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Conference Paper: Activities towards p-type doping of ZnO

TitleActivities towards p-type doping of ZnO
Authors
KeywordsFormation process
N-type conductivity
Opto-electronics
P type zno
P-type doping
Issue Date2011
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/EJ/journal/conf
Citation
The 2008 International Workshop on Positron Studies of Defects (PSD 08), Praha, Czech Republic, 1–5 September 2008. In Journal of Physics: Conference Series, 2011, v. 265, article no. 012002 How to Cite?
AbstractZinc oxide (ZnO) is an interesting and promising semiconductor material for many potential applications, e.g. in opto-electronics and for sensor devices. However, its p-type doping represents a challenging problem, and the physical reasons of its mostly n-type conductivity are not perfectly clear at present. Efforts to achieve p-type conductivity by ion implantation are reviewed, and ways to achieve p-type ZnO nanorods and thin films through various growth conditions are summarized. Then, issues associated with the preparation of Schottky contacts is discussed in some detail as this is a requirement of the device formation process. Finally, the possible incorporation of hydrogen and nitrogen into structural defects, which can act as trapping sites for positrons, is discussed in the context of experimental and theoretical positron results and the estimated H and N content in a variety of ZnO materials. © Published under licence by IOP Publishing Ltd.
DescriptionThis journal vol. entitled: International Workshop on Positron Studies of Defects (PSD 08), 1–5 September 2008, Charles University, Faculty of Mathematics and Physics, Praha, Czech Republic
Persistent Identifierhttp://hdl.handle.net/10722/63092
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorKuriplach, Jen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorDjurisic, ABen_HK
dc.date.accessioned2010-07-13T04:15:51Z-
dc.date.available2010-07-13T04:15:51Z-
dc.date.issued2011en_HK
dc.identifier.citationThe 2008 International Workshop on Positron Studies of Defects (PSD 08), Praha, Czech Republic, 1–5 September 2008. In Journal of Physics: Conference Series, 2011, v. 265, article no. 012002en_HK
dc.identifier.urihttp://hdl.handle.net/10722/63092-
dc.descriptionThis journal vol. entitled: International Workshop on Positron Studies of Defects (PSD 08), 1–5 September 2008, Charles University, Faculty of Mathematics and Physics, Praha, Czech Republic-
dc.description.abstractZinc oxide (ZnO) is an interesting and promising semiconductor material for many potential applications, e.g. in opto-electronics and for sensor devices. However, its p-type doping represents a challenging problem, and the physical reasons of its mostly n-type conductivity are not perfectly clear at present. Efforts to achieve p-type conductivity by ion implantation are reviewed, and ways to achieve p-type ZnO nanorods and thin films through various growth conditions are summarized. Then, issues associated with the preparation of Schottky contacts is discussed in some detail as this is a requirement of the device formation process. Finally, the possible incorporation of hydrogen and nitrogen into structural defects, which can act as trapping sites for positrons, is discussed in the context of experimental and theoretical positron results and the estimated H and N content in a variety of ZnO materials. © Published under licence by IOP Publishing Ltd.-
dc.languageengen_HK
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/EJ/journal/conf-
dc.relation.ispartofJournal of Physics: Conference Series-
dc.rightsJournal of Physics: Conference Series. Copyright © Institute of Physics Publishing.-
dc.subjectFormation process-
dc.subjectN-type conductivity-
dc.subjectOpto-electronics-
dc.subjectP type zno-
dc.subjectP-type doping-
dc.titleActivities towards p-type doping of ZnOen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailDjurisic, AB: dalek@hkusua.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityDjurisic, AB=rp00690en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/1742-6596/265/1/012002-
dc.identifier.scopuseid_2-s2.0-79952054333-
dc.identifier.hkuros154216en_HK
dc.identifier.hkuros184598-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79952054333&selection=ref&src=s&origin=recordpage-
dc.identifier.volume265-
dc.identifier.isiWOS:000292036000002-
dc.publisher.placeUnited Kingdom-
dc.identifier.scopusauthoridBrauer, G=7101650540-
dc.identifier.scopusauthoridKuriplach, J=7003293116-
dc.identifier.scopusauthoridLing, CC=13310239300-
dc.identifier.scopusauthoridDjurišić, AB=7004904830-
dc.identifier.citeulike8682947-

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