Browsing by Author rp00197

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TitleAuthor(s)Issue Date
 
Determination of optimal insulator thickness for MISiC hydrogen sensors
Proceeding/Conference:Solid-State Electronics
Xu, JPLai, PTHan, BTang, WM
2004
 
Dynamic-stress-induced enhanced degradation of 1/f noise in n-MOSFET's
Journal:IEEE Transactions on Electron Devices
Xu, JPLai, PTCheng, YC
2000
 
Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO2 gate stack
Journal:Chinese Physics
Zhang, XFXu, JPLai, PTLi, CXGuan, JG
2007
 
Effect of SiO2/SiC interface on inversion channel electron mobility of 4H-SiC n-MOSFET
Journal:Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Xu, JWu, HLai, PTHan, B
2004
 
Effects of annealing gas species on the electrical properties and reliability of Ge MOS capacitors with high-k Y 2O 3 gate dielectric
Proceeding/Conference:2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Li, CXXu, HXXu, JPLai, PT
2009
 
The effects of duty cycle and voltage swing of gate pulse on the AC-stress-induced degradation of nMOSFETs with N2O gate oxides
Journal:Microelectronics Reliability
Zeng, XLai, PTXu, JP
1998
 
Effects of fluorine incorporation on the properties of Ge p-MOS capacitors with HfTiON dielectric
Journal:Solid-State Electronics
Li, CXLeung, CHLai, PTXu, JP
2010
 
Effects of Gate-Pulse Shape on the Accuracy of Charge-Pumping Measurement
Proceeding/Conference:International Conference on VLSI and CAD Proceedings
Lai, PTXu, JPPoek, CKCheng, YC
1997
 
Effects of post deposited Annealing on Ge MOS capacitors with sub-nanometer EOT HfTiO gate dielectric
Proceeding/Conference:IEEE International Conference of Nano/Micro Engineered and Molecular Systems (NEMS) Proceedings
Zou, XXu, JLai, PTLi, C
2008
 
Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric
Journal:Microelectronics Reliability
Li, CXZou, XLai, PTXu, JPChan, CL
2008
 
Effects of wet N 2O oxidation on interface properties of 6H-SiC MOS capacitors
Journal:IEEE Electron Device Letters
Lai, PTXu, JPChan, CL
2002
 
Electrical Characteristics of Ge MOS Capacitor with HfTiON as Gate Dielectric
Proceeding/Conference:Proceedings of RIUPEEEC
Zou, XLi, CXu, JPLai, PTChen, WB
2006
 
Electrical characteristics of MOS capacitor with HfTiON gate dielectric and HfTiSiON interlayer
Journal:Chinese Physics
Chen, WBXu, JPLai, PTLi, YPXu, SGChan, CL
2006
 
Electrical properties and reliability of HfO 2 gate-dielectric MOS capacitors with trichloroethylene surface pretreatment
Journal:Chinese Physics
Xu, JPChen, WBLai, PTLi, YPChan, CL
2007
 
Electrical properties of Ge metal-oxide-semiconductor capacitors with La 2O 3 gate dielectric annealed in different ambient
Journal:Thin Solid Films
Xu, HXXu, JPLi, CXLai, PT
2010
 
Electrical properties of HfTiON gate-dielectric GaAs metal-oxide-semiconductor capacitor with A1ON as interlayer
Journal:IEEE Trans. Electron Devices
Wang, LLiu, LXu, JZhu, S.Y.Huang, Y.Lai, PT
2014
 
Electrical properties of HfTiON gate-dielectric metal-oxide-semiconductor capacitors with different Si-surface nitridations
Journal:Applied Physics Letters
Ji, FXu, JPLai, PTLi, CXGuan, JG
2007
 
Energy levels of interface states generated in n-MOSFETs by hot-carrier stresses
Journal:Solid-State Electronics
Xu, JPLai, PTCheng, YC
2000
 
Enhanced performance of Si MOS capacitors with HfTaOxNy gate dielectric by using AlOxNy or TaOxNy interlayer
Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits Proceedings
Li, CXZhang, XFXu, JPLai, PT
2008
 
Enhanced reliability for low-temperature gate dielectric of MOS devices by N2O or NO plasma nitridation
Journal:Microelectronics Reliability
Or, DCTLai, PTSin, JKOKwok, PCKXu, JP
2003
Showing results 14 to 33 of 109 < previous   next >