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Article: Optimization and evaluation of variability in the programming window of a flash cell with molecular metal-oxide storage

TitleOptimization and evaluation of variability in the programming window of a flash cell with molecular metal-oxide storage
Authors
Keywordsnonvolatile memory (NVM)
Device variability
polyoxometalates (POMs).
molecular electronics
multiscale modeling
Issue Date2014
Citation
IEEE Transactions on Electron Devices, 2014, v. 61, n. 6, p. 2019-2026 How to Cite?
AbstractWe report a modeling study of a conceptual nonvolatile memory cell based on inorganic molecular metal-oxide clusters as a storage media embedded in the gate dielectric of a MOSFET. For the purpose of this paper, we developed a multiscale simulation framework that enables the evaluation of variability in the programming window of a flash cell with sub-20-nm gate length. Furthermore, we studied the threshold voltage variability due to random dopant fluctuations and fluctuations in the distribution of the molecular clusters in the cell. The simulation framework and the general conclusions of our work are transferrable to flash cells based on alternative molecules used for a storage media. © 1963-2012 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/221361
ISSN
2015 Impact Factor: 2.207
2015 SCImago Journal Rankings: 1.436
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorGeorgiev, Vihar P.-
dc.contributor.authorMarkov, Stanislav-
dc.contributor.authorVilà-Nadal, Laia-
dc.contributor.authorBusche, Christoph-
dc.contributor.authorCronin, Leroy-
dc.contributor.authorAsenov, Asen-
dc.date.accessioned2015-11-18T06:09:06Z-
dc.date.available2015-11-18T06:09:06Z-
dc.date.issued2014-
dc.identifier.citationIEEE Transactions on Electron Devices, 2014, v. 61, n. 6, p. 2019-2026-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10722/221361-
dc.description.abstractWe report a modeling study of a conceptual nonvolatile memory cell based on inorganic molecular metal-oxide clusters as a storage media embedded in the gate dielectric of a MOSFET. For the purpose of this paper, we developed a multiscale simulation framework that enables the evaluation of variability in the programming window of a flash cell with sub-20-nm gate length. Furthermore, we studied the threshold voltage variability due to random dopant fluctuations and fluctuations in the distribution of the molecular clusters in the cell. The simulation framework and the general conclusions of our work are transferrable to flash cells based on alternative molecules used for a storage media. © 1963-2012 IEEE.-
dc.languageeng-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©2014 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectnonvolatile memory (NVM)-
dc.subjectDevice variability-
dc.subjectpolyoxometalates (POMs).-
dc.subjectmolecular electronics-
dc.subjectmultiscale modeling-
dc.titleOptimization and evaluation of variability in the programming window of a flash cell with molecular metal-oxide storage-
dc.typeArticle-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/TED.2014.2315520-
dc.identifier.scopuseid_2-s2.0-84901446630-
dc.identifier.hkuros234409-
dc.identifier.volume61-
dc.identifier.issue6-
dc.identifier.spage2019-
dc.identifier.epage2026-
dc.identifier.isiWOS:000338026200061-

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