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Article: Gate leakage properties of MOS devices with tri-layer high-k gate dielectric

TitleGate leakage properties of MOS devices with tri-layer high-k gate dielectric
Authors
Issue Date2007
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel
Citation
Microelectronics Reliability, 2007, v. 47 n. 6, p. 937-943 How to Cite?
AbstractGate leakage of deep-submicron MOSFET with stack high-k dielectrics as gate insulator is studied by building a model of tunneling current. Validity of the model is checked when it is used for MOSFET with SiO 2 and high-k dielectric material as gate dielectrics, respectively, and simulated results exhibit good agreement with experimental data. The model is successfully used for a tri-layer gate-dielectric structure of HfON/HfO 2/HfSiON with a U-shape nitrogen profile and a like-Si/SiO 2 interface, which is proposed to solve the problems of boron diffusion into channel region and high interface-state density between Si and high-k dielectric. By using the model, the optimum structural parameters of the tri-layer dielectric can be determined. For example, for an equivalent oxide thickness of 2.0 nm, the tri-layer gate-dielectric MOS capacitor with 0.3-nm HfON, 0.5-nm HfO 2 and 1.2-nm HfSiON exhibits the lowest gate leakage. © 2006 Elsevier Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/73643
ISSN
2015 Impact Factor: 1.202
2015 SCImago Journal Rankings: 0.675
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChen, WBen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorLi, YPen_HK
dc.contributor.authorXu, SGen_HK
dc.date.accessioned2010-09-06T06:53:22Z-
dc.date.available2010-09-06T06:53:22Z-
dc.date.issued2007en_HK
dc.identifier.citationMicroelectronics Reliability, 2007, v. 47 n. 6, p. 937-943en_HK
dc.identifier.issn0026-2714en_HK
dc.identifier.urihttp://hdl.handle.net/10722/73643-
dc.description.abstractGate leakage of deep-submicron MOSFET with stack high-k dielectrics as gate insulator is studied by building a model of tunneling current. Validity of the model is checked when it is used for MOSFET with SiO 2 and high-k dielectric material as gate dielectrics, respectively, and simulated results exhibit good agreement with experimental data. The model is successfully used for a tri-layer gate-dielectric structure of HfON/HfO 2/HfSiON with a U-shape nitrogen profile and a like-Si/SiO 2 interface, which is proposed to solve the problems of boron diffusion into channel region and high interface-state density between Si and high-k dielectric. By using the model, the optimum structural parameters of the tri-layer dielectric can be determined. For example, for an equivalent oxide thickness of 2.0 nm, the tri-layer gate-dielectric MOS capacitor with 0.3-nm HfON, 0.5-nm HfO 2 and 1.2-nm HfSiON exhibits the lowest gate leakage. © 2006 Elsevier Ltd. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrelen_HK
dc.relation.ispartofMicroelectronics Reliabilityen_HK
dc.titleGate leakage properties of MOS devices with tri-layer high-k gate dielectricen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0026-2714&volume=47&spage=937&epage=943&date=2007&atitle=Gate+Leakage+Properties+of+MOS+Devices+with+Tri-Layer+High-k+Gate+Dielectricen_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.microrel.2006.06.002en_HK
dc.identifier.scopuseid_2-s2.0-34247899053en_HK
dc.identifier.hkuros135366en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-34247899053&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume47en_HK
dc.identifier.issue6en_HK
dc.identifier.spage937en_HK
dc.identifier.epage943en_HK
dc.identifier.isiWOS:000247185800013-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridChen, WB=15119171500en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridLi, YP=8704252400en_HK
dc.identifier.scopusauthoridXu, SG=14055300000en_HK

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