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Article: Impacts of Ti on electrical properties of Ge metal-oxide-semiconductor capacitors with ultrathin high-κ LaTiON gate dielectric

TitleImpacts of Ti on electrical properties of Ge metal-oxide-semiconductor capacitors with ultrathin high-κ LaTiON gate dielectric
Authors
KeywordsDielectric permittivities
Electrical property
Gate voltages
Gate-leakage
Gate-leakage current
Issue Date2010
PublisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
Citation
Applied Physics A: Materials Science And Processing, 2010, v. 99 n. 4, p. 903-906 How to Cite?
AbstractGe Metal-Oxide-Semiconductor (MOS) capacitors with LaON gate dielectric incorporating different Ti contents are fabricated and their electrical properties are measured and compared. It is found that Ti incorporation can increase the dielectric permittivity, and the higher the Ti content, the larger is the permittivity. However, the interfacial and gate-leakage properties become poorer as the Ti content increases. Therefore, optimization of Ti content is important in order to obtain a good trade-off among the electrical properties of the device. For the studied range of the Ti/La 2O 3 ratio, a suitable Ti/La 2O 3 ratio of 14.7% results in a high relative permittivity of 24.6, low interfacestate density of 3.1 × 10 11 eV -1 cm -2, and relatively low gate-leakage current density of 2.0×10 -3 Acm -2 at a gate voltage of 1 V. © The Author(s) 2010.
Persistent Identifierhttp://hdl.handle.net/10722/145007
ISSN
2015 Impact Factor: 1.444
2015 SCImago Journal Rankings: 0.535
ISI Accession Number ID
Funding AgencyGrant Number
National Natural Science Foundation of China60776016
RGC of HKSAR, ChinaHKU 713308E
Nanotechnology Research Institute, University of Hong Kong00600009
Funding Information:

This work is financially supported by the National Natural Science Foundation of China (Grant No. 60776016), the RGC of HKSAR, China (Project No. HKU 713308E), and the University Development Fund (Nanotechnology Research Institute, 00600009) of the University of Hong Kong.

References
Grants

 

DC FieldValueLanguage
dc.contributor.authorXu, HXen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLi, CXen_HK
dc.contributor.authorChan, CLen_HK
dc.contributor.authorLai, PTen_HK
dc.date.accessioned2012-02-21T05:45:07Z-
dc.date.available2012-02-21T05:45:07Z-
dc.date.issued2010en_HK
dc.identifier.citationApplied Physics A: Materials Science And Processing, 2010, v. 99 n. 4, p. 903-906en_HK
dc.identifier.issn0947-8396en_HK
dc.identifier.urihttp://hdl.handle.net/10722/145007-
dc.description.abstractGe Metal-Oxide-Semiconductor (MOS) capacitors with LaON gate dielectric incorporating different Ti contents are fabricated and their electrical properties are measured and compared. It is found that Ti incorporation can increase the dielectric permittivity, and the higher the Ti content, the larger is the permittivity. However, the interfacial and gate-leakage properties become poorer as the Ti content increases. Therefore, optimization of Ti content is important in order to obtain a good trade-off among the electrical properties of the device. For the studied range of the Ti/La 2O 3 ratio, a suitable Ti/La 2O 3 ratio of 14.7% results in a high relative permittivity of 24.6, low interfacestate density of 3.1 × 10 11 eV -1 cm -2, and relatively low gate-leakage current density of 2.0×10 -3 Acm -2 at a gate voltage of 1 V. © The Author(s) 2010.en_HK
dc.languageengen_US
dc.publisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htmen_HK
dc.relation.ispartofApplied Physics A: Materials Science and Processingen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong Licenseen_US
dc.subjectDielectric permittivitiesen_US
dc.subjectElectrical propertyen_US
dc.subjectGate voltagesen_US
dc.subjectGate-leakageen_US
dc.subjectGate-leakage currenten_US
dc.titleImpacts of Ti on electrical properties of Ge metal-oxide-semiconductor capacitors with ultrathin high-κ LaTiON gate dielectricen_HK
dc.typeArticleen_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1007/s00339-010-5665-5en_HK
dc.identifier.scopuseid_2-s2.0-77954888579en_HK
dc.identifier.hkuros179085-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77954888579&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume99en_HK
dc.identifier.issue4en_HK
dc.identifier.spage903en_HK
dc.identifier.epage906en_HK
dc.identifier.eissn1432-0630en_US
dc.identifier.isiWOS:000278519700033-
dc.publisher.placeGermanyen_HK
dc.description.otherSpringer Open Choice, 21 Feb 2012en_US
dc.relation.projectHigh-k Gate Dielectrics for High-Performance Germanium MISFET's-
dc.identifier.scopusauthoridXu, HX=25639287800en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridLi, CX=22034888200en_HK
dc.identifier.scopusauthoridChan, CL=8507083700en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.citeulike7074094-

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