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Article: Improved Charge-Trapping Properties of TiON/HfON Dual Charge Storage Layer by Tapered Band Structure

TitleImproved Charge-Trapping Properties of TiON/HfON Dual Charge Storage Layer by Tapered Band Structure
Authors
Issue Date2012
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2012, v. 101 n. 13, article no. 133503 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/191387
ISSN
2017 Impact Factor: 3.495
2015 SCImago Journal Rankings: 1.105

 

DC FieldValueLanguage
dc.contributor.authorLiu, Len_US
dc.contributor.authorXu, Jen_US
dc.contributor.authorChen, JXen_US
dc.contributor.authorJi, Fen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2013-10-15T06:55:35Z-
dc.date.available2013-10-15T06:55:35Z-
dc.date.issued2012en_US
dc.identifier.citationApplied Physics Letters, 2012, v. 101 n. 13, article no. 133503-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/191387-
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/-
dc.relation.ispartofApplied Physics Lettersen_US
dc.rightsCopyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2012, v. 101 n. 13, article no. 133503 and may be found at https://doi.org/10.1063/1.4754830-
dc.titleImproved Charge-Trapping Properties of TiON/HfON Dual Charge Storage Layer by Tapered Band Structureen_US
dc.typeArticleen_US
dc.identifier.emailLiu, L: lusally@hku.hken_US
dc.identifier.emailXu, J: jpxu@eee.hku.hken_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityXu, J=rp00197en_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4754830-
dc.identifier.scopuseid_2-s2.0-84872058911-
dc.identifier.hkuros225985en_US
dc.identifier.volume101en_US
dc.identifier.issue13-
dc.identifier.spagearticle no. 133503-
dc.identifier.epagearticle no. 133503-

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