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Article: Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high- k HfO 2 gate dielectric by using La 2 O 3 interlayer sputtered with/without N 2 ambient

TitleImproved electrical properties of Ge metal-oxide-semiconductor capacitors with high- k HfO 2 gate dielectric by using La 2 O 3 interlayer sputtered with/without N 2 ambient
Authors
Issue Date2010
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2010, v. 97 n. 2 How to Cite?
AbstractThe electrical properties of n-Ge metal-oxide-semiconductor (MOS) capacitors with HfO 2 /LaON or HfO 2 / La 2 O 3 stacked gate dielectric (LaON or La 2 O 3 as interlayer) are investigated. It is found that better electrical performances, including lower interface-state density, smaller gate leakage current, smaller capacitance equivalent thickness, larger k value, and negligible C-V frequency dispersion, can be achieved for the MOS device with LaON interlayer. The involved mechanism lies in that the LaON interlayer can effectively block the interdiffusions of Ge, O, and Hf, thus suppressing the growth of unstable GeO x interlayer and improving the dielectric/Ge interface quality. © 2010 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/155576
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
Funding AgencyGrant Number
National Natural Science Foundation of China60776016
RGC of HKSAR, ChinaHKU 713308E
University of Hong Kong200707176147
00600009
Funding Information:

This work is financially supported by the National Natural Science Foundation of China (Grant no. 60776016), the RGC of HKSAR, China (Project No. HKU 713308E), the Small Project Funding of the University of Hong Kong (Project No. 200707176147), and the University Development Fund (Nanotechnology Research Institute, Grant No. 00600009) of the University of Hong Kong.

References
Grants

 

DC FieldValueLanguage
dc.contributor.authorXu, HXen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLi, CXen_HK
dc.contributor.authorLai, PTen_HK
dc.date.accessioned2012-08-08T08:34:10Z-
dc.date.available2012-08-08T08:34:10Z-
dc.date.issued2010en_HK
dc.identifier.citationApplied Physics Letters, 2010, v. 97 n. 2en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/155576-
dc.description.abstractThe electrical properties of n-Ge metal-oxide-semiconductor (MOS) capacitors with HfO 2 /LaON or HfO 2 / La 2 O 3 stacked gate dielectric (LaON or La 2 O 3 as interlayer) are investigated. It is found that better electrical performances, including lower interface-state density, smaller gate leakage current, smaller capacitance equivalent thickness, larger k value, and negligible C-V frequency dispersion, can be achieved for the MOS device with LaON interlayer. The involved mechanism lies in that the LaON interlayer can effectively block the interdiffusions of Ge, O, and Hf, thus suppressing the growth of unstable GeO x interlayer and improving the dielectric/Ge interface quality. © 2010 American Institute of Physics.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.titleImproved electrical properties of Ge metal-oxide-semiconductor capacitors with high- k HfO 2 gate dielectric by using La 2 O 3 interlayer sputtered with/without N 2 ambienten_HK
dc.typeArticleen_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.3462301en_HK
dc.identifier.scopuseid_2-s2.0-77955150885en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77955150885&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume97en_HK
dc.identifier.issue2en_HK
dc.identifier.isiWOS:000279999800050-
dc.publisher.placeUnited Statesen_HK
dc.relation.projectHigh-k Gate Dielectrics for High-Performance Germanium MISFET's-
dc.identifier.scopusauthoridXu, HX=25639287800en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridLi, CX=22034888200en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK

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