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Article: Improved electrical properties of Ge p-MOSFET with HfO 2 gate dielectric by using TaO xN y interlayer

TitleImproved electrical properties of Ge p-MOSFET with HfO 2 gate dielectric by using TaO xN y interlayer
Authors
KeywordsGermanium
High-k
pMOSFET
TaON interlayer
Issue Date2008
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55
Citation
Ieee Electron Device Letters, 2008, v. 29 n. 10, p. 1155-1158 How to Cite?
AbstractThe electrical characteristics of germanium p-metal-oxide-semiconductor (p-MOS) capacitor and p-MOS field-effect transistor (FET) with a stack gate dielectric of HfO 2TaO xN y are investigated. Experimental results show that MOS devices exhibit much lower gate leakage current than MOS devices with only HfO 2 as gate dielectric, good interface properties, good transistor characteristics, and about 1.7-fold hole-mobility enhancement as compared with conventional Si p-MOSFETs. These demonstrate that forming an ultrathin passivation layer of TaO xN y on germanium surface prior to deposition of high- k dielectrics can effectively suppress the growth of unstable GeO x, thus reducing interface states and increasing carrier mobility in the inversion channel of Ge-based transistors. © 2008 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/58727
ISSN
2015 Impact Factor: 2.528
2015 SCImago Journal Rankings: 1.791
ISI Accession Number ID
Funding AgencyGrant Number
National Natural Science Foundation of China60776016
University of Hong Kong200707176147
00600009
Funding Information:

Manuscript received June 26, 2008. Current version published September 24, 2008. This work was supported in part by the National Natural Science Foundation of China under Grant 60776016 and in part by the Small Project Funding of the University of Hong Kong under Project 200707176147, and the University Development Fund (Nanotechnology Research Institute) of the University of Hong Kong under Grant 00600009. The review of this letter was arranged by Editor M. Ostling.

References

 

DC FieldValueLanguage
dc.contributor.authorXu, JPen_HK
dc.contributor.authorZhang, XFen_HK
dc.contributor.authorLi, CXen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorChan, CLen_HK
dc.date.accessioned2010-05-31T03:35:51Z-
dc.date.available2010-05-31T03:35:51Z-
dc.date.issued2008en_HK
dc.identifier.citationIeee Electron Device Letters, 2008, v. 29 n. 10, p. 1155-1158en_HK
dc.identifier.issn0741-3106en_HK
dc.identifier.urihttp://hdl.handle.net/10722/58727-
dc.description.abstractThe electrical characteristics of germanium p-metal-oxide-semiconductor (p-MOS) capacitor and p-MOS field-effect transistor (FET) with a stack gate dielectric of HfO 2TaO xN y are investigated. Experimental results show that MOS devices exhibit much lower gate leakage current than MOS devices with only HfO 2 as gate dielectric, good interface properties, good transistor characteristics, and about 1.7-fold hole-mobility enhancement as compared with conventional Si p-MOSFETs. These demonstrate that forming an ultrathin passivation layer of TaO xN y on germanium surface prior to deposition of high- k dielectrics can effectively suppress the growth of unstable GeO x, thus reducing interface states and increasing carrier mobility in the inversion channel of Ge-based transistors. © 2008 IEEE.en_HK
dc.languageengen_HK
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55en_HK
dc.relation.ispartofIEEE Electron Device Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsIEEE Electron Device Letters. Copyright © IEEE.-
dc.rights©2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectGermaniumen_HK
dc.subjectHigh-ken_HK
dc.subjectpMOSFETen_HK
dc.subjectTaON interlayeren_HK
dc.titleImproved electrical properties of Ge p-MOSFET with HfO 2 gate dielectric by using TaO xN y interlayeren_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0741-3106&volume=29&issue=10&spage=1155&epage=1158&date=2008&atitle=Improved+electrical+properties+of+Ge+p-MOSFET+with+HfO2+gate+dielectric+by+using+TaOxNy+interlayeren_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/LED.2008.2004282en_HK
dc.identifier.scopuseid_2-s2.0-54849362600en_HK
dc.identifier.hkuros164238en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-54849362600&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume29en_HK
dc.identifier.issue10en_HK
dc.identifier.spage1155en_HK
dc.identifier.epage1158en_HK
dc.identifier.isiWOS:000259812900022-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridZhang, XF=14627948200en_HK
dc.identifier.scopusauthoridLi, CX=22034888200en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridChan, CL=8507083700en_HK

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