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Article: Improved electrical properties of Ge metal-oxide-semiconductor capacitor with HfTa-based gate dielectric by using TaOxNy interlayer

TitleImproved electrical properties of Ge metal-oxide-semiconductor capacitor with HfTa-based gate dielectric by using TaOxNy interlayer
Authors
Issue Date2008
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2008, v. 92 n. 26 How to Cite?
AbstractHfTa-based oxide and oxynitride with or without Ta Ox Ny interlayer are fabricated on Ge substrate to form metal-oxide-semiconductor (MOS) capacitors. Their electrical properties and reliabilities are measured and compared. The results show that the MOS capacitor with a gate stack of HfTa-based oxynitride and thin Ta Ox Ny interlayer exhibits low interface-state/oxide-charge densities, low gate leakage, small hysteresis, small capacitance equivalent thickness (∼0.94 nm), and high dielectric constant (∼24). All these should be attributed to the blocking role of the Ta Ox Ny interlayer against penetration of O into the Ge substrate and interdiffusions of Hf, Ge, and Ta, thus effectively suppressing the formation of unstable low- k Ge Ox and giving a superior Ta Ox Ny Ge interface. Moreover, incorporation of N into both the interlayer and high- k dielectric greatly improves device reliability through the formation of strong N-related bonds. © 2008 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/58775
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorZhang, XFen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLi, CXen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorChan, CLen_HK
dc.contributor.authorGuan, JGen_HK
dc.date.accessioned2010-05-31T03:36:42Z-
dc.date.available2010-05-31T03:36:42Z-
dc.date.issued2008en_HK
dc.identifier.citationApplied Physics Letters, 2008, v. 92 n. 26en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/58775-
dc.description.abstractHfTa-based oxide and oxynitride with or without Ta Ox Ny interlayer are fabricated on Ge substrate to form metal-oxide-semiconductor (MOS) capacitors. Their electrical properties and reliabilities are measured and compared. The results show that the MOS capacitor with a gate stack of HfTa-based oxynitride and thin Ta Ox Ny interlayer exhibits low interface-state/oxide-charge densities, low gate leakage, small hysteresis, small capacitance equivalent thickness (∼0.94 nm), and high dielectric constant (∼24). All these should be attributed to the blocking role of the Ta Ox Ny interlayer against penetration of O into the Ge substrate and interdiffusions of Hf, Ge, and Ta, thus effectively suppressing the formation of unstable low- k Ge Ox and giving a superior Ta Ox Ny Ge interface. Moreover, incorporation of N into both the interlayer and high- k dielectric greatly improves device reliability through the formation of strong N-related bonds. © 2008 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsCopyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2008, v. 92 article no. 262902 and may be found at http://apl.aip.org/resource/1/applab/v92/i26/p262902_s1-
dc.titleImproved electrical properties of Ge metal-oxide-semiconductor capacitor with HfTa-based gate dielectric by using TaOxNy interlayeren_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=92 article no. 262902&spage=&epage=&date=2008&atitle=Improved+electrical+properties+of+Ge+metal-oxide-semiconductor+capacitor+with+HfTa-based+gate+dielectric+by+using+TaOxNy+interlayeren_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.2954012en_HK
dc.identifier.scopuseid_2-s2.0-46649092747en_HK
dc.identifier.hkuros164205en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-46649092747&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume92en_HK
dc.identifier.issue26en_HK
dc.identifier.isiWOS:000257424500052-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridZhang, XF=14627948200en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridLi, CX=22034888200en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridChan, CL=8507083700en_HK
dc.identifier.scopusauthoridGuan, JG=7201449685en_HK

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