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Article: Effect of SiO2/SiC interface on inversion channel electron mobility of 4H-SiC n-MOSFET

TitleEffect of SiO2/SiC interface on inversion channel electron mobility of 4H-SiC n-MOSFET
Authors
KeywordsMobility
n-MOSFET
SiC
SiO2/SiC interface
Issue Date2004
Citation
Pan Tao Ti Hsueh Pao/Chinese Journal Of Semiconductors, 2004, v. 25 n. 2, p. 200-205 How to Cite?
AbstractA model for inversion channel electron mobility of 4H-SiC n-MOSFET is proposed based on device physics of semiconductor. The effect of interface states, lattice, ionized impurities, and surface roughness scatterings on the mobility is considered in this model, where the interface-state scattering mechanism includes electrically-shielded effect of carriers. The influence of some factors, such as interface states, surface roughness, on the mobility is investigated using the model. The simulated results indicate that the interface states and the surface roughness are major influence on inversion channel electrons mobility, in which the maximum mobility depends on the interface-state density, and surface-roughness scattering limits the electron mobility under high field. The model can be well used for device simulation.
Persistent Identifierhttp://hdl.handle.net/10722/155307
ISSN
2011 SCImago Journal Rankings: 0.140
References

 

DC FieldValueLanguage
dc.contributor.authorXu, Jen_HK
dc.contributor.authorWu, Hen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorHan, Ben_HK
dc.date.accessioned2012-08-08T08:32:48Z-
dc.date.available2012-08-08T08:32:48Z-
dc.date.issued2004en_HK
dc.identifier.citationPan Tao Ti Hsueh Pao/Chinese Journal Of Semiconductors, 2004, v. 25 n. 2, p. 200-205en_HK
dc.identifier.issn0253-4177en_HK
dc.identifier.urihttp://hdl.handle.net/10722/155307-
dc.description.abstractA model for inversion channel electron mobility of 4H-SiC n-MOSFET is proposed based on device physics of semiconductor. The effect of interface states, lattice, ionized impurities, and surface roughness scatterings on the mobility is considered in this model, where the interface-state scattering mechanism includes electrically-shielded effect of carriers. The influence of some factors, such as interface states, surface roughness, on the mobility is investigated using the model. The simulated results indicate that the interface states and the surface roughness are major influence on inversion channel electrons mobility, in which the maximum mobility depends on the interface-state density, and surface-roughness scattering limits the electron mobility under high field. The model can be well used for device simulation.en_HK
dc.languageengen_US
dc.relation.ispartofPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductorsen_HK
dc.subjectMobilityen_HK
dc.subjectn-MOSFETen_HK
dc.subjectSiCen_HK
dc.subjectSiO2/SiC interfaceen_HK
dc.titleEffect of SiO2/SiC interface on inversion channel electron mobility of 4H-SiC n-MOSFETen_HK
dc.typeArticleen_HK
dc.identifier.emailXu, J: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, J=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-2942670259en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-2942670259&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume25en_HK
dc.identifier.issue2en_HK
dc.identifier.spage200en_HK
dc.identifier.epage205en_HK
dc.publisher.placeChinaen_HK
dc.identifier.scopusauthoridXu, J=7407004696en_HK
dc.identifier.scopusauthoridWu, H=8912385200en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridHan, B=7401726428en_HK

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