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Article: Improved electrical properties of germanium MOS capacitors with gate dielectric grown in wet-NO ambient

TitleImproved electrical properties of germanium MOS capacitors with gate dielectric grown in wet-NO ambient
Authors
Xu, JPLai, PTLi, CXZou, XChan, CL
KeywordsGe MOS capacitors
GeOx interlayer
GeON
Wet-NO oxidation
Issue Date2006
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55
Citation
Ieee Electron Device Letters, 2006, v. 27 n. 6, p. 439-441 How to Cite?
DOI: http://dx.doi.org/10.1109/LED.2006.874124
AbstractWet-NO oxidation with or without wet NH3 pretreatment is used to grow GeON gate dielectric on Ge substrate. As compared to dry NO oxidation, negligible growth of GeOx interlayer and, thus, a near-perfect GeON dielectric can be obtained by the wet-NO oxidation. As a result, MOS capacitors prepared by this method show greatly reduced interface-state and oxide-charge densities and gate-leakage current. This should be attributed to the hydrolyzable property of GeOx in water-containing atmosphere. © 2006 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/44752
ISSN
0741-3106
2023 Impact Factor: 4.1
2023 SCImago Journal Rankings: 1.250
ISI Accession Number ID
WOS:000238070500005
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorLi, CXen_HK
dc.contributor.authorZou, Xen_HK
dc.contributor.authorChan, CLen_HK
dc.date.accessioned2007-10-30T06:09:26Z-
dc.date.available2007-10-30T06:09:26Z-
dc.date.issued2006en_HK
dc.identifier.citationIeee Electron Device Letters, 2006, v. 27 n. 6, p. 439-441en_HK
dc.identifier.issn0741-3106en_HK
dc.identifier.urihttp://hdl.handle.net/10722/44752-
dc.description.abstractWet-NO oxidation with or without wet NH3 pretreatment is used to grow GeON gate dielectric on Ge substrate. As compared to dry NO oxidation, negligible growth of GeOx interlayer and, thus, a near-perfect GeON dielectric can be obtained by the wet-NO oxidation. As a result, MOS capacitors prepared by this method show greatly reduced interface-state and oxide-charge densities and gate-leakage current. This should be attributed to the hydrolyzable property of GeOx in water-containing atmosphere. © 2006 IEEE.en_HK
dc.format.extent113076 bytes-
dc.format.extent2174 bytes-
dc.format.extent6324 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55en_HK
dc.relation.ispartofIEEE Electron Device Lettersen_HK
dc.rights©2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectGe MOS capacitorsen_HK
dc.subjectGeOx interlayeren_HK
dc.subjectGeONen_HK
dc.subjectWet-NO oxidationen_HK
dc.titleImproved electrical properties of germanium MOS capacitors with gate dielectric grown in wet-NO ambienten_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0741-3106&volume=27&issue=6&spage=439&epage=441&date=2006&atitle=Improved+electrical+properties+of+Germanium+MOS+capacitors+with+gate+dielectric+grown+in+wet-NO+ambienten_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/LED.2006.874124en_HK
dc.identifier.scopuseid_2-s2.0-33744774148en_HK
dc.identifier.hkuros120768-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33744774148&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume27en_HK
dc.identifier.issue6en_HK
dc.identifier.spage439en_HK
dc.identifier.epage441en_HK
dc.identifier.isiWOS:000238070500005-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridLi, CX=22034888200en_HK
dc.identifier.scopusauthoridZou, X=23020170400en_HK
dc.identifier.scopusauthoridChan, CL=8507083700en_HK
dc.identifier.issnl0741-3106-

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