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Article: Effects of fluorine incorporation on the properties of Ge p-MOS capacitors with HfTiON dielectric

TitleEffects of fluorine incorporation on the properties of Ge p-MOS capacitors with HfTiON dielectric
Authors
KeywordsFluorine passivation
Ge
High-k dielectric
MOS
Issue Date2010
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid-State Electronics, 2010, v. 54 n. 7, p. 675-679 How to Cite?
AbstractIn this work, Ge p-MOS capacitors with HfTiON gate dielectric were fabricated by sputtering method. Pre-deposition fluorine plasma treatment and post-deposition fluorine plasma annealing were used to improve the electrical and reliability properties of Ge p-MOS capacitors. Experimental results showed that both methods could improve the interface quality with lower interface-state density, less frequency dispersion, and also enhance the reliability properties with smaller increases of oxide charge and gate leakage after high-field stressing. Compared with pre-deposition fluorine-plasma treatment, post-deposition fluorine plasma annealing achieved higher quality of high-k/Ge interface such as lower interface-state density, higher dielectric constant and lower stress-induced gate leakage current. By XPS and AFM analyses, the improvements should be due to the passivation effects of fluorine on oxygen vacancies, dangling bonds and the dielectric surface. © 2010 Elsevier Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/155579
ISSN
2015 Impact Factor: 1.345
2015 SCImago Journal Rankings: 0.675
ISI Accession Number ID
Funding AgencyGrant Number
RGC of HKSAR, ChinaHKU 713308E
University of Hong Kong00600009
National Natural Science Foundation of China60776016
Funding Information:

The work is financially supported by the RGC of HKSAR, China (Project No. HKU 713308E), the University Development Fund (Nanotechnology Research Institute, 00600009) of the University of Hong Kong, and the National Natural Science Foundation of China (Grant No. 60776016).

References
Grants

 

DC FieldValueLanguage
dc.contributor.authorLi, CXen_HK
dc.contributor.authorLeung, CHen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorXu, JPen_HK
dc.date.accessioned2012-08-08T08:34:11Z-
dc.date.available2012-08-08T08:34:11Z-
dc.date.issued2010en_HK
dc.identifier.citationSolid-State Electronics, 2010, v. 54 n. 7, p. 675-679en_HK
dc.identifier.issn0038-1101en_HK
dc.identifier.urihttp://hdl.handle.net/10722/155579-
dc.description.abstractIn this work, Ge p-MOS capacitors with HfTiON gate dielectric were fabricated by sputtering method. Pre-deposition fluorine plasma treatment and post-deposition fluorine plasma annealing were used to improve the electrical and reliability properties of Ge p-MOS capacitors. Experimental results showed that both methods could improve the interface quality with lower interface-state density, less frequency dispersion, and also enhance the reliability properties with smaller increases of oxide charge and gate leakage after high-field stressing. Compared with pre-deposition fluorine-plasma treatment, post-deposition fluorine plasma annealing achieved higher quality of high-k/Ge interface such as lower interface-state density, higher dielectric constant and lower stress-induced gate leakage current. By XPS and AFM analyses, the improvements should be due to the passivation effects of fluorine on oxygen vacancies, dangling bonds and the dielectric surface. © 2010 Elsevier Ltd. All rights reserved.en_HK
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_HK
dc.relation.ispartofSolid-State Electronicsen_HK
dc.subjectFluorine passivationen_HK
dc.subjectGeen_HK
dc.subjectHigh-k dielectricen_HK
dc.subjectMOSen_HK
dc.titleEffects of fluorine incorporation on the properties of Ge p-MOS capacitors with HfTiON dielectricen_HK
dc.typeArticleen_HK
dc.identifier.emailLeung, CH: chleung@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.authorityLeung, CH=rp00146en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.sse.2010.03.002en_HK
dc.identifier.scopuseid_2-s2.0-77955312906en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77955312906&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume54en_HK
dc.identifier.issue7en_HK
dc.identifier.spage675en_HK
dc.identifier.epage679en_HK
dc.identifier.isiWOS:000278207400001-
dc.publisher.placeUnited Kingdomen_HK
dc.relation.projectHigh-k Gate Dielectrics for High-Performance Germanium MISFET's-
dc.identifier.scopusauthoridLi, CX=22034888200en_HK
dc.identifier.scopusauthoridLeung, CH=7402612415en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.citeulike6964508-

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