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Conference Paper: Deep level defects E1/E2 in n-type 6H silicon carbide induced by electron radiation and He-implantation

TitleDeep level defects E1/E2 in n-type 6H silicon carbide induced by electron radiation and He-implantation
Authors
KeywordsAtoms
Electrons
Ion implantation
Physics
Spectrum analysis
Issue Date2005
PublisherAmerican Institute of Physics. The Journal's web site is located at http://proceedings.aip.org/
Citation
Physics of Semiconductors, the 27th International Conference on the Physics of Semiconductors, Flagstaff, Arizona, 26-30 July 2004. In AIP Conference Proceedings, 2005, v. 772 n. 1, p. 99-100 How to Cite?
Abstract6H-SiC samples subjected to He-implantation and e--irradiation (Ee=0.2MeV-1.7MeV) were investigated by deep level transient spectroscopy (DLTS). E1/E2 were identified in the He-implanted and the e--irradiated samples with Ee≥0. 3MeV. Considering the minimum e- energy required to displace the atoms in the lattice, the E1/E2 creation was related to the C-atom displacement. Similar to previous reports, the peak intensity and the capture cross sections of E1/E2 anomalously varies from samples to samples. It was shown that these anomalies were due to the presence of a DLTS peak overlapping with the E1/E2 signals. © 2005 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/47046
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorLing, CCen_HK
dc.contributor.authorChen, XDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorAnwand, Wen_HK
dc.contributor.authorSkorupa, Wen_HK
dc.contributor.authorGong, Men_HK
dc.date.accessioned2007-10-30T07:05:13Z-
dc.date.available2007-10-30T07:05:13Z-
dc.date.issued2005en_HK
dc.identifier.citationPhysics of Semiconductors, the 27th International Conference on the Physics of Semiconductors, Flagstaff, Arizona, 26-30 July 2004. In AIP Conference Proceedings, 2005, v. 772 n. 1, p. 99-100-
dc.identifier.issn0094-243Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/47046-
dc.description.abstract6H-SiC samples subjected to He-implantation and e--irradiation (Ee=0.2MeV-1.7MeV) were investigated by deep level transient spectroscopy (DLTS). E1/E2 were identified in the He-implanted and the e--irradiated samples with Ee≥0. 3MeV. Considering the minimum e- energy required to displace the atoms in the lattice, the E1/E2 creation was related to the C-atom displacement. Similar to previous reports, the peak intensity and the capture cross sections of E1/E2 anomalously varies from samples to samples. It was shown that these anomalies were due to the presence of a DLTS peak overlapping with the E1/E2 signals. © 2005 American Institute of Physics.en_HK
dc.format.extent249474 bytes-
dc.format.extent1036577 bytes-
dc.format.extent5932 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://proceedings.aip.org/en_HK
dc.relation.ispartofAIP Conference Proceedingsen_HK
dc.rightsCopyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in AIP Conference Proceedings, 2005, v. 772 n. 1, p. 99-100 and may be found at https://doi.org/10.1063/1.1994012-
dc.subjectAtomsen_HK
dc.subjectElectronsen_HK
dc.subjectIon implantationen_HK
dc.subjectPhysicsen_HK
dc.subjectSpectrum analysisen_HK
dc.titleDeep level defects E1/E2 in n-type 6H silicon carbide induced by electron radiation and He-implantationen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1551-7616&volume=772&issue=1&spage=99&epage=100&date=2005&atitle=Deep+level+defects+E1/E2+in+n-type+6H+silicon+carbide+induced+by+electron+radiation+and+He-implantationen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1994012en_HK
dc.identifier.scopuseid_2-s2.0-33749494035en_HK
dc.identifier.hkuros99264-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33749494035&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume772en_HK
dc.identifier.issue1-
dc.identifier.spage99en_HK
dc.identifier.epage100en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridChen, XD=15031490600en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridBrauer, G=7101650540en_HK
dc.identifier.scopusauthoridAnwand, W=9432786300en_HK
dc.identifier.scopusauthoridSkorupa, W=7102608722en_HK
dc.identifier.scopusauthoridGong, M=9273057400en_HK

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