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Article: Statistical threshold-voltage variability in scaled decananometer bulk HKMG MOSFETs: A full-scale 3-D simulation scaling study

TitleStatistical threshold-voltage variability in scaled decananometer bulk HKMG MOSFETs: A full-scale 3-D simulation scaling study
Authors
Keywordsscaling
Granularity
metal gate
MOSFETs
variability
workfunction
Issue Date2011
Citation
IEEE Transactions on Electron Devices, 2011, v. 58, n. 8, p. 2293-2301 How to Cite?
AbstractThis paper presents a comprehensive full-scale three-dimensional simulation scaling study of the statistical threshold-voltage variability in bulk high-k/metal gate (HKMG) MOSFETs with gate lengths of 35, 25, 18, and 13 nm. Metal gate granularity (MGG) and corresponding workfunction-induced threshold-voltage variability have become important sources of statistical variability in bulk HKMG MOSFETs. It is found that the number of metal grains covering the gate plays an important role in determining the shape of the threshold-voltage distribution and the magnitude of the threshold-voltage variability in scaled devices in the presence of dominant variability sources (MGG, random discrete dopants, and line edge roughness). The placement of metal grains is found to also contribute to the total MGG variability. This paper presents the relative importance of MGG compared with other statistical variability sources. It is found that MGG can distort and even dominate the threshold-voltage statistical distribution when the metal grain size cannot be adequately controlled. © 2010 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/221318
ISSN
2015 Impact Factor: 2.207
2015 SCImago Journal Rankings: 1.436

 

DC FieldValueLanguage
dc.contributor.authorWang, Xingsheng-
dc.contributor.authorBrown, Andrew R.-
dc.contributor.authorIdris, Niza-
dc.contributor.authorMarkov, Stanislav-
dc.contributor.authorRoy, Gareth-
dc.contributor.authorAsenov, Asen-
dc.date.accessioned2015-11-18T06:08:59Z-
dc.date.available2015-11-18T06:08:59Z-
dc.date.issued2011-
dc.identifier.citationIEEE Transactions on Electron Devices, 2011, v. 58, n. 8, p. 2293-2301-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10722/221318-
dc.description.abstractThis paper presents a comprehensive full-scale three-dimensional simulation scaling study of the statistical threshold-voltage variability in bulk high-k/metal gate (HKMG) MOSFETs with gate lengths of 35, 25, 18, and 13 nm. Metal gate granularity (MGG) and corresponding workfunction-induced threshold-voltage variability have become important sources of statistical variability in bulk HKMG MOSFETs. It is found that the number of metal grains covering the gate plays an important role in determining the shape of the threshold-voltage distribution and the magnitude of the threshold-voltage variability in scaled devices in the presence of dominant variability sources (MGG, random discrete dopants, and line edge roughness). The placement of metal grains is found to also contribute to the total MGG variability. This paper presents the relative importance of MGG compared with other statistical variability sources. It is found that MGG can distort and even dominate the threshold-voltage statistical distribution when the metal grain size cannot be adequately controlled. © 2010 IEEE.-
dc.languageeng-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.subjectscaling-
dc.subjectGranularity-
dc.subjectmetal gate-
dc.subjectMOSFETs-
dc.subjectvariability-
dc.subjectworkfunction-
dc.titleStatistical threshold-voltage variability in scaled decananometer bulk HKMG MOSFETs: A full-scale 3-D simulation scaling study-
dc.typeArticle-
dc.description.natureLink_to_subscribed_fulltext-
dc.identifier.doi10.1109/TED.2011.2149531-
dc.identifier.scopuseid_2-s2.0-79960840501-
dc.identifier.volume58-
dc.identifier.issue8-
dc.identifier.spage2293-
dc.identifier.epage2301-

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