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Article: Greatly suppressed stress-induced shift of gate-induced drain leakage in N20-based n-MOSFET's

TitleGreatly suppressed stress-induced shift of gate-induced drain leakage in N20-based n-MOSFET's
Authors
Issue Date1999
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Greatly suppressed stress-induced shift of gate-induced drain leakage in N20-based n-MOSFET's. In Solid-State Electronics, p. 1665-1669. United Kingdom: Pergamon, 1998 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/118372
ISSN
2015 Impact Factor: 1.345
2015 SCImago Journal Rankings: 0.675

 

DC FieldValueLanguage
dc.contributor.authorXu, Jen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorHuang, Len_HK
dc.contributor.authorLo, SHBen_HK
dc.contributor.authorCheng, YCen_HK
dc.date.accessioned2010-09-26T08:02:19Z-
dc.date.available2010-09-26T08:02:19Z-
dc.date.issued1999en_HK
dc.identifier.citationGreatly suppressed stress-induced shift of gate-induced drain leakage in N20-based n-MOSFET's. In Solid-State Electronics, p. 1665-1669. United Kingdom: Pergamon, 1998en_HK
dc.identifier.issn0038-1101en_HK
dc.identifier.urihttp://hdl.handle.net/10722/118372-
dc.languageengen_HK
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_HK
dc.relation.ispartofSolid-State Electronicsen_HK
dc.titleGreatly suppressed stress-induced shift of gate-induced drain leakage in N20-based n-MOSFET'sen_HK
dc.typeArticle-
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0038-1101&volume=&spage=1665&epage=1669&date=1998&atitle=Greatly+suppressed+stress-induced+shift+of+gate-induced+drain+leakage+in+N20-based+n-MOSFET%27sen_HK
dc.identifier.emailXu, J: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.emailLo, SHB: hblo@hkueee.hku.hken_HK
dc.identifier.emailCheng, YC: yccheng@hkucc.hku.hken_HK
dc.identifier.authorityXu, J=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.hkuros44735en_HK
dc.identifier.spage1665en_HK
dc.identifier.epage1669en_HK

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