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Conference Paper: Enhanced performance of Si MOS capacitors with HfTaOxNy gate dielectric by using AlOxNy or TaOxNy interlayer

TitleEnhanced performance of Si MOS capacitors with HfTaOxNy gate dielectric by using AlOxNy or TaOxNy interlayer
Authors
Issue Date2008
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853
Citation
The 2008 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, China, 8-10 December 2008. In Conference Proceedings, 2008, p. 1-4 How to Cite?
AbstractSi MOS capacitors with HfTa oxide and oxynitride as gate dielectric were fabricated. Moreover, AlOxNy or TaOxN y was used as the interlayer between HfTa oxynitride and Si substrate to improve the electrical quality of the capacitors. Experimental results showed that the HfTaOxNy capacitor with TaO xNy interlayer achieved better performance with larger capacitance and smaller leakage current than its counterpart with AlO xNy interlayer. © 2008 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/62041
ISBN
References

 

DC FieldValueLanguage
dc.contributor.authorLi, CXen_HK
dc.contributor.authorZhang, XFen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLai, PTen_HK
dc.date.accessioned2010-07-13T03:52:41Z-
dc.date.available2010-07-13T03:52:41Z-
dc.date.issued2008en_HK
dc.identifier.citationThe 2008 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, China, 8-10 December 2008. In Conference Proceedings, 2008, p. 1-4en_HK
dc.identifier.isbn978-1-4244-2540-2-
dc.identifier.urihttp://hdl.handle.net/10722/62041-
dc.description.abstractSi MOS capacitors with HfTa oxide and oxynitride as gate dielectric were fabricated. Moreover, AlOxNy or TaOxN y was used as the interlayer between HfTa oxynitride and Si substrate to improve the electrical quality of the capacitors. Experimental results showed that the HfTaOxNy capacitor with TaO xNy interlayer achieved better performance with larger capacitance and smaller leakage current than its counterpart with AlO xNy interlayer. © 2008 IEEE.en_HK
dc.languageengen_HK
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853-
dc.relation.ispartofIEEE Conference on Electron Devices and Solid-State Circuits Proceedingsen_HK
dc.rightsIEEE Conference on Electron Devices and Solid-State Circuits Proceedings. Copyright © IEEE.-
dc.rights©2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleEnhanced performance of Si MOS capacitors with HfTaOxNy gate dielectric by using AlOxNy or TaOxNy interlayeren_HK
dc.typeConference_Paperen_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/EDSSC.2008.4760738en_HK
dc.identifier.scopuseid_2-s2.0-63249090854en_HK
dc.identifier.hkuros164263en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-63249090854&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage1-
dc.identifier.epage4-
dc.publisher.placeUnited States-
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridZhang, XF=14627948200en_HK
dc.identifier.scopusauthoridLi, CX=22034888200en_HK
dc.customcontrol.immutablesml 140527-

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