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Article: Improved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer

TitleImproved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer
Authors
KeywordsPhysics engineering
Issue Date2007
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2007, v. 91 n. 15 How to Cite?
AbstractMetal-oxide-semiconductor (MOS) capacitor with HfTiONHfSiON stack structure as high- k gate dielectric is fabricated, and its electrical properties are compared with those of a similar device with HfTiON only as gate dielectric. Experimental results show that the device with HfTiONHfSiON gate dielectric exhibits better interface properties, lower gate leakage current, and enhanced high-field reliability. All these improvements should be attributed to the fact that the HfSiON buffer layer effectively blocks the diffusion of Ti atoms to the Si substrate, thus resulting in a Si O2 Si -like HfSiONSi interface. © 2007 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/57453
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorXu, JPen_HK
dc.contributor.authorJi, Fen_HK
dc.contributor.authorLi, CXen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorGuan, JGen_HK
dc.contributor.authorLiu, YRen_HK
dc.date.accessioned2010-04-12T01:37:10Z-
dc.date.available2010-04-12T01:37:10Z-
dc.date.issued2007en_HK
dc.identifier.citationApplied Physics Letters, 2007, v. 91 n. 15en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/57453-
dc.description.abstractMetal-oxide-semiconductor (MOS) capacitor with HfTiONHfSiON stack structure as high- k gate dielectric is fabricated, and its electrical properties are compared with those of a similar device with HfTiON only as gate dielectric. Experimental results show that the device with HfTiONHfSiON gate dielectric exhibits better interface properties, lower gate leakage current, and enhanced high-field reliability. All these improvements should be attributed to the fact that the HfSiON buffer layer effectively blocks the diffusion of Ti atoms to the Si substrate, thus resulting in a Si O2 Si -like HfSiONSi interface. © 2007 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_HK
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.subjectPhysics engineeringen_HK
dc.titleImproved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayeren_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=91&issue=15&spage=152905&epage=1 &date=2007&atitle=Improved+electrical+properties+of+metal-oxide-semiconductor+capacitor+with+HfTiON+gate+dielectric+by+using+HfSiON+interlayeren_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2798248en_HK
dc.identifier.scopuseid_2-s2.0-35248870050en_HK
dc.identifier.hkuros150342-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-35248870050&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume91en_HK
dc.identifier.issue15en_HK
dc.identifier.isiWOS:000250140700041-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridJi, F=8238553900en_HK
dc.identifier.scopusauthoridLi, CX=22034888200en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridGuan, JG=7201449685en_HK
dc.identifier.scopusauthoridLiu, YR=36062331200en_HK

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