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Article: Improved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer

TitleImproved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer
Authors
KeywordsPhysics engineering
Issue Date2007
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2007, v. 91 n. 15, article no. 152905 How to Cite?
AbstractMetal-oxide-semiconductor (MOS) capacitor with HfTiONHfSiON stack structure as high- k gate dielectric is fabricated, and its electrical properties are compared with those of a similar device with HfTiON only as gate dielectric. Experimental results show that the device with HfTiONHfSiON gate dielectric exhibits better interface properties, lower gate leakage current, and enhanced high-field reliability. All these improvements should be attributed to the fact that the HfSiON buffer layer effectively blocks the diffusion of Ti atoms to the Si substrate, thus resulting in a Si O2 Si -like HfSiONSi interface. © 2007 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/57453
ISSN
2017 Impact Factor: 3.495
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorXu, JPen_HK
dc.contributor.authorJi, Fen_HK
dc.contributor.authorLi, CXen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorGuan, JGen_HK
dc.contributor.authorLiu, YRen_HK
dc.date.accessioned2010-04-12T01:37:10Z-
dc.date.available2010-04-12T01:37:10Z-
dc.date.issued2007en_HK
dc.identifier.citationApplied Physics Letters, 2007, v. 91 n. 15, article no. 152905-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/57453-
dc.description.abstractMetal-oxide-semiconductor (MOS) capacitor with HfTiONHfSiON stack structure as high- k gate dielectric is fabricated, and its electrical properties are compared with those of a similar device with HfTiON only as gate dielectric. Experimental results show that the device with HfTiONHfSiON gate dielectric exhibits better interface properties, lower gate leakage current, and enhanced high-field reliability. All these improvements should be attributed to the fact that the HfSiON buffer layer effectively blocks the diffusion of Ti atoms to the Si substrate, thus resulting in a Si O2 Si -like HfSiONSi interface. © 2007 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2007, v. 91 n. 15, article no. 152905 and may be found at https://doi.org/10.1063/1.2798248-
dc.subjectPhysics engineeringen_HK
dc.titleImproved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayeren_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=91&issue=15&spage=152905&epage=1 &date=2007&atitle=Improved+electrical+properties+of+metal-oxide-semiconductor+capacitor+with+HfTiON+gate+dielectric+by+using+HfSiON+interlayeren_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2798248en_HK
dc.identifier.scopuseid_2-s2.0-35248870050en_HK
dc.identifier.hkuros150342-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-35248870050&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume91en_HK
dc.identifier.issue15en_HK
dc.identifier.spagearticle no. 152905-
dc.identifier.epagearticle no. 152905-
dc.identifier.isiWOS:000250140700041-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridJi, F=8238553900en_HK
dc.identifier.scopusauthoridLi, CX=22034888200en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridGuan, JG=7201449685en_HK
dc.identifier.scopusauthoridLiu, YR=36062331200en_HK

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