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Article: Deep level defects in a nitrogen-implanted ZnO homogeneous p-n junction

TitleDeep level defects in a nitrogen-implanted ZnO homogeneous p-n junction
Authors
KeywordsAnnealing
Crystal defects
Crystallography
Deep level transient spectroscopy
Nitrogen
Issue Date2008
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2008, v. 92 n. 22 How to Cite?
AbstractNitrogen ions were implanted into undoped melt grown ZnO single crystals. A light-emitting p-n junction was subsequently formed by postimplantation annealing in air. Deep level transient spectroscopy was used to investigate deep level defects induced by N+ implantation and the effect of air annealing. The N+ implantation enhanced the electron trap at E C -(0.31±0.01) eV (E3) and introduced another one at E C -(0.95±0.02) eV (D1), which were removed after annealing at 900 and 750 °C, respectively. Another trap D2 (Ea =0.17±0.01 eV) was formed after the 750 °C annealing and persisted at 1200 °C. © 2008 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/80769
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorGu, QLen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorAnwand, Wen_HK
dc.contributor.authorSkorupa, Wen_HK
dc.contributor.authorHsu, YFen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorZhu, CYen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorLu, LWen_HK
dc.date.accessioned2010-09-06T08:10:04Z-
dc.date.available2010-09-06T08:10:04Z-
dc.date.issued2008en_HK
dc.identifier.citationApplied Physics Letters, 2008, v. 92 n. 22en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80769-
dc.description.abstractNitrogen ions were implanted into undoped melt grown ZnO single crystals. A light-emitting p-n junction was subsequently formed by postimplantation annealing in air. Deep level transient spectroscopy was used to investigate deep level defects induced by N+ implantation and the effect of air annealing. The N+ implantation enhanced the electron trap at E C -(0.31±0.01) eV (E3) and introduced another one at E C -(0.95±0.02) eV (D1), which were removed after annealing at 900 and 750 °C, respectively. Another trap D2 (Ea =0.17±0.01 eV) was formed after the 750 °C annealing and persisted at 1200 °C. © 2008 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectAnnealing-
dc.subjectCrystal defects-
dc.subjectCrystallography-
dc.subjectDeep level transient spectroscopy-
dc.subjectNitrogen-
dc.titleDeep level defects in a nitrogen-implanted ZnO homogeneous p-n junctionen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=92&issue=22, article no. 222109&spage=&epage=&date=2008&atitle=Deep+level+defects+in+a+nitrogen-implanted+ZnO+homogeneous+p-n+junctionen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailLu, LW: liweilu@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityLu, LW=rp00477en_HK
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1063/1.2940204en_HK
dc.identifier.scopuseid_2-s2.0-44849089585en_HK
dc.identifier.hkuros143207en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-44849089585&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume92en_HK
dc.identifier.issue22en_HK
dc.identifier.eissn1077-3118-
dc.identifier.isiWOS:000256527900044-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridGu, QL=16067090400en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridBrauer, G=7101650540en_HK
dc.identifier.scopusauthoridAnwand, W=9432786300en_HK
dc.identifier.scopusauthoridSkorupa, W=7102608722en_HK
dc.identifier.scopusauthoridHsu, YF=16063930300en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridZhu, CY=14007977600en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridLu, LW=7403963552en_HK

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