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Conference Paper: Deep level defects E1/E2 in n-type 6H silicon carbide induced by electron radiation and He-implantation

TitleDeep level defects E1/E2 in n-type 6H silicon carbide induced by electron radiation and He-implantation
Authors
KeywordsAtoms
Electrons
Ion implantation
Physics
Spectrum analysis
Issue Date2005
PublisherAmerican Institute of Physics. The Journal's web site is located at http://proceedings.aip.org/
Citation
Physics of Semiconductors, the 27th International Conference on the Physics of Semiconductors, Flagstaff, Arizona, 26-30 July 2004, v. 772 n. 1, p. 99-100 How to Cite?
Abstract6H-SiC samples subjected to He-implantation and e--irradiation (Ee=0.2MeV-1.7MeV) were investigated by deep level transient spectroscopy (DLTS). E1/E2 were identified in the He-implanted and the e--irradiated samples with Ee≥0. 3MeV. Considering the minimum e- energy required to displace the atoms in the lattice, the E1/E2 creation was related to the C-atom displacement. Similar to previous reports, the peak intensity and the capture cross sections of E1/E2 anomalously varies from samples to samples. It was shown that these anomalies were due to the presence of a DLTS peak overlapping with the E1/E2 signals. © 2005 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/47046
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorLing, CCen_HK
dc.contributor.authorChen, XDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorAnwand, Wen_HK
dc.contributor.authorSkorupa, Wen_HK
dc.contributor.authorGong, Men_HK
dc.date.accessioned2007-10-30T07:05:13Z-
dc.date.available2007-10-30T07:05:13Z-
dc.date.issued2005en_HK
dc.identifier.citationPhysics of Semiconductors, the 27th International Conference on the Physics of Semiconductors, Flagstaff, Arizona, 26-30 July 2004, v. 772 n. 1, p. 99-100en_HK
dc.identifier.issn0094-243Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/47046-
dc.description.abstract6H-SiC samples subjected to He-implantation and e--irradiation (Ee=0.2MeV-1.7MeV) were investigated by deep level transient spectroscopy (DLTS). E1/E2 were identified in the He-implanted and the e--irradiated samples with Ee≥0. 3MeV. Considering the minimum e- energy required to displace the atoms in the lattice, the E1/E2 creation was related to the C-atom displacement. Similar to previous reports, the peak intensity and the capture cross sections of E1/E2 anomalously varies from samples to samples. It was shown that these anomalies were due to the presence of a DLTS peak overlapping with the E1/E2 signals. © 2005 American Institute of Physics.en_HK
dc.format.extent249474 bytes-
dc.format.extent1036577 bytes-
dc.format.extent5932 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://proceedings.aip.org/en_HK
dc.relation.ispartofAIP Conference Proceedingsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectAtomsen_HK
dc.subjectElectronsen_HK
dc.subjectIon implantationen_HK
dc.subjectPhysicsen_HK
dc.subjectSpectrum analysisen_HK
dc.titleDeep level defects E1/E2 in n-type 6H silicon carbide induced by electron radiation and He-implantationen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1551-7616&volume=772&issue=1&spage=99&epage=100&date=2005&atitle=Deep+level+defects+E1/E2+in+n-type+6H+silicon+carbide+induced+by+electron+radiation+and+He-implantationen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1994012en_HK
dc.identifier.scopuseid_2-s2.0-33749494035en_HK
dc.identifier.hkuros99264-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33749494035&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume772en_HK
dc.identifier.spage99en_HK
dc.identifier.epage100en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridChen, XD=15031490600en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridBrauer, G=7101650540en_HK
dc.identifier.scopusauthoridAnwand, W=9432786300en_HK
dc.identifier.scopusauthoridSkorupa, W=7102608722en_HK
dc.identifier.scopusauthoridGong, M=9273057400en_HK

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