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Article: Deep level transient spectroscopic study of oxygen implanted melt grown ZnO single crystal

TitleDeep level transient spectroscopic study of oxygen implanted melt grown ZnO single crystal
Authors
KeywordsAnnealing temperatures
Deep level trap
Intrinsic defects
Melt-grown
Oxygen implantation
Issue Date2011
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst
Citation
Semiconductor Science And Technology, 2011, v. 26 n. 9, article no. 095016 How to Cite?
AbstractDeep level traps in melt grown ZnO single crystal created by oxygen implantation and subsequent annealing in air were studied by deep level transient spectroscopy measurement between 80 and 300 K. The E C-0.29 eV trap (E3) was the dominant peak in the as-grown sample and no new defects were created in the as-O-implanted sample. The single peak feature of the deep level transient spectroscopy (DLTS) spectra did not change with the annealing temperature up to 750 °C, but the activation energy decreased to 0.22 eV. This was explained in terms of a thermally induced defect having a peak close to but inseparable from the original 0.29 eV peak. A systematic study on a wide range of the rate window for the DLTS measurement successfully separated the Arrhenius plot data originated from different traps. It was inferred that the E3 concentration in the samples did not change after the O-implantation. The traps at E C-0.11, E C-0.16 and E C-0.58 eV were created after annealing. The E C-0.16 eV trap was assigned to an intrinsic defect. No DLTS signal was found after the sample was annealed to 1200 °C. © 2011 IOP Publishing Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/139657
ISSN
2015 Impact Factor: 2.098
2015 SCImago Journal Rankings: 0.676
ISI Accession Number ID
Funding AgencyGrant Number
Research Grant Council, HKSAR7031/08P
Small Project Grant
The University of Hong Kong
Funding Information:

This work was supported by the GRF (7031/08P) awarded by the Research Grant Council, HKSAR; the Small Project Grant and the University Development Fund awarded by The University of Hong Kong.

References

 

DC FieldValueLanguage
dc.contributor.authorYe, ZRen_HK
dc.contributor.authorLu, XHen_HK
dc.contributor.authorDing, GWen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorAnwand, Wen_HK
dc.date.accessioned2011-09-23T05:52:59Z-
dc.date.available2011-09-23T05:52:59Z-
dc.date.issued2011en_HK
dc.identifier.citationSemiconductor Science And Technology, 2011, v. 26 n. 9, article no. 095016en_HK
dc.identifier.issn0268-1242en_HK
dc.identifier.urihttp://hdl.handle.net/10722/139657-
dc.description.abstractDeep level traps in melt grown ZnO single crystal created by oxygen implantation and subsequent annealing in air were studied by deep level transient spectroscopy measurement between 80 and 300 K. The E C-0.29 eV trap (E3) was the dominant peak in the as-grown sample and no new defects were created in the as-O-implanted sample. The single peak feature of the deep level transient spectroscopy (DLTS) spectra did not change with the annealing temperature up to 750 °C, but the activation energy decreased to 0.22 eV. This was explained in terms of a thermally induced defect having a peak close to but inseparable from the original 0.29 eV peak. A systematic study on a wide range of the rate window for the DLTS measurement successfully separated the Arrhenius plot data originated from different traps. It was inferred that the E3 concentration in the samples did not change after the O-implantation. The traps at E C-0.11, E C-0.16 and E C-0.58 eV were created after annealing. The E C-0.16 eV trap was assigned to an intrinsic defect. No DLTS signal was found after the sample was annealed to 1200 °C. © 2011 IOP Publishing Ltd.en_HK
dc.languageengen_US
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/ssten_HK
dc.relation.ispartofSemiconductor Science and Technologyen_HK
dc.rightsSemiconductor Science and Technology. Copyright © Institute of Physics Publishing.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectAnnealing temperatures-
dc.subjectDeep level trap-
dc.subjectIntrinsic defects-
dc.subjectMelt-grown-
dc.subjectOxygen implantation-
dc.titleDeep level transient spectroscopic study of oxygen implanted melt grown ZnO single crystalen_HK
dc.typeArticleen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturepostprint-
dc.identifier.doi10.1088/0268-1242/26/9/095016en_HK
dc.identifier.scopuseid_2-s2.0-80051977253en_HK
dc.identifier.hkuros195702en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-80051977253&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume26en_HK
dc.identifier.issue9en_HK
dc.identifier.isiWOS:000293904400018-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridYe, ZR=49962492400en_HK
dc.identifier.scopusauthoridLu, XH=7404840069en_HK
dc.identifier.scopusauthoridDing, GW=49961280800en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridBrauer, G=7101650540en_HK
dc.identifier.scopusauthoridAnwand, W=9432786300en_HK
dc.identifier.citeulike9685000-

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