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Article: Improved electrical properties of HfTiO/GeO x N y gate dielectric Ge MOS capacitors by using wet-NO Ge-surface pretreatment

TitleImproved electrical properties of HfTiO/GeO x N y gate dielectric Ge MOS capacitors by using wet-NO Ge-surface pretreatment
Authors
Issue Date2009
PublisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
Citation
Applied Physics A: Materials Science And Processing, 2009, v. 94 n. 2, p. 419-422 How to Cite?
AbstractReactive cosputtering is employed to prepare high-permittivity HfTiO gate dielectric on n-Ge substrate. Effects of Ge-surface pretreatment on the interface and gate leakage properties of the dielectric are investigated. Excellent performances of Al/HfTiO/GeO x N y /n-Ge MOS capacitor with wet-NO surface pretreatment have been achieved with a interface-state density of 2.1×10 11 eV -1∈cm -2, equivalent oxide charge of -7.67×10 11 cm -2 and gate leakage current density of 4.97×10 -5 A/cm 2 at V g =1 V. © 2008 Springer-Verlag.
Persistent Identifierhttp://hdl.handle.net/10722/155499
ISSN
2015 Impact Factor: 1.444
2015 SCImago Journal Rankings: 0.535
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorXu, JPen_HK
dc.contributor.authorZou, Xen_HK
dc.contributor.authorLi, CXen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorChan, CLen_HK
dc.date.accessioned2012-08-08T08:33:48Z-
dc.date.available2012-08-08T08:33:48Z-
dc.date.issued2009en_HK
dc.identifier.citationApplied Physics A: Materials Science And Processing, 2009, v. 94 n. 2, p. 419-422en_HK
dc.identifier.issn0947-8396en_HK
dc.identifier.urihttp://hdl.handle.net/10722/155499-
dc.description.abstractReactive cosputtering is employed to prepare high-permittivity HfTiO gate dielectric on n-Ge substrate. Effects of Ge-surface pretreatment on the interface and gate leakage properties of the dielectric are investigated. Excellent performances of Al/HfTiO/GeO x N y /n-Ge MOS capacitor with wet-NO surface pretreatment have been achieved with a interface-state density of 2.1×10 11 eV -1∈cm -2, equivalent oxide charge of -7.67×10 11 cm -2 and gate leakage current density of 4.97×10 -5 A/cm 2 at V g =1 V. © 2008 Springer-Verlag.en_HK
dc.languageengen_US
dc.publisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htmen_HK
dc.relation.ispartofApplied Physics A: Materials Science and Processingen_HK
dc.titleImproved electrical properties of HfTiO/GeO x N y gate dielectric Ge MOS capacitors by using wet-NO Ge-surface pretreatmenten_HK
dc.typeArticleen_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1007/s00339-008-4830-6en_HK
dc.identifier.scopuseid_2-s2.0-57249094365en_HK
dc.identifier.hkuros164222-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-57249094365&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume94en_HK
dc.identifier.issue2en_HK
dc.identifier.spage419en_HK
dc.identifier.epage422en_HK
dc.identifier.isiWOS:000261257100031-
dc.publisher.placeGermanyen_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridZou, X=23020170400en_HK
dc.identifier.scopusauthoridLi, CX=22034888200en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridChan, CL=8507083700en_HK
dc.identifier.citeulike3890867-

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