK
dc.contributor.authorWong, KSen_HK
dc.contributor.authorXie, Zen_HK
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorAnwand, Wen_HK
dc.contributor.authorSkorupa, Wen_HK
dc.contributor.authorTo, CKen_HK
dc.contributor.authorYang, Ben_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorLing, CCen_HK
dc.date.accessioned2010-09-06T08:07:16Z-
dc.date.available2010-09-06T08:07:16Z-
dc.date.issued2009en_HK
dc.identifier.citationJournal Of Applied Physics, 2009, v. 106 n. 7en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80513-
dc.description.abstractAs-doped ZnO films were grown by the radio frequency magnetron sputtering method. As the substrate temperature during growth was raised above ∼400°C, the films changed from n type to p type. Hole concentration and mobility of ∼6× 10 17cm -3 and ∼6 cm 2 V -1s -1were achieved. The ZnO films were studied by secondary ion mass spectroscopy, x-ray photoelectron spectroscopy (XPS), low temperature photoluminescence (PL), and positron annihilation spectroscopy (PAS). The results were consistent with the As Zn-2V Zn shallow acceptor model proposed by Limpijumnong [Phys. Rev. Lett. 92, 155504 (2004)]. The results of the XPS, PL, PAS, and thermal studies lead us to suggest a comprehensive picture of the As-related shallow acceptor formation. © 2009 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsCopyright 2009. American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2009, v. 106 n. 7 article no. 073709 and may be found at http://jap.aip.org/-
dc.subjectII-VI Semiconductors-
dc.subjectX-ray photoelectron spectra-
dc.subjectSecondary ion mass spectra-
dc.subjectPhotoluminescence-
dc.subjectPositron annihilation-
dc.titleArsenic doped p -type zinc oxide films grown by radio frequency magnetron sputteringen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=106&issue=7 article no. 073709&spage=&epage=&date=2009&atitle=Arsenic+doped+p-type+zinc+oxide+films+grown+by+radio+frequency+magnetron+sputteringen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3236578en_HK
dc.identifier.scopuseid_2-s2.0-70350118030en_HK
dc.identifier.hkuros167916en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-70350118030&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume106en_HK
dc.identifier.issue7en_HK
dc.identifier.eissn1089-7550-
dc.identifier.isiWOS:000270915600054-
dc.publisher.placeUnited Statesen_HK
dc.relation.projectIon-implantation of ZnO material: dopant activation and defect characterization-
dc.identifier.scopusauthoridFan, JC=36019048800en_HK
dc.identifier.scopusauthoridZhu, CY=14007977600en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridZhong, YC=8623189300en_HK
dc.identifier.scopusauthoridWong, KS=7404759949en_HK
dc.identifier.scopusauthoridXie, Z=15060759300en_HK
dc.identifier.scopusauthoridBrauer, G=7101650540en_HK
dc.identifier.scopusauthoridAnwand, W=9432786300en_HK
dc.identifier.scopusauthoridSkorupa, W=7102608722en_HK
dc.identifier.scopusauthoridTo, CK=35114056600en_HK
dc.identifier.scopusauthoridYang, B=55416326500en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK

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