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Article: Improved hydrogen-sensitive properties of MISiC Schottky sensor with thin NO-grown oxynitride as gate insulator

TitleImproved hydrogen-sensitive properties of MISiC Schottky sensor with thin NO-grown oxynitride as gate insulator
Authors
Xu, JPLai, PTZhong, DGChan, CL
KeywordsHydrogen sensors
NO
Oxynitride
Silicon carbide
Issue Date2003
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55
Citation
Ieee Electron Device Letters, 2003, v. 24 n. 1, p. 13-15 How to Cite?
DOI: http://dx.doi.org/10.1109/LED.2002.807526
AbstractThin oxynitride grown in NO at low temperature was successfully used as gate insulator for fabricating MISiC Schottky hydrogen sensors. Response properties of the sensors were compared with other MISiC Schottky sensors with thicker or no oxynitride. It was found that the thin oxynitride played an important role in increasing device sensitivity and stability. Even at a low H 2 concentration, e.g., 100-ppm H 2 in N 2, a significant response was observed, indicating a promising application for detecting hydrogen leakage. Moreover, a rapid and stable dynamic response on the introduction and removal of H 2/N 2 mixed gas was realized for the sensor. Improved interface properties and larger barrier height associated with the thin oxynitride are responsible for the excellent response characteristics. As a result, NO oxidation could be a superior process for preparing highly sensitive and highly reliable MISiC Schottky hydrogen sensors.
Persistent Identifierhttp://hdl.handle.net/10722/42933
ISSN
0741-3106
2023 Impact Factor: 4.1
2023 SCImago Journal Rankings: 1.250
ISI Accession Number ID
WOS:000181528700005
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorZhong, DGen_HK
dc.contributor.authorChan, CLen_HK
dc.date.accessioned2007-03-23T04:34:59Z-
dc.date.available2007-03-23T04:34:59Z-
dc.date.issued2003en_HK
dc.identifier.citationIeee Electron Device Letters, 2003, v. 24 n. 1, p. 13-15en_HK
dc.identifier.issn0741-3106en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42933-
dc.description.abstractThin oxynitride grown in NO at low temperature was successfully used as gate insulator for fabricating MISiC Schottky hydrogen sensors. Response properties of the sensors were compared with other MISiC Schottky sensors with thicker or no oxynitride. It was found that the thin oxynitride played an important role in increasing device sensitivity and stability. Even at a low H 2 concentration, e.g., 100-ppm H 2 in N 2, a significant response was observed, indicating a promising application for detecting hydrogen leakage. Moreover, a rapid and stable dynamic response on the introduction and removal of H 2/N 2 mixed gas was realized for the sensor. Improved interface properties and larger barrier height associated with the thin oxynitride are responsible for the excellent response characteristics. As a result, NO oxidation could be a superior process for preparing highly sensitive and highly reliable MISiC Schottky hydrogen sensors.en_HK
dc.format.extent205093 bytes-
dc.format.extent27648 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55en_HK
dc.relation.ispartofIEEE Electron Device Lettersen_HK
dc.rights©2003 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectHydrogen sensorsen_HK
dc.subjectNOen_HK
dc.subjectOxynitrideen_HK
dc.subjectSilicon carbideen_HK
dc.titleImproved hydrogen-sensitive properties of MISiC Schottky sensor with thin NO-grown oxynitride as gate insulatoren_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0741-3106&volume=24&issue=1&spage=13&epage=15&date=2003&atitle=Improved+hydrogen-sensitive+properties+of+MISiC+Schottky+sensor+with+thin+NO-grown+oxynitride+as+gate+insulatoren_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/LED.2002.807526en_HK
dc.identifier.scopuseid_2-s2.0-0037249878en_HK
dc.identifier.hkuros81768-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0037249878&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume24en_HK
dc.identifier.issue1en_HK
dc.identifier.spage13en_HK
dc.identifier.epage15en_HK
dc.identifier.isiWOS:000181528700005-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridZhong, DG=23394223100en_HK
dc.identifier.scopusauthoridChan, CL=8507083700en_HK
dc.identifier.issnl0741-3106-

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