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Browsing by Author rp00197
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Showing results 35 to 54 of 109
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Title
Author(s)
Issue Date
Fabrication and electrical characterization of MONOS memory with novel high-κ gate stack
Proceeding/Conference:
2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Liu, L
Xu, JP
Chan, CL
Lai, PT
2009
Gate dielectrics prepared by double nitridation in NO and N2O
Journal:
Applied Physics A: Materials Science and Processing
Xu, JP
Lai, PT
Cheng, YC
2000
Gate Leakage Model of Ge MOS Capacitor with High-k Gate Dielectric
Proceeding/Conference:
Proceedings of 8th ICSICT
Zou, X
Xu, JP
Lai, PT
Li, C
Zhang, XF
2006
Gate leakage properties of MOS devices with tri-layer high-k gate dielectric
Journal:
Microelectronics Reliability
Chen, WB
Xu, JP
Lai, PT
Li, YP
Xu, SG
2007
Gate-leakage model of Ge MOS capacitor with high-k gate dielectric
Proceeding/Conference:
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Zou, X
Xu, JP
Lai, PT
Li, CX
Zhang, XF
2007
Greatly suppressed stress-induced shift of gate-induced drain leakage in N20-based n-MOSFET's
Journal:
Solid-State Electronics
Xu, J
Lai, PT
Huang, L
Lo, SHB
Cheng, YC
1999
Greatly suppressed stress-induced shift of GIDL in N 2O-based n-MOSFET's
Journal:
Solid-State Electronics
Xu, JP
Lai, PT
Huang, L
Lo, HB
Cheng, YC
1998
Impacts of Ti content and annealing temperature on electrical properties of Si MOS capacitors with HfTiON gate dielectric
Proceeding/Conference:
2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Ji, F
Xu, JP
Li, CX
Lai, PT
Chan, CL
2009
Impacts of Ti on electrical properties of Ge metal-oxide-semiconductor capacitors with ultrathin high-κ LaTiON gate dielectric
Journal:
Applied Physics A: Materials Science and Processing
Xu, HX
Xu, JP
Li, CX
Chan, CL
Lai, PT
2010
Improved characteristics for MOHOS memory with oxygen-rich GdO as charge storage layer annealed by NH3
Journal:
Applied Physics A: materials science & processing
Liu, L
Xu, JP
Chen, JX
Lai, PT
2014
Improved charge-trapping properties of HfYON film for nonvolatile memory applications in comparison with HfON and Y 2O 3 films
Journal:
Applied Physics Letters
Huang, XD
Liu, L
Xu, JP
Lai, PT
2011
Improved Charge-Trapping Properties of TiON/HfON Dual Charge Storage Layer by Tapered Band Structure
Journal:
Applied Physics Letters
Liu, L
Xu, J
Chen, JX
Ji, F
Lai, PT
2012
Improved electrical properties of Ge metal-oxide-semiconductor capacitor with HfTa-based gate dielectric by using TaOxNy interlayer
Journal:
Applied Physics Letters
Zhang, XF
Xu, JP
Li, CX
Lai, PT
Chan, CL
Guan, JG
2008
Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high- k HfO 2 gate dielectric by using La 2 O 3 interlayer sputtered with/without N 2 ambient
Journal:
Applied Physics Letters
Xu, HX
Xu, JP
Li, CX
Lai, PT
2010
Improved electrical properties of Ge p-MOSFET with HfO 2 gate dielectric by using TaO xN y interlayer
Journal:
IEEE Electron Device Letters
Xu, JP
Zhang, XF
Li, CX
Lai, PT
Chan, CL
2008
Improved electrical properties of germanium MOS capacitors with gate dielectric grown in wet-NO ambient
Journal:
IEEE Electron Device Letters
Xu, JP
Lai, PT
Li, CX
Zou, X
Chan, CL
2006
Improved electrical properties of HfTiO/GeO x N y gate dielectric Ge MOS capacitors by using wet-NO Ge-surface pretreatment
Journal:
Applied Physics A: Materials Science and Processing
Xu, JP
Zou, X
Li, CX
Lai, PT
Chan, CL
2009
Improved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer
Journal:
Applied Physics Letters
Xu, JP
Ji, F
Li, CX
Lai, PT
Guan, JG
Liu, YR
2007
Improved hydrogen-sensitive properties of MISiC Schottky sensor with thin NO-grown oxynitride as gate insulator
Journal:
IEEE Electron Device Letters
Xu, JP
Lai, PT
Zhong, DG
Chan, CL
2003
Improved interface properties of p-type 6H–SiC/SiO2 system by NH3 pretreatment
Journal:
Applied Physics Letters
Xu, JP
Lai, PT
Chan, CL
Cheng, YC
2000