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- Publisher Website: 10.1109/EDSSC.2009.5394278
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Conference Paper: Impacts of Ti content and annealing temperature on electrical properties of Si MOS capacitors with HfTiON gate dielectric
Title | Impacts of Ti content and annealing temperature on electrical properties of Si MOS capacitors with HfTiON gate dielectric |
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Authors | |
Keywords | HfTiON High-k dielectric MOS capacitor |
Issue Date | 2009 |
Publisher | IEEE. |
Citation | 2009 Ieee International Conference On Electron Devices And Solid-State Circuits, Edssc 2009, 2009, p. 221-224 How to Cite? |
Abstract | HfTiON gate dielectric is fabricated by reactive co-sputtering method followed by annealing in N 2 ambient. The effects of Ti content and annealing temperature on the performances of HfTiON gate-dielectric Si MOS devices are investigated. Experimental results indicate that gate capacitance is increased with increasing Ti content. However, when the Ti/Hf ratio exceeds -1.75, increase of the gate capacitance becomes small. Surface roughness of the samples annealed at different temperatures is analyzed by AFM, and results show that high annealing temperature (e.g. 700 °C for 30 s) can produce smooth surface, thus resulting in low gate leakage current. ©2009 IEEE. |
Description | Proceedings of the IEEE International Conference of Electron Devices and Solid-State Circuits, 2009, p. 221-224 |
Persistent Identifier | http://hdl.handle.net/10722/126194 |
ISBN | |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Ji, F | en_HK |
dc.contributor.author | Xu, JP | en_HK |
dc.contributor.author | Li, CX | en_HK |
dc.contributor.author | Lai, PT | en_HK |
dc.contributor.author | Chan, CL | en_HK |
dc.date.accessioned | 2010-10-31T12:14:54Z | - |
dc.date.available | 2010-10-31T12:14:54Z | - |
dc.date.issued | 2009 | en_HK |
dc.identifier.citation | 2009 Ieee International Conference On Electron Devices And Solid-State Circuits, Edssc 2009, 2009, p. 221-224 | en_HK |
dc.identifier.isbn | 978-1-4244-4297-3 | - |
dc.identifier.uri | http://hdl.handle.net/10722/126194 | - |
dc.description | Proceedings of the IEEE International Conference of Electron Devices and Solid-State Circuits, 2009, p. 221-224 | - |
dc.description.abstract | HfTiON gate dielectric is fabricated by reactive co-sputtering method followed by annealing in N 2 ambient. The effects of Ti content and annealing temperature on the performances of HfTiON gate-dielectric Si MOS devices are investigated. Experimental results indicate that gate capacitance is increased with increasing Ti content. However, when the Ti/Hf ratio exceeds -1.75, increase of the gate capacitance becomes small. Surface roughness of the samples annealed at different temperatures is analyzed by AFM, and results show that high annealing temperature (e.g. 700 °C for 30 s) can produce smooth surface, thus resulting in low gate leakage current. ©2009 IEEE. | en_HK |
dc.language | eng | en_HK |
dc.publisher | IEEE. | - |
dc.relation.ispartof | 2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009 | en_HK |
dc.rights | ©2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. | - |
dc.subject | HfTiON | en_HK |
dc.subject | High-k dielectric | en_HK |
dc.subject | MOS capacitor | en_HK |
dc.title | Impacts of Ti content and annealing temperature on electrical properties of Si MOS capacitors with HfTiON gate dielectric | en_HK |
dc.type | Conference_Paper | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=978-1-4244-4297-3&volume=&spage=221&epage=224&date=2009&atitle=Impacts+of+Ti+content+and+annealing+temperature+on+electrical+properties+of+Si+MOS+capacitors+with+HfTiON+gate+dielectric | - |
dc.identifier.email | Xu, JP: jpxu@eee.hku.hk | en_HK |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | en_HK |
dc.identifier.authority | Xu, JP=rp00197 | en_HK |
dc.identifier.authority | Lai, PT=rp00130 | en_HK |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1109/EDSSC.2009.5394278 | en_HK |
dc.identifier.scopus | eid_2-s2.0-77949625616 | en_HK |
dc.identifier.hkuros | 180055 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-77949625616&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.spage | 221 | en_HK |
dc.identifier.epage | 224 | en_HK |
dc.identifier.isi | WOS:000289818000056 | - |
dc.identifier.scopusauthorid | Ji, F=8238553900 | en_HK |
dc.identifier.scopusauthorid | Xu, JP=7407004696 | en_HK |
dc.identifier.scopusauthorid | Li, CX=22034888200 | en_HK |
dc.identifier.scopusauthorid | Lai, PT=7202946460 | en_HK |
dc.identifier.scopusauthorid | Chan, CL=8507083700 | en_HK |