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Article: Aluminum-implantation-induced deep levels in n-type 6H–SiC

TitleAluminum-implantation-induced deep levels in n-type 6H–SiC
Authors
KeywordsPhysics engineering
Issue Date1998
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 1998, v. 84 n. 2, p. 1152-1154 How to Cite?
AbstractDeep-level defect centers on the n-side of p+n junction diodes formed by low and elevated temperature aluminum-ion implantation into n-type 6H–SiC have been studied using deep-level transient spectroscopy. Two shallow Al-acceptor levels have been observed in the n region just beyond the implantation depth through their minority-carrier emission signatures. The dominant level is situated at 0.26 eV above the valence band and is accompanied by a shallower level of small intensity. Comparison with photoluminescence results suggests the dominant level (labeled Ak) and the shallower level (labeled Ah), are associated with the cubic and hexagonal lattice sites, respectively. Unlike previously reported results, which show many different implantation-induced donors within the implantation region, only one deep donor level at EC – 0.44 eV is found to occur in the postimplantation region, indicating that the various crystal damage sites occur with different spatial distributions. ©1998 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42187
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorFung, SHYen_HK
dc.contributor.authorGong, Men_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorWirth, Hen_HK
dc.contributor.authorSkorupa, Wen_HK
dc.date.accessioned2007-01-08T02:31:15Z-
dc.date.available2007-01-08T02:31:15Z-
dc.date.issued1998en_HK
dc.identifier.citationJournal of Applied Physics, 1998, v. 84 n. 2, p. 1152-1154en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42187-
dc.description.abstractDeep-level defect centers on the n-side of p+n junction diodes formed by low and elevated temperature aluminum-ion implantation into n-type 6H–SiC have been studied using deep-level transient spectroscopy. Two shallow Al-acceptor levels have been observed in the n region just beyond the implantation depth through their minority-carrier emission signatures. The dominant level is situated at 0.26 eV above the valence band and is accompanied by a shallower level of small intensity. Comparison with photoluminescence results suggests the dominant level (labeled Ak) and the shallower level (labeled Ah), are associated with the cubic and hexagonal lattice sites, respectively. Unlike previously reported results, which show many different implantation-induced donors within the implantation region, only one deep donor level at EC – 0.44 eV is found to occur in the postimplantation region, indicating that the various crystal damage sites occur with different spatial distributions. ©1998 American Institute of Physics.en_HK
dc.format.extent60763 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physics-
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleAluminum-implantation-induced deep levels in n-type 6H–SiCen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=84&issue=2&spage=1152&epage=1154&date=1998&atitle=Aluminum-implantation-induced+deep+levels+in+n-type+6H–SiCen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.368117en_HK
dc.identifier.scopuseid_2-s2.0-0007681887-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0007681887&selection=ref&src=s&origin=recordpage-
dc.identifier.volume84-
dc.identifier.issue2-
dc.identifier.spage1152-
dc.identifier.epage1154-
dc.identifier.isiWOS:000075257800073-
dc.publisher.placeUnited States-
dc.identifier.scopusauthoridFung, S=7201970040-
dc.identifier.scopusauthoridGong, M=9273057400-
dc.identifier.scopusauthoridBeling, CD=7005864180-
dc.identifier.scopusauthoridBrauer, G=7101650540-
dc.identifier.scopusauthoridWirth, H=7103085274-
dc.identifier.scopusauthoridSkorupa, W=7102608722-

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