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- Publisher Website: 10.1016/j.sse.2013.02.052
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Article: Comprehensive study of the statistical variability in a 22 nm fully depleted ultra-thin-body SOI MOSFET
Title | Comprehensive study of the statistical variability in a 22 nm fully depleted ultra-thin-body SOI MOSFET |
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Authors | |
Keywords | Work-function-variability Line-edge-roughness Random dopant fluctuations Silicon-on-insulator |
Issue Date | 2013 |
Citation | Solid-State Electronics, 2013, v. 90, p. 51-55 How to Cite? |
Abstract | A comprehensive study of statistical variability (SV) in scaled, fully-depleted (FD) SOI n-channel MOSFET with a physical gate length of 22 nm is reported. The impact of random discrete dopant (RDF), line edge roughness (LER) and metal gate granularity (MGG) on threshold voltage (VTH), drain-induced-barrier-lowering (DIBL) and on-current (Ion) are analyzed both individually and combined together. Results indicate that although MGG is the dominated variability source in the FD-SOI transistor, RDF has critical impact on the on-current variability. Moreover, the combination of RDF and LER can still dramatically modulate short channel effect behavior in the transistor. © 2013 Elsevier Ltd. All rights reserved. |
Persistent Identifier | http://hdl.handle.net/10722/221331 |
ISSN | 2023 Impact Factor: 1.4 2023 SCImago Journal Rankings: 0.348 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Mohd Zain, Anis Suhaila | - |
dc.contributor.author | Markov, Stanislav | - |
dc.contributor.author | Cheng, Binjie | - |
dc.contributor.author | Asenov, Asen | - |
dc.date.accessioned | 2015-11-18T06:09:01Z | - |
dc.date.available | 2015-11-18T06:09:01Z | - |
dc.date.issued | 2013 | - |
dc.identifier.citation | Solid-State Electronics, 2013, v. 90, p. 51-55 | - |
dc.identifier.issn | 0038-1101 | - |
dc.identifier.uri | http://hdl.handle.net/10722/221331 | - |
dc.description.abstract | A comprehensive study of statistical variability (SV) in scaled, fully-depleted (FD) SOI n-channel MOSFET with a physical gate length of 22 nm is reported. The impact of random discrete dopant (RDF), line edge roughness (LER) and metal gate granularity (MGG) on threshold voltage (VTH), drain-induced-barrier-lowering (DIBL) and on-current (Ion) are analyzed both individually and combined together. Results indicate that although MGG is the dominated variability source in the FD-SOI transistor, RDF has critical impact on the on-current variability. Moreover, the combination of RDF and LER can still dramatically modulate short channel effect behavior in the transistor. © 2013 Elsevier Ltd. All rights reserved. | - |
dc.language | eng | - |
dc.relation.ispartof | Solid-State Electronics | - |
dc.subject | Work-function-variability | - |
dc.subject | Line-edge-roughness | - |
dc.subject | Random dopant fluctuations | - |
dc.subject | Silicon-on-insulator | - |
dc.title | Comprehensive study of the statistical variability in a 22 nm fully depleted ultra-thin-body SOI MOSFET | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1016/j.sse.2013.02.052 | - |
dc.identifier.scopus | eid_2-s2.0-84887475446 | - |
dc.identifier.hkuros | 248645 | - |
dc.identifier.volume | 90 | - |
dc.identifier.spage | 51 | - |
dc.identifier.epage | 55 | - |
dc.identifier.isi | WOS:000327676800010 | - |
dc.identifier.issnl | 0038-1101 | - |