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Article: Statistical interactions of multiple oxide traps under BTI stress of nanoscale MOSFETs

TitleStatistical interactions of multiple oxide traps under BTI stress of nanoscale MOSFETs
Authors
Keywordsvariability
Bias and temperature instability (BTI)
complimentary metal-oxide-semiconductor (CMOS)
random telegraph noise (RTN)
reliability
Issue Date2013
Citation
IEEE Electron Device Letters, 2013, v. 34, n. 5, p. 686-688 How to Cite?
AbstractWe report a thorough 3-D simulation study of the correlation between multiple, trapped charges in the gate oxide of nanoscale bulk MOSFETs under bias and temperature instability (BTI). The role of complex electrostatic interactions between the trapped charges in the presence of random dopant fluctuations is evaluated, and their impact on the distribution of the threshold voltage shift and on the distribution of the number of trapped charges is analyzed. The results justify the assumptions of a Poisson distribution of the BTI-induced trapped charges and of the lack of correlation between them, when accounting for time-dependent variability in circuits. © 1980-2012 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/221391
ISSN
2015 Impact Factor: 2.528
2015 SCImago Journal Rankings: 1.791
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorMarkov, Stanislav-
dc.contributor.authorAmoroso, Salvatore Maria-
dc.contributor.authorGerrer, Louis-
dc.contributor.authorAdamu-Lema, Fikru-
dc.contributor.authorAsenov, Asen-
dc.date.accessioned2015-11-18T06:09:11Z-
dc.date.available2015-11-18T06:09:11Z-
dc.date.issued2013-
dc.identifier.citationIEEE Electron Device Letters, 2013, v. 34, n. 5, p. 686-688-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10722/221391-
dc.description.abstractWe report a thorough 3-D simulation study of the correlation between multiple, trapped charges in the gate oxide of nanoscale bulk MOSFETs under bias and temperature instability (BTI). The role of complex electrostatic interactions between the trapped charges in the presence of random dopant fluctuations is evaluated, and their impact on the distribution of the threshold voltage shift and on the distribution of the number of trapped charges is analyzed. The results justify the assumptions of a Poisson distribution of the BTI-induced trapped charges and of the lack of correlation between them, when accounting for time-dependent variability in circuits. © 1980-2012 IEEE.-
dc.languageeng-
dc.relation.ispartofIEEE Electron Device Letters-
dc.rightsIEEE Electron Device Letters. Copyright © IEEE-
dc.rights©2013 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectvariability-
dc.subjectBias and temperature instability (BTI)-
dc.subjectcomplimentary metal-oxide-semiconductor (CMOS)-
dc.subjectrandom telegraph noise (RTN)-
dc.subjectreliability-
dc.titleStatistical interactions of multiple oxide traps under BTI stress of nanoscale MOSFETs-
dc.typeArticle-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/LED.2013.2253541-
dc.identifier.scopuseid_2-s2.0-84877004955-
dc.identifier.hkuros219004-
dc.identifier.volume34-
dc.identifier.issue5-
dc.identifier.spage686-
dc.identifier.epage688-
dc.identifier.isiWOS:000318433400038-

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