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Article: Enhanced reliability for low-temperature gate dielectric of MOS devices by N2O or NO plasma nitridation

TitleEnhanced reliability for low-temperature gate dielectric of MOS devices by N2O or NO plasma nitridation
Authors
Issue Date2003
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel
Citation
Microelectronics Reliability, 2003, v. 43 n. 1, p. 163-166 How to Cite?
AbstractSilicon MOS capacitors fabricated solely by low-temperature processes (under 600 °C) are treated with nitridation using N2O or NO plasma. Their properties are investigated at room temperature under high-field stress. It is found that both kinds of plasmas are effective in improving the gate-oxide hardness against stress-induced damage, which is characterized by a smaller shift in flatband voltage and smaller increase in interface states after the stress. Moreover, NO-nitrided device shows better performance than N2O-nitrided one. These results show that plasma nitridation has positive effects on the reliability of low-temperature-fabricated devices, which play an important role in flat-panel display systems on glass. © 2002 Elsevier Science Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/155180
ISSN
2015 Impact Factor: 1.202
2015 SCImago Journal Rankings: 0.675
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorOr, DCTen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorSin, JKOen_HK
dc.contributor.authorKwok, PCKen_HK
dc.contributor.authorXu, JPen_HK
dc.date.accessioned2012-08-08T08:32:12Z-
dc.date.available2012-08-08T08:32:12Z-
dc.date.issued2003en_HK
dc.identifier.citationMicroelectronics Reliability, 2003, v. 43 n. 1, p. 163-166en_HK
dc.identifier.issn0026-2714en_HK
dc.identifier.urihttp://hdl.handle.net/10722/155180-
dc.description.abstractSilicon MOS capacitors fabricated solely by low-temperature processes (under 600 °C) are treated with nitridation using N2O or NO plasma. Their properties are investigated at room temperature under high-field stress. It is found that both kinds of plasmas are effective in improving the gate-oxide hardness against stress-induced damage, which is characterized by a smaller shift in flatband voltage and smaller increase in interface states after the stress. Moreover, NO-nitrided device shows better performance than N2O-nitrided one. These results show that plasma nitridation has positive effects on the reliability of low-temperature-fabricated devices, which play an important role in flat-panel display systems on glass. © 2002 Elsevier Science Ltd. All rights reserved.en_HK
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrelen_HK
dc.relation.ispartofMicroelectronics Reliabilityen_HK
dc.titleEnhanced reliability for low-temperature gate dielectric of MOS devices by N2O or NO plasma nitridationen_HK
dc.typeArticleen_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/S0026-2714(02)00284-6en_HK
dc.identifier.scopuseid_2-s2.0-0037224357en_HK
dc.identifier.hkuros81758-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0037224357&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume43en_HK
dc.identifier.issue1en_HK
dc.identifier.spage163en_HK
dc.identifier.epage166en_HK
dc.identifier.isiWOS:000181461500017-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridOr, DCT=7006099149en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridSin, JKO=7103312667en_HK
dc.identifier.scopusauthoridKwok, PCK=7101871278en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK

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