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Article: Towards polyoxometalate-cluster-based nano-electronics

TitleTowards polyoxometalate-cluster-based nano-electronics
Authors
Keywordspolyoxometalates
nanoelectronics
nanosystems
redox-active systems
Issue Date2013
Citation
Chemistry - A European Journal, 2013, v. 19, n. 49, p. 16502-16511 How to Cite?
AbstractWe explore the concept that the incorporation of polyoxometalates (POMs) into complementary metal oxide semiconductor (CMOS) technologies could offer a fundamentally better way to design and engineer new types of data storage devices, due to the enhanced electronic complementarity with SiO2, high redox potentials, and multiple redox states accessible to polyoxometalate clusters. To explore this we constructed a custom-built simulation domain bridge. Connecting DFT, for the quantum mechanical modelling part, and mesoscopic device modelling, confirms the theoretical basis for the proposed advantages of POMs in non-volatile molecular memories (NVMM) or flash-RAM. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Persistent Identifierhttp://hdl.handle.net/10722/221352
ISSN
2015 Impact Factor: 5.771
2015 SCImago Journal Rankings: 2.323
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorVilà-Nadal, Laia-
dc.contributor.authorMitchell, Scott G.-
dc.contributor.authorMarkov, Stanislav-
dc.contributor.authorBusche, Christoph-
dc.contributor.authorGeorgiev, Vihar-
dc.contributor.authorAsenov, Asen-
dc.contributor.authorCronin, Leroy-
dc.date.accessioned2015-11-18T06:09:05Z-
dc.date.available2015-11-18T06:09:05Z-
dc.date.issued2013-
dc.identifier.citationChemistry - A European Journal, 2013, v. 19, n. 49, p. 16502-16511-
dc.identifier.issn0947-6539-
dc.identifier.urihttp://hdl.handle.net/10722/221352-
dc.description.abstractWe explore the concept that the incorporation of polyoxometalates (POMs) into complementary metal oxide semiconductor (CMOS) technologies could offer a fundamentally better way to design and engineer new types of data storage devices, due to the enhanced electronic complementarity with SiO2, high redox potentials, and multiple redox states accessible to polyoxometalate clusters. To explore this we constructed a custom-built simulation domain bridge. Connecting DFT, for the quantum mechanical modelling part, and mesoscopic device modelling, confirms the theoretical basis for the proposed advantages of POMs in non-volatile molecular memories (NVMM) or flash-RAM. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.-
dc.languageeng-
dc.relation.ispartofChemistry - A European Journal-
dc.subjectpolyoxometalates-
dc.subjectnanoelectronics-
dc.subjectnanosystems-
dc.subjectredox-active systems-
dc.titleTowards polyoxometalate-cluster-based nano-electronics-
dc.typeArticle-
dc.description.natureLink_to_subscribed_fulltext-
dc.identifier.doi10.1002/chem.201301631-
dc.identifier.pmid24281797-
dc.identifier.scopuseid_2-s2.0-84889682509-
dc.identifier.hkuros235075-
dc.identifier.volume19-
dc.identifier.issue49-
dc.identifier.spage16502-
dc.identifier.epage16511-
dc.identifier.eissn1521-3765-
dc.identifier.isiWOS:000327404700002-

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