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Article: Improved interface properties of p-type 6H–SiC/SiO2 system by NH3 pretreatment

TitleImproved interface properties of p-type 6H–SiC/SiO2 system by NH3 pretreatment
Authors
KeywordsPhysics engineering
Issue Date2000
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2000, v. 76 n. 3, p. 372-374 How to Cite?
AbstractEffects of preoxidation NH3 treatment on p-type 6H–SiC/SiO2 interface properties were investigated as compared to conventional thermally oxidized devices. It was found that NH3 treatment before oxidation can reduce the SiC/SiO2 interface states and fixed oxide charge. Furthermore, less shift of flatband voltage, and smaller increases of effective oxide charge and interface states during high-field stress were observed for the NH3 pretreated devices. © 2000 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42109
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorChan, CLen_HK
dc.contributor.authorCheng, YCen_HK
dc.date.accessioned2007-01-08T02:29:10Z-
dc.date.available2007-01-08T02:29:10Z-
dc.date.issued2000en_HK
dc.identifier.citationApplied Physics Letters, 2000, v. 76 n. 3, p. 372-374en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42109-
dc.description.abstractEffects of preoxidation NH3 treatment on p-type 6H–SiC/SiO2 interface properties were investigated as compared to conventional thermally oxidized devices. It was found that NH3 treatment before oxidation can reduce the SiC/SiO2 interface states and fixed oxide charge. Furthermore, less shift of flatband voltage, and smaller increases of effective oxide charge and interface states during high-field stress were observed for the NH3 pretreated devices. © 2000 American Institute of Physics.en_HK
dc.format.extent49222 bytes-
dc.format.extent3688 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Letters-
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleImproved interface properties of p-type 6H–SiC/SiO2 system by NH3 pretreatmenten_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=76&issue=3&spage=372&epage=374&date=2000&atitle=Improved+interface+properties+of+p-type+6H–SiC/SiO2+system+by+NH3+pretreatmenten_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.126120en_HK
dc.identifier.scopuseid_2-s2.0-0041729304-
dc.identifier.hkuros54581-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0041729304&selection=ref&src=s&origin=recordpage-
dc.identifier.isiWOS:000084675100041-
dc.publisher.placeUnited States-
dc.identifier.scopusauthoridXu, JP=22952417000-
dc.identifier.scopusauthoridLai, PT=7202946460-
dc.identifier.scopusauthoridChan, CL=8507083700-
dc.identifier.scopusauthoridCheng, YC=27167728600-

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