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Article: Deep level defects in a nitrogen-implanted ZnO homogeneous p-n junction

TitleDeep level defects in a nitrogen-implanted ZnO homogeneous p-n junction
Authors
KeywordsAnnealing
Crystal defects
Crystallography
Deep level transient spectroscopy
Nitrogen
Issue Date2008
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2008, v. 92 n. 22, article no. 222109 How to Cite?
AbstractNitrogen ions were implanted into undoped melt grown ZnO single crystals. A light-emitting p-n junction was subsequently formed by postimplantation annealing in air. Deep level transient spectroscopy was used to investigate deep level defects induced by N+ implantation and the effect of air annealing. The N+ implantation enhanced the electron trap at E C -(0.31±0.01) eV (E3) and introduced another one at E C -(0.95±0.02) eV (D1), which were removed after annealing at 900 and 750 °C, respectively. Another trap D2 (Ea =0.17±0.01 eV) was formed after the 750 °C annealing and persisted at 1200 °C. © 2008 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/80769
ISSN
2017 Impact Factor: 3.495
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorGu, QLen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorAnwand, Wen_HK
dc.contributor.authorSkorupa, Wen_HK
dc.contributor.authorHsu, YFen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorZhu, CYen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorLu, LWen_HK
dc.date.accessioned2010-09-06T08:10:04Z-
dc.date.available2010-09-06T08:10:04Z-
dc.date.issued2008en_HK
dc.identifier.citationApplied Physics Letters, 2008, v. 92 n. 22, article no. 222109-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80769-
dc.description.abstractNitrogen ions were implanted into undoped melt grown ZnO single crystals. A light-emitting p-n junction was subsequently formed by postimplantation annealing in air. Deep level transient spectroscopy was used to investigate deep level defects induced by N+ implantation and the effect of air annealing. The N+ implantation enhanced the electron trap at E C -(0.31±0.01) eV (E3) and introduced another one at E C -(0.95±0.02) eV (D1), which were removed after annealing at 900 and 750 °C, respectively. Another trap D2 (Ea =0.17±0.01 eV) was formed after the 750 °C annealing and persisted at 1200 °C. © 2008 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2008, v. 92 n. 22, article no. 222109 and may be found at https://doi.org/10.1063/1.2940204-
dc.subjectAnnealing-
dc.subjectCrystal defects-
dc.subjectCrystallography-
dc.subjectDeep level transient spectroscopy-
dc.subjectNitrogen-
dc.titleDeep level defects in a nitrogen-implanted ZnO homogeneous p-n junctionen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=92&issue=22, article no. 222109&spage=&epage=&date=2008&atitle=Deep+level+defects+in+a+nitrogen-implanted+ZnO+homogeneous+p-n+junctionen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailLu, LW: liweilu@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityLu, LW=rp00477en_HK
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1063/1.2940204en_HK
dc.identifier.scopuseid_2-s2.0-44849089585en_HK
dc.identifier.hkuros143207en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-44849089585&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume92en_HK
dc.identifier.issue22en_HK
dc.identifier.spagearticle no. 222109-
dc.identifier.epagearticle no. 222109-
dc.identifier.eissn1077-3118-
dc.identifier.isiWOS:000256527900044-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridGu, QL=16067090400en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridBrauer, G=7101650540en_HK
dc.identifier.scopusauthoridAnwand, W=9432786300en_HK
dc.identifier.scopusauthoridSkorupa, W=7102608722en_HK
dc.identifier.scopusauthoridHsu, YF=16063930300en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridZhu, CY=14007977600en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridLu, LW=7403963552en_HK

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