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Article: Drain current collapse in nanoscaled bulk MOSFETs due to random dopant compensation in the source/drain extensions

TitleDrain current collapse in nanoscaled bulk MOSFETs due to random dopant compensation in the source/drain extensions
Authors
Keywordsstatistical variability
Drain current collapse
random dopant fluctuations (RDFs)
Issue Date2011
Citation
IEEE Transactions on Electron Devices, 2011, v. 58, n. 8, p. 2385-2393 How to Cite?
AbstractWe reveal a new statistical variability phenomenon in bulk n-channel metal-oxide-semiconductor field-effect transistors scaled down to 18-nm physical gate length. Rare but dramatic on-current degradation is observed in 3-D simulations of large ensembles of transistors that are subject to random dopant fluctuations. Physically, it originates from the random compensation of donors (from the source or drain extension) and acceptors (from halo implants) around the access regions to the channel, leading to mobile charge starvation, dramatic increase in the access resistance, and corresponding current collapse. The estimated frequency of occurrence of the phenomenon is higher than one in a hundred for a square device and higher than 10-4 for two-times-wider devices, as demonstrated by simulations of 10000-device ensembles. © 2010 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/221317
ISSN
2015 Impact Factor: 2.207
2015 SCImago Journal Rankings: 1.436

 

DC FieldValueLanguage
dc.contributor.authorMarkov, Stanislav-
dc.contributor.authorWang, Xingsheng-
dc.contributor.authorMoezi, Negin-
dc.contributor.authorAsenov, Asen-
dc.date.accessioned2015-11-18T06:08:59Z-
dc.date.available2015-11-18T06:08:59Z-
dc.date.issued2011-
dc.identifier.citationIEEE Transactions on Electron Devices, 2011, v. 58, n. 8, p. 2385-2393-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10722/221317-
dc.description.abstractWe reveal a new statistical variability phenomenon in bulk n-channel metal-oxide-semiconductor field-effect transistors scaled down to 18-nm physical gate length. Rare but dramatic on-current degradation is observed in 3-D simulations of large ensembles of transistors that are subject to random dopant fluctuations. Physically, it originates from the random compensation of donors (from the source or drain extension) and acceptors (from halo implants) around the access regions to the channel, leading to mobile charge starvation, dramatic increase in the access resistance, and corresponding current collapse. The estimated frequency of occurrence of the phenomenon is higher than one in a hundred for a square device and higher than 10-4 for two-times-wider devices, as demonstrated by simulations of 10000-device ensembles. © 2010 IEEE.-
dc.languageeng-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.subjectstatistical variability-
dc.subjectDrain current collapse-
dc.subjectrandom dopant fluctuations (RDFs)-
dc.titleDrain current collapse in nanoscaled bulk MOSFETs due to random dopant compensation in the source/drain extensions-
dc.typeArticle-
dc.description.natureLink_to_subscribed_fulltext-
dc.identifier.doi10.1109/TED.2011.2152845-
dc.identifier.scopuseid_2-s2.0-79960837761-
dc.identifier.volume58-
dc.identifier.issue8-
dc.identifier.spage2385-
dc.identifier.epage2393-

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