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Browsing by Author Asenov, Asen
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Showing results 1 to 19 of 19
Title
Author(s)
Issue Date
3-D statistical simulation comparison of oxide reliability of planar MOSFETs and FinFET
Journal:
IEEE Transactions on Electron Devices
Gerrer, Louis
Amoroso, Salvatore Maria
Markov, Stanislav
Adamu-Lema, Fikru
Asenov, Asen
2013
3D dynamic RTN simulation of a 25nm MOSFET: The importance of variability in reliability evaluation of decananometer devices
Proceeding/Conference:
2012 15th International Workshop on Computational Electronics, IWCE 2012
Amoroso, Salvatore Maria
Adamu-Lema, Fikru
Markov, Stanislav
Gerrer, Louis
Asenov, Asen
2012
Accuracy and issues of the spectroscopic analysis of RTN traps in nanoscale MOSFETs
Journal:
IEEE Transactions on Electron Devices
Adamu-Lema, Fikru
Compagnoni, Christian Monzio
Amoroso, Salvatore M.
Castellani, Niccolò
Gerrer, Louis
Markov, Stanislav
Spinelli, Alessandro S.
Lacaita, Andrea L.
Asenov, Asen
2013
Comprehensive statistical comparison of RTN and BTI in deeply scaled MOSFETs by means of 3D atomistic simulation
Proceeding/Conference:
European Solid-State Device Research Conference
Amoroso, Salvatore M.
Gerrer, Louis
Markov, Stanislav
Adamu-Lema, Fikru
Asenov, Asen
2012
Comprehensive study of the statistical variability in a 22 nm fully depleted ultra-thin-body SOI MOSFET
Journal:
Solid-State Electronics
Mohd Zain, Anis Suhaila
Markov, Stanislav
Cheng, Binjie
Asenov, Asen
2013
Direct tunnelling gate leakage variability in Nano-CMOS transistors
Journal:
IEEE Transactions on Electron Devices
Markov, Stanislav
Roy, Scott
Asenov, Asen
2010
Drain current collapse in nanoscaled bulk MOSFETs due to random dopant compensation in the source/drain extensions
Journal:
IEEE Transactions on Electron Devices
Markov, Stanislav
Wang, Xingsheng
Moezi, Negin
Asenov, Asen
2011
Impact of statistical variability and 3D electrostatics on post-cycling anomalous charge loss in nanoscale Flash memories
Proceeding/Conference:
IEEE International Reliability Physics Symposium Proceedings
Amoroso, Salvatore Maria
Gerrer, Louis
Adamu-Lema, Fikru
Markov, Stanislav
Asenov, Asen
2013
Multi-scale computational framework for the evaluation of variability in the programing window of a flash cell with molecular storage
Proceeding/Conference:
European Solid-State Device Research Conference
Georgiev, Vihar P.
Markov, Stanislav
Vilà-Nadal, Laia
Busche, Cristoph
Cronin, Leroy
Asenov, Asen
2013
Optimization and evaluation of variability in the programming window of a flash cell with molecular metal-oxide storage
Journal:
IEEE Transactions on Electron Devices
Georgiev, Vihar P.
Markov, Stanislav
Vilà-Nadal, Laia
Busche, Christoph
Cronin, Leroy
Asenov, Asen
2014
RTN and BTI in nanoscale MOSFETs: A comprehensive statistical simulation study
Journal:
Solid-State Electronics
Amoroso, Salvatore Maria
Gerrer, Louis
Markov, Stanislav
Adamu-Lema, Fikru
Asenov, Asen
2013
Si-SiO 2 interface band-gap transition - Effects on MOS inversion layer
Proceeding/Conference:
Physica Status Solidi (A) Applications and Materials Science
Markov, Stanislav
Sushko, Peter V.
Roy, Scott
Fiegna, Claudio
Sangiorgi, Enrico
Shluger, Alexander L.
Asenov, Asen
2008
Statistical interactions of multiple oxide traps under BTI stress of nanoscale MOSFETs
Journal:
IEEE Electron Device Letters
Markov, Stanislav
Amoroso, Salvatore Maria
Gerrer, Louis
Adamu-Lema, Fikru
Asenov, Asen
2013
Statistical threshold-voltage variability in scaled decananometer bulk HKMG MOSFETs: A full-scale 3-D simulation scaling study
Journal:
IEEE Transactions on Electron Devices
Wang, Xingsheng
Brown, Andrew R.
Idris, Niza
Markov, Stanislav
Roy, Gareth
Asenov, Asen
2011
Statistical variability in fully depleted SOI MOSFETs due to random dopant fluctuations in the source and drain extensions
Journal:
IEEE Electron Device Letters
Markov, Stanislav
Cheng, Binjie
Asenov, Asen
2012
Statistical variability in n-channel UTB-FD-SOI MOSFETs under the influence of RDF, LER, MGG and PBTI
Proceeding/Conference:
Proceedings - IEEE International SOI Conference
Markov, Stanislav
Idris, Niza Mohd
Asenov, Asen
2011
Statistical variability in scaled generations of n-channel UTB-FD-SOI MOSFETs under the influence of RDF, LER, OTF and MGG
Proceeding/Conference:
Proceedings - IEEE International SOI Conference
Markov, Stanislav
Zain, Anis Suhaila Mohd
Cheng, Binjie
Asenov, Asen
2012
Three-dimensional statistical simulation of gate leakage fluctuations due to combined interface roughness and random dopants
Journal:
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Markov, Stanislav
Brown, Andrew R.
Cheng, Binjie
Roy, Gareth
Roy, Scott
Asenov, Asen
2007
Towards polyoxometalate-cluster-based nano-electronics
Journal:
Chemistry - A European Journal
Vilà-Nadal, Laia
Mitchell, Scott G.
Markov, Stanislav
Busche, Christoph
Georgiev, Vihar
Asenov, Asen
Cronin, Leroy
2013