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Article: Greatly suppressed stress-induced shift of GIDL in N 2O-based n-MOSFET's

TitleGreatly suppressed stress-induced shift of GIDL in N 2O-based n-MOSFET's
Authors
Issue Date1998
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid-State Electronics, 1998, v. 42 n. 9, p. 1665-1669 How to Cite?
AbstractConsiderably suppressed gate-induced drain leakage (GIDL) shifts of N 2O-based n-MOSFET's after hot-carrier stress with different gate voltages are observed. The mechanisms involved are studied by dividing gate-oxide traps into sub-interface and bulk-oxide traps, and by means of computer simulations on electric-field distribution and carrier filling of these traps. It is demonstrated that sub-interface and bulk-oxide hole detrapping during stressing are mainly responsible for the respective GIDL shifts under two different stress conditions of V G = 0.5V D and V G = V D, with the effect of the former larger than the latter. In view of this, it is proposed that MOSFET's with N 2O-nitrided or especially N 2O-annealed NH 3-nitrided gate oxide have not only fewer pre-existing sub-interface and bulk-oxide hole traps, but also greatly suppressed generation of hole and neutral electron traps due to the formation of a nitrogen-rich layer near the SiO 2/Si interface through N 2O treatment. © 1998 Published by Elsevier Science Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/155080
ISSN
2015 Impact Factor: 1.345
2015 SCImago Journal Rankings: 0.675
References

 

DC FieldValueLanguage
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorHuang, Len_HK
dc.contributor.authorLo, HBen_HK
dc.contributor.authorCheng, YCen_HK
dc.date.accessioned2012-08-08T08:31:47Z-
dc.date.available2012-08-08T08:31:47Z-
dc.date.issued1998en_HK
dc.identifier.citationSolid-State Electronics, 1998, v. 42 n. 9, p. 1665-1669en_HK
dc.identifier.issn0038-1101en_HK
dc.identifier.urihttp://hdl.handle.net/10722/155080-
dc.description.abstractConsiderably suppressed gate-induced drain leakage (GIDL) shifts of N 2O-based n-MOSFET's after hot-carrier stress with different gate voltages are observed. The mechanisms involved are studied by dividing gate-oxide traps into sub-interface and bulk-oxide traps, and by means of computer simulations on electric-field distribution and carrier filling of these traps. It is demonstrated that sub-interface and bulk-oxide hole detrapping during stressing are mainly responsible for the respective GIDL shifts under two different stress conditions of V G = 0.5V D and V G = V D, with the effect of the former larger than the latter. In view of this, it is proposed that MOSFET's with N 2O-nitrided or especially N 2O-annealed NH 3-nitrided gate oxide have not only fewer pre-existing sub-interface and bulk-oxide hole traps, but also greatly suppressed generation of hole and neutral electron traps due to the formation of a nitrogen-rich layer near the SiO 2/Si interface through N 2O treatment. © 1998 Published by Elsevier Science Ltd. All rights reserved.en_HK
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_HK
dc.relation.ispartofSolid-State Electronicsen_HK
dc.titleGreatly suppressed stress-induced shift of GIDL in N 2O-based n-MOSFET'sen_HK
dc.typeArticleen_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0032166726en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0032166726&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume42en_HK
dc.identifier.issue9en_HK
dc.identifier.spage1665en_HK
dc.identifier.epage1669en_HK
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridHuang, L=35205328500en_HK
dc.identifier.scopusauthoridLo, HB=7202085394en_HK
dc.identifier.scopusauthoridCheng, YC=27167728600en_HK

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