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Article: Improved interface properties of p-type 6H–SiC/SiO2 system by NH3 pretreatment

TitleImproved interface properties of p-type 6H–SiC/SiO2 system by NH3 pretreatment
Authors
KeywordsPhysics engineering
Issue Date2000
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2000, v. 76 n. 3, p. 372-374 How to Cite?
AbstractEffects of preoxidation NH3 treatment on p-type 6H–SiC/SiO2 interface properties were investigated as compared to conventional thermally oxidized devices. It was found that NH3 treatment before oxidation can reduce the SiC/SiO2 interface states and fixed oxide charge. Furthermore, less shift of flatband voltage, and smaller increases of effective oxide charge and interface states during high-field stress were observed for the NH3 pretreated devices. © 2000 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42109
ISSN
2017 Impact Factor: 3.495
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorChan, CLen_HK
dc.contributor.authorCheng, YCen_HK
dc.date.accessioned2007-01-08T02:29:10Z-
dc.date.available2007-01-08T02:29:10Z-
dc.date.issued2000en_HK
dc.identifier.citationApplied Physics Letters, 2000, v. 76 n. 3, p. 372-374-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42109-
dc.description.abstractEffects of preoxidation NH3 treatment on p-type 6H–SiC/SiO2 interface properties were investigated as compared to conventional thermally oxidized devices. It was found that NH3 treatment before oxidation can reduce the SiC/SiO2 interface states and fixed oxide charge. Furthermore, less shift of flatband voltage, and smaller increases of effective oxide charge and interface states during high-field stress were observed for the NH3 pretreated devices. © 2000 American Institute of Physics.en_HK
dc.format.extent49222 bytes-
dc.format.extent3688 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Letters-
dc.rightsCopyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2000, v. 76 n. 3, p. 372-374 and may be found at https://doi.org/10.1063/1.126120-
dc.subjectPhysics engineeringen_HK
dc.titleImproved interface properties of p-type 6H–SiC/SiO2 system by NH3 pretreatmenten_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=76&issue=3&spage=372&epage=374&date=2000&atitle=Improved+interface+properties+of+p-type+6H–SiC/SiO2+system+by+NH3+pretreatmenten_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.126120en_HK
dc.identifier.scopuseid_2-s2.0-0041729304-
dc.identifier.hkuros54581-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0041729304&selection=ref&src=s&origin=recordpage-
dc.identifier.volume76-
dc.identifier.issue3-
dc.identifier.spage372-
dc.identifier.epage374-
dc.identifier.isiWOS:000084675100041-
dc.publisher.placeUnited States-
dc.identifier.scopusauthoridXu, JP=22952417000-
dc.identifier.scopusauthoridLai, PT=7202946460-
dc.identifier.scopusauthoridChan, CL=8507083700-
dc.identifier.scopusauthoridCheng, YC=27167728600-

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