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Article: Improved charge-trapping properties of HfYON film for nonvolatile memory applications in comparison with HfON and Y 2O 3 films

TitleImproved charge-trapping properties of HfYON film for nonvolatile memory applications in comparison with HfON and Y 2O 3 films
Authors
Issue Date2011
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2011, v. 99 n. 11, article no. 112903 How to Cite?
AbstractThe charge-trapping properties of HfYON film are investigated by using the Al/HfYON/SiO 2/Si structure. The physical features of this film were explored by transmission electron microscopy and x-ray photoelectron spectroscopy. The proposed device shows better charge-trapping characteristics than samples with HfON or Y 2O 3 as the charge-trapping layer due to its higher trapping efficiency, as confirmed by extracting their charge-trap centroid and charge-trap density. Moreover, the Al/Al 2O 3/HfYON/SiO 2/Si structure shows high program speed (4.5 V at 14 V, 1 ms), large memory window (6.0 V at 14 V, 1 s), and good retention property, further demonstrating that HfYON is a promising candidate as the charge-trapping layer for nonvolatile memory applications. © 2011 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/155662
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
Funding AgencyGrant Number
National Natural Science Foundation of China60976091
Nanotechnology Research Institute of the University of Hong Kong00600009
Funding Information:

This work is financially supported by the University Development Fund (Nanotechnology Research Institute, 00600009) of the University of Hong Kong and the National Natural Science Foundation of China (Grant no. 60976091).

References

 

DC FieldValueLanguage
dc.contributor.authorHuang, XDen_US
dc.contributor.authorLiu, Len_US
dc.contributor.authorXu, JPen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2012-08-08T08:34:43Z-
dc.date.available2012-08-08T08:34:43Z-
dc.date.issued2011en_US
dc.identifier.citationApplied Physics Letters, 2011, v. 99 n. 11, article no. 112903en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/155662-
dc.description.abstractThe charge-trapping properties of HfYON film are investigated by using the Al/HfYON/SiO 2/Si structure. The physical features of this film were explored by transmission electron microscopy and x-ray photoelectron spectroscopy. The proposed device shows better charge-trapping characteristics than samples with HfON or Y 2O 3 as the charge-trapping layer due to its higher trapping efficiency, as confirmed by extracting their charge-trap centroid and charge-trap density. Moreover, the Al/Al 2O 3/HfYON/SiO 2/Si structure shows high program speed (4.5 V at 14 V, 1 ms), large memory window (6.0 V at 14 V, 1 s), and good retention property, further demonstrating that HfYON is a promising candidate as the charge-trapping layer for nonvolatile memory applications. © 2011 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics-
dc.rightsCopyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2011, v. 99 n. 11, article no. 112903 and may be found at http://scitation.aip.org/content/aip/journal/apl/99/11/10.1063/1.3639275-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleImproved charge-trapping properties of HfYON film for nonvolatile memory applications in comparison with HfON and Y 2O 3 filmsen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1063/1.3639275en_US
dc.identifier.scopuseid_2-s2.0-80053190445en_US
dc.identifier.hkuros225731-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-80053190445&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume99en_US
dc.identifier.issue11en_US
dc.identifier.isiWOS:000295034400052-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridHuang, XD=37057428400en_US
dc.identifier.scopusauthoridLiu, L=35778603700en_US
dc.identifier.scopusauthoridXu, JP=35754128700en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US

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