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Article: Optimization and evaluation of variability in the programming window of a flash cell with molecular metal-oxide storage
Title | Optimization and evaluation of variability in the programming window of a flash cell with molecular metal-oxide storage |
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Authors | |
Keywords | nonvolatile memory (NVM) Device variability polyoxometalates (POMs). molecular electronics multiscale modeling |
Issue Date | 2014 |
Citation | IEEE Transactions on Electron Devices, 2014, v. 61, n. 6, p. 2019-2026 How to Cite? |
Abstract | We report a modeling study of a conceptual nonvolatile memory cell based on inorganic molecular metal-oxide clusters as a storage media embedded in the gate dielectric of a MOSFET. For the purpose of this paper, we developed a multiscale simulation framework that enables the evaluation of variability in the programming window of a flash cell with sub-20-nm gate length. Furthermore, we studied the threshold voltage variability due to random dopant fluctuations and fluctuations in the distribution of the molecular clusters in the cell. The simulation framework and the general conclusions of our work are transferrable to flash cells based on alternative molecules used for a storage media. © 1963-2012 IEEE. |
Persistent Identifier | http://hdl.handle.net/10722/221361 |
ISSN | 2023 Impact Factor: 2.9 2023 SCImago Journal Rankings: 0.785 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Georgiev, Vihar P. | - |
dc.contributor.author | Markov, Stanislav | - |
dc.contributor.author | Vilà-Nadal, Laia | - |
dc.contributor.author | Busche, Christoph | - |
dc.contributor.author | Cronin, Leroy | - |
dc.contributor.author | Asenov, Asen | - |
dc.date.accessioned | 2015-11-18T06:09:06Z | - |
dc.date.available | 2015-11-18T06:09:06Z | - |
dc.date.issued | 2014 | - |
dc.identifier.citation | IEEE Transactions on Electron Devices, 2014, v. 61, n. 6, p. 2019-2026 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10722/221361 | - |
dc.description.abstract | We report a modeling study of a conceptual nonvolatile memory cell based on inorganic molecular metal-oxide clusters as a storage media embedded in the gate dielectric of a MOSFET. For the purpose of this paper, we developed a multiscale simulation framework that enables the evaluation of variability in the programming window of a flash cell with sub-20-nm gate length. Furthermore, we studied the threshold voltage variability due to random dopant fluctuations and fluctuations in the distribution of the molecular clusters in the cell. The simulation framework and the general conclusions of our work are transferrable to flash cells based on alternative molecules used for a storage media. © 1963-2012 IEEE. | - |
dc.language | eng | - |
dc.relation.ispartof | IEEE Transactions on Electron Devices | - |
dc.subject | nonvolatile memory (NVM) | - |
dc.subject | Device variability | - |
dc.subject | polyoxometalates (POMs). | - |
dc.subject | molecular electronics | - |
dc.subject | multiscale modeling | - |
dc.title | Optimization and evaluation of variability in the programming window of a flash cell with molecular metal-oxide storage | - |
dc.type | Article | - |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1109/TED.2014.2315520 | - |
dc.identifier.scopus | eid_2-s2.0-84901446630 | - |
dc.identifier.hkuros | 234409 | - |
dc.identifier.volume | 61 | - |
dc.identifier.issue | 6 | - |
dc.identifier.spage | 2019 | - |
dc.identifier.epage | 2026 | - |
dc.identifier.isi | WOS:000338026200061 | - |
dc.identifier.issnl | 0018-9383 | - |